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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2024-05-24 15:50 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Improvement of Sensitivity for Power Cycle Degradation by A New Device Structure Koki Okame, Yuki Yamakita, Shin-ichi Nishizawa, Wataru Saito (Kyushu Univ)  ED2024-9 CPM2024-9 SDM2024-16 |
This paper reports a demonstration of a new sensor device structure designed to increase the current change for detectin... [more] | ED2024-9 CPM2024-9 SDM2024-16 pp.29-32 |
| ED | 2023-12-08 10:50 |
Aichi | WINC AICHI | Estimation of brightness and Richardson constant of a Schottky emission electron source using experimental data and numerical simulation Futo Okada, Mitsuki Ozawa, Hidekazu Murata, Takayuki Tanaka, Eiji Rokuta (Meijo Univ.) ED2023-50 |
The average brightness is an important indicator of electron source performance but is usually difficult to measure in s... [more] | ED2023-50 pp.45-48 |
| LQE, ED, CPM | 2023-11-30 14:55 |
Shizuoka | Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.) ED2023-18 CPM2023-60 LQE2023-58 |
We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics... [more] | ED2023-18 CPM2023-60 LQE2023-58 pp.21-24 |
|
| CPM | 2023-08-01 10:40 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Review of Characterization of Metal/GaN Schottky Contacts Kenji Shiojima (Univ. of Fukui) CPM2023-21 |
This paper reviews innovation of metal/GaN contacts from the aspects of crystal quality, process technique, and basic un... [more] | CPM2023-21 pp.36-39 |
| ED | 2022-12-09 12:05 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Electron emission characteristics of LaB6 thermal and Schottky emission at lower than normal heating temperatures Chotaro Kajita, Futo Okada, Takayuki Tanaka, Hidekazu Murata, Eiji Rokuta (Meijou Univ.) ED2022-64 |
We have been developing a novel LaB6 electron gun operates under Schottky emission mode and satisfies the conditions suc... [more] | ED2022-64 pp.44-46 |
| ED, CPM, LQE | 2021-11-26 13:00 |
Online | Online | Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.) ED2021-28 CPM2021-62 LQE2021-40 |
We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three diff... [more] | ED2021-28 CPM2021-62 LQE2021-40 pp.63-66 |
| ED, CPM, LQE | 2021-11-26 13:25 |
Online | Online | Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41 |
Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning inter... [more] | ED2021-29 CPM2021-63 LQE2021-41 pp.67-70 |
| LQE, CPM, ED | 2020-11-26 14:40 |
Online | Online | Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink Yuto Kawasumi, Yuto Yasui (Univ. of Fukui), Yukiyasu Kashiwagi, Toshiyuki Tamai (ORIST), Kenji Shiojima (Univ. of Fukui) ED2020-10 CPM2020-31 LQE2020-61 |
Two-dimensional characterization of n-GaN Schottky contacts formed by printing method using Ni nanoink was performed by ... [more] | ED2020-10 CPM2020-31 LQE2020-61 pp.37-40 |
| LQE, CPM, ED | 2020-11-26 15:50 |
Online | Online | GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64 |
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] | ED2020-13 CPM2020-34 LQE2020-64 pp.49-52 |
| LQE, CPM, ED | 2020-11-27 11:20 |
Online | Online | Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67 |
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] | ED2020-16 CPM2020-37 LQE2020-67 pp.60-62 |
| CPM | 2019-11-08 10:50 |
Fukui | Fukui univ. | [Invited Talk]
Mapping of metal/semiconductor and semiconductor/semiconductor interfaces using scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui) CPM2019-51 |
Scanning internal photoemission spectroscopy has been developed to map the electrical characteristics of metal/semicondu... [more] | CPM2019-51 pp.35-38 |
| ED, LQE, CPM | 2018-11-29 14:40 |
Aichi | Nagoya Inst. tech. | Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage Kenji Shiojima, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2018-36 CPM2018-70 LQE2018-90 |
We applied scanning internal photoemission microscopy (SIPM) method to characterize the initial stage of the degradation... [more] | ED2018-36 CPM2018-70 LQE2018-90 pp.17-20 |
| WPT (2nd) |
2018-11-02 - 2018-11-04 |
Miyagi | Tohoku University | The Fundamental Experiment of Microwave Wireless Power Transmission to UAV Yudai Hashimoto (NTT Communications Corp.), Qiaowei Yuan, Takumi Aoki (NIT, Sendai College) |
The research on wireless power transmission using microwaves in recent years has been advanced greatly. In this paper, f... [more] | |
| WPT (2nd) |
2017-12-09 - 2017-12-11 |
Overseas | National University of Singapore(AWPT2017) | High-Efficiency Microwave Rectifying Circuits with Extended Dynamic Range Pengde Wu, Kama Huang, Changjun Liu (Sichuan Univ.) |
In this paper, a microwave rectifier based on elimination of input filter is proposed to operate in a wide range of inpu... [more] | |
| LQE, CPM, ED | 2017-11-30 16:15 |
Aichi | Nagoya Inst. tech. | Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy Kenji Shiojima, Takanori Hashizume (Univ. of Fukui), Masafumi Horikiri, Takeshi Tanaka (SCIOCS), Tomoyoshi Mishima (Hosei Univ.) ED2017-55 CPM2017-98 LQE2017-68 |
We characterized the effect of the surface morphology on electrical properties of the n-GaN drift-layers by using scanni... [more] | ED2017-55 CPM2017-98 LQE2017-68 pp.27-32 |
| SDM, ED, CPM | 2017-05-26 10:45 |
Aichi | VBL, Nagoya University | N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] | ED2017-26 CPM2017-12 SDM2017-20 pp.59-64 |
| WPT | 2017-03-07 13:25 |
Kyoto | Kyoto Univ. Uji Campus | WPT2016-79 |
To reduce the weight of a satellite, an internal wireless system for satellites was proposed in a previous study. It is ... [more] | WPT2016-79 pp.75-79 |
| CPM, LQE, ED | 2016-12-12 13:25 |
Kyoto | Kyoto University | Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-58 CPM2016-91 LQE2016-74 |
We characterized an early stage of interface degradation by high-reverse-voltage application in Au/Ni/n-GaN Schottky con... [more] | ED2016-58 CPM2016-91 LQE2016-74 pp.5-8 |
| MW, WPT | 2016-04-21 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 5.8 GHz-band high efficiency rectifier with a low resistance and high breakdown voltage GaAs Schottky Barrier Diode Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Jun Shimokawatoko, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric Co.) WPT2016-3 MW2016-3 |
High RF-DC conversion efficiency at high input power are required for rectifiers used in receivers of the microwave powe... [more] | WPT2016-3 MW2016-3 pp.11-15 |
| ED | 2016-01-20 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
GaN Schottky Barrier Diode and Microwave Power Transmission Yasuo Ohno (LaS) ED2015-117 |
GaN based electron devices have high potential for high frequency, high power applications, but applications with high i... [more] | ED2015-117 pp.31-35 |
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