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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 116  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME 2024-01-16
14:50
Online Online Control of the Resistive Switching Behavior of Metal Oxide-based Resistive Memories by Using Self-Assembled Monolayers
Masahiro Nakano (Kanazawa Univ.), Hiroki Matsui, Md. Shahiduzzaman, Tetsuya Taima, Makoto Karakawa (anazawa Univ.) OME2023-80
We explored how self-assembled monolayers (SAMs) affect the resistive changing behavior in metal oxides-based resistive ... [more] OME2023-80
pp.13-17
CPM, ED, SDM 2023-05-19
15:40
Aichi Nagoya Institute of Technology
(Primary: On-site, Secondary: Online)
Fabrication and evaluation of transfer-free graphene FETs on sapphire substrates using agglomeration phenomenon of Ni patterns with ultra-fine structure
Ichiro Kato, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2023-5 CPM2023-5 SDM2023-22
Using graphene as a FET requires transferring it to an insulating substrate, and defects may be introduced in the graphe... [more] ED2023-5 CPM2023-5 SDM2023-22
pp.20-23
EMT, IEE-EMT 2023-05-19
15:55
Kanagawa Information Technology R & D Center, MITSUBISHI Electric Corp. A Characteristic Analysis of an Optical Fiber Polarizer
Taiki Arakawa, Yuya Otsuka, Yuki Shiroishi (Nihon Univ.), Kazunori Kameda (Sano Nihon Col.), Shinichi Furukawa (Nihon Univ.) EMT2023-7
In this study, we propose two types of fiber type polarizers with circular metal regions or circular pit regions on the ... [more] EMT2023-7
pp.33-38
SDM, OME 2023-04-22
15:00
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
[Invited Talk] Metal induced lateral crystallization of amorphous Ge on insulating substrate
Isao Tsunoda, Kenichiro Takakura (NIT, Kumamoto College) SDM2023-15 OME2023-15
We have investigated the low-temperature metal induced lateral crystallization of amorphous Ge on insulating substrate. ... [more] SDM2023-15 OME2023-15
pp.55-58
US 2023-01-25
13:30
Online Online Difference in welding strength caused by surface roughness of samples using ultrasonic complex vibration
Rina Yamazaki, Takuya Asami, Hikaru Miura (Nihon Univ.) US2022-71
Tensile shear strength was measured and investigated in connection experiments with different welding times when the sur... [more] US2022-71
pp.1-6
EMCJ, MW, EST, IEE-EMC [detail] 2022-10-14
10:50
Akita Akita University
(Primary: On-site, Secondary: Online)
A Study on Planar Metallic Photonic Crystal Resonators
Jiaxing FAN, Chunping Chen, Liangchao JIang, Ming Wang, Takaharu Hiraoka, Tetsuo Anada (Kanagawa Univ) EMCJ2022-55 MW2022-101 EST2022-65
In recent years, the application of planar metallic photonic crystal (MPhC) structures have been attracting a lot of att... [more] EMCJ2022-55 MW2022-101 EST2022-65
pp.102-107
OME, SDM 2022-04-23
10:20
Miyazaki Takachiho Hall
(Primary: On-site, Secondary: Online)
EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge/SiO2
Atsuki Morimoto, Rikuto Abe, Anna Hirai, Towa Hirai, Kenichiro Takakura, Isao Tsunoda (NIT(KOSEN),Kumamoto College) SDM2022-10 OME2022-10
We have investigated low temperature solid phase crystallization of amorphous Ge on insulating substrate. High temperatu... [more] SDM2022-10 OME2022-10
pp.47-50
OFT, OCS, LSJ
(Joint) [detail]
2021-08-26
15:35
Online Online Study of Downsized and light weight Optical fiber cord for Fly by Light
Takeshiro Nagai, Kengo Tanabe, Yukihiro Kamogari, Wataru Noro (SWCC) OFT2021-16
As flight control technology progresses, an optical data bus system that is resistant to electromagnetic interference an... [more] OFT2021-16
pp.25-28
MRIS, ITE-MMS 2020-10-05
14:45
Online Online Evaluation of perpendicular magnetic anisotropy in Co2FeSi/MgO bilayers
Eisuke Matsushita, Yota Takamura, Yoshiya Stutler, Shigeki Nakagawa (Tokyo Tech) MRIS2020-4
We investigated the origin of perpendicular magnetic anisotropy in full-Heusler alloy Co_2FeSi(CFS)/MgO bilayers in whic... [more] MRIS2020-4
pp.16-19
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-24
10:05
Tottori Tottori Univ. [Poster Presentation] Effect of transition metal addition on luminescent properties of YAG:Cephosphor
Michio Arimura, Tomohiro Kwashima, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.)
