| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2024-02-29 11:00 |
Yamagata | Yamagata University (Primary: On-site, Secondary: Online) |
Hydrogen partial pressure evaluation using zinc oxide thin film transistor Kaito Otsuka, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.)  CPM2023-100 |
Hydrogen is expected to be an environmentally friendly clean energy source, but since it is fllammable and explosive, th... [more] | CPM2023-100 pp.15-18 |
| CPM | 2024-02-29 11:15 |
Yamagata | Yamagata University (Primary: On-site, Secondary: Online) |
Detection of alcohol molecules using ZnO thin film transistor Ryunosuke Noguchi, Masanori Miura, Bashir Ahmmad, Fumihiko Hirise (Yamagata Univ.) CPM2023-101 |
In recent years, much research has focused on the development of gas sensors for detecting VOCs with room temperature op... [more] | CPM2023-101 pp.19-22 |
| OME | 2024-01-16 14:50 |
Online | Online | Control of the Resistive Switching Behavior of Metal Oxide-based Resistive Memories by Using Self-Assembled Monolayers Masahiro Nakano (Kanazawa Univ.), Hiroki Matsui, Md. Shahiduzzaman, Tetsuya Taima, Makoto Karakawa (anazawa Univ.) OME2023-80 |
We explored how self-assembled monolayers (SAMs) affect the resistive changing behavior in metal oxides-based resistive ... [more] | OME2023-80 pp.13-17 |
| ED | 2023-12-08 09:50 |
Aichi | WINC AICHI | Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST) ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] | ED2023-48 pp.39-42 |
| SDM | 2023-10-13 13:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Defect Reduction in UV Nanoimprint Lithography Toshiki ITO (Canon) SDM2023-54 |
Field-by-field type UV nanoimprint lithography equipped with on-demand inkjet dispense system has been developed, which ... [more] | SDM2023-54 pp.1-6 |
| SDM | 2023-10-13 16:20 |
Miyagi | Niche, Tohoku Univ. | Formation and basic evaluation of gallium oxide thin film on sapphire substrate Fuminobu Imaizumi, Takumi Morita (NIT, Oyama college) SDM2023-59 |
Recently, the development of wide bandgap semiconductor materials has become increasingly important. In particular, ther... [more] | SDM2023-59 pp.34-39 |
| SDM | 2023-06-26 11:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.) SDM2023-29 |
We have successfully evaluated ultrathin SiO2/4H-SiC(0001) interface property by stacking self-assembled monolayer (SAM)... [more] | SDM2023-29 pp.7-10 |
| CPM, ED, SDM | 2023-05-19 13:00 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
[Invited Talk]
Repeated bending endurance test of zinc oxide thin films deposited at room temperature on flexible substrates Toshihiko Maemoto, Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Shigehiko Sasa, Ahikiko Fujii (Osaka Inst. of Tech.) ED2023-1 CPM2023-1 SDM2023-18 |
We investigated the device structure of oxide thin-film devices that can operate even when bending, the evaluation of th... [more] | ED2023-1 CPM2023-1 SDM2023-18 pp.1-6 |
| SDM, OME | 2023-04-21 14:15 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of Organic Photovoltaic Cells Using Magnesium Oxide Formed by a Reaction of Molybdenum Oxide with Magnesium as a Cathode Interlayer Material Hiroshi Kageyama (Univ. Ryukyus) SDM2023-2 OME2023-2 |
Control of the interface between organic layer / electrode in organic photovoltaic cells (OPVs) is of crucial importance... [more] | SDM2023-2 OME2023-2 pp.5-8 |
| CPM, ED, LQE | 2022-11-24 11:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Semiconducting properties of electrochemically deposited Ni(OH)2 thin films Masahide Shimura, Koji Abe (Nitech) ED2022-28 CPM2022-53 LQE2022-61 |
Abstract Metal hydroxides are important inorganic materials used as flame retardants and precursors for metal oxide syn... [more] | ED2022-28 CPM2022-53 LQE2022-61 pp.23-26 |
| CPM, ED, LQE | 2022-11-24 13:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Al-doped ZnO thin films deposited by sol-gel method Koji Abe, Tasuku Kubota (NITech) ED2022-30 CPM2022-55 LQE2022-63 |
Sol-gel process is used to deposit oxide semiconductor thin films such as zinc oxide (ZnO). However, resistivity of ZnO ... [more] | ED2022-30 CPM2022-55 LQE2022-63 pp.33-36 |
| CPM | 2022-03-01 13:30 |
Online | Online | Water vapor gas diffusion barrier by using room temperature ALD Kazuki Yoshida, Kentaro Saito, Masanori Miura, Kensaku Kanomata, Fumihiko Hirose (Yamagata Univ.) CPM2021-73 |
In this paper, we will report water vapor gas barrier films prepared by room temperature atomic layer deposition(RT-ALD)... [more] | CPM2021-73 pp.7-10 |
| ED | 2021-12-09 14:45 |
Online | Online | Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] | ED2021-45 pp.38-42 |
| SDM | 2021-10-21 10:45 |
Online | Online | [Invited Talk]
Influence of Fluorine on Reliabilities of SiO2 and SixNy Films Yuichiro Mitani (Tokyo City Univ.) SDM2021-44 |
In this paper, the influence of Fluorine incorporation into SiO2 and Si nitride (SixNy) films which are widely used in t... [more] | SDM2021-44 pp.1-4 |
| SDM | 2021-10-21 13:25 |
Online | Online | A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47 |
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] | SDM2021-47 pp.12-15 |
| OME, IEE-DEI | 2021-03-01 14:35 |
Online | Online | Fabrication of inverted perovskite solar cells with self-assembled hole buffer layers Takao Ueda, Koki Sato, Eiji Itoh (Shinshu Univ.), Ono Hironobu, Goda Shunn (Nipponshokubai) OME2020-21 |
In this study, we have fabricated inverted perovskite solar cells (IPSCs) consisting of ITO/ultra-thin hole buffer layer... [more] | OME2020-21 pp.8-13 |
| OME | 2020-12-25 13:00 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Fabrication of resistive gas sensor using reduced graphene oxide (rGO) thin films based different reduction methods and their gas sensing property. Kosuke Takano, Eiji Itoh (Shinsyu Univ.), Hironobu Ono, Shun Goda (Nippon Shokubai) OME2020-8 |
In this study, we have investigated the sheet resistance Rs and the chemi-resistive gas sensing properties of the ultra-... [more] | OME2020-8 pp.1-6 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 10:30 |
Online | Online | Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) EID2020-3 SDM2020-37 |
Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device ca... [more] | EID2020-3 SDM2020-37 pp.9-12 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:25 |
Online | Online | Stacked cross-point memory of synaptic elements using IGZO thin film Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU) EID2020-4 SDM2020-38 |
We conducted research and development of a large hardware neural network by using oxide semiconductors of In-Ga-Zn-O (IG... [more] | EID2020-4 SDM2020-38 pp.13-16 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 16:30 |
Online | Online | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48 |
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] | EID2020-14 SDM2020-48 pp.54-57 |
[Return to Top Page]