YAG: Ce phosphor widely accepted as a phosphor for white LEDs was prepared by co-doped a transition metal, and the emiss... [more]
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-14
09:40
Ehime Ehime Prefecture Gender Equality Center Device characteristic measurement for realizing CMOS-compatible non-volatile memory using FiCC
Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2019-36 DC2019-60
This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can... [more] VLD2019-36 DC2019-60
pp.63-68
SDM 2019-10-23
15:40
Miyagi Niche, Tohoku Univ. Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application
Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigat... [more] SDM2019-56
pp.17-20
CPM 2019-08-26
15:25
Hokkaido Kitami Institute of Technology Preparation and semiconductor properties of anthracene doped ZIF-8
Hatsunori Kashima, Shota Shimizu, Naoki Okamoto, Takeyasu Saito (Osaka Pref Univ.) CPM2019-41
Metal Organic Framework (MOF) has recently attracted much attention in electronics due to its following characteristic: ... [more] CPM2019-41
pp.19-22
AP 2019-08-23
10:20
Hokkaido Hokkai-Gakuen Univ. A Fundamental Study of Impedance Variable Folded Monopole Antenna Using Switching Element
Yuta Nakagawa, Oai Nguyen Cong, Naobumi Michishita, Hisashi Morishita (National Defense Academy) AP2019-65
In order to achieve an antenna with robustness to metal for closed space wireless communications, the impedance characte... [more] AP2019-65
pp.97-100
ITE-IDY, EID, SID-JC [detail] 2019-08-02
15:05
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Characterization of Metal Thin Film-Wiring Materials for Foldable Displays
Chiharu Kura, Yumi Teramae, Yuki Tauchi (KOBELCO), Hiroshi Goto, Hiroyuki Okuno (Kobelco Research Institute)
Recently, flexible displays are receiving a lot of attention, and the demands of flexible displays are expected to incre... [more]
AP
(2nd)

Overseas Hotel Istana, Kuala Lumpur Power transmission efficiency of magnetic material loaded solenoid in the vicinity of circuit ground
Yoshihiro Nakamura, Cho Keizo, Hiroaki Nakabayashi (Chiba Institute of Tech)
Small solenoid whose diameter is about 1mm has been proposed for the NFC antenna. When the NFC antenna is installed to t... [more]
SDM 2019-06-21
15:45
Aichi Nagoya Univ. VBL3F New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching
Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST) SDM2019-32
The characteristics of the VO2-channel Mott transistor is systematically studied. The transfer characteristics shows a c... [more] SDM2019-32
pp.35-38
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] 2019-01-18
10:30
Osaka Osaka University Nakanoshima Center Polarization Converter in a Buried Waveguide with a Metal Strip
Yota Sasaki, Junji Yamauchi, Hisamatsu Nakano (Hosei Univ.) PN2018-68 EMT2018-102 OPE2018-177 LQE2018-187 EST2018-115 MWP2018-86
A polarization converter with a metal strip is developed in a buried waveguide with a rectangular core. The eigenmode an... [more] PN2018-68 EMT2018-102 OPE2018-177 LQE2018-187 EST2018-115 MWP2018-86
pp.203-208
EID, SDM, ITE-IDY [detail] 2018-12-25
11:00
Kyoto   Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate
Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.) EID2018-4 SDM2018-77
Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal ... [more] EID2018-4 SDM2018-77
pp.1-4
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2018-12-07
09:00
Hiroshima Satellite Campus Hiroshima Design and fabrication of characteristics measurement circuit for CMOS-compatible ultra-low-power non-volatile memory element using FiCC
Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2018-65 DC2018-51
This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can... [more] VLD2018-65 DC2018-51
pp.183-188
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