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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2024-06-21 14:00 |
Osaka | Kwansei Gakuin Univ., Umeda Campus | [Invited Talk]
Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping Takeru Kumabe (Nagoya Univ.), Akira Yoshikawa (Asahi Kasei), Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, Hiroshi Amano (Nagoya Univ.) |
[more] | |
| LQE, ED, CPM | 2023-11-30 15:20 |
Shizuoka | Formation of p-type GaN by Mg thermal diffusion and challenges for device applications Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)  ED2023-19 CPM2023-61 LQE2023-59 |
Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ... [more] | ED2023-19 CPM2023-61 LQE2023-59 pp.25-30 |
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| LQE, ED, CPM | 2023-11-30 15:45 |
Shizuoka | Growth of low carbon density GaN on (0001) plane by MOVPE Hirotaka Watanabe, Shugo Nitta, Naoki Fujimoto, Seiya Kawasaki, Takeru Kumabe, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-20 CPM2023-62 LQE2023-60 |
[more] | ED2023-20 CPM2023-62 LQE2023-60 pp.31-35 |
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| SDM | 2019-06-21 16:25 |
Aichi | Nagoya Univ. VBL3F | Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2019-34 |
[more] | SDM2019-34 pp.43-46 |
| SDM | 2018-06-25 11:00 |
Aichi | Nagoya Univ. VBL3F | Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2018-16 |
[more] | SDM2018-16 pp.1-4 |
| LQE, CPM, ED | 2017-11-30 15:25 |
Aichi | Nagoya Inst. tech. | Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2017-53 CPM2017-96 LQE2017-66 |
GaN epitaxial layer grown on -c plane substrate by MOVPE has a smaller amount of carbon incorporation that compensates e... [more] | ED2017-53 CPM2017-96 LQE2017-66 pp.19-22 |
| ED, CPM, SDM | 2015-05-28 14:50 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Semi-polar GaN (10-13) grown on nominal Si (001) substrate with sputtered AlN buffer layer Hojun Lee, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
[more] | |
| CPM | 2014-09-05 09:55 |
Yamagata | The 100th Anniversary Hall, Yamagata University | Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface Daiki Sato, Tomohiro Nishitani, Takuya Maekawa, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) CPM2014-84 |
The photocathode using Negative Electron Affinity (NEA) surface on a semiconductor has been applied for science technolo... [more] | CPM2014-84 pp.49-54 |
| CPM, ED, SDM | 2014-05-29 14:00 |
Aichi | P - GaN by Mg Ion Implantation for Power Device Applications Zheng Sun, Marc Olsson (Nagoya Univ.), Tsutomu Nagayama (Nissin Ion Equipment), Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2014-40 CPM2014-23 SDM2014-38 |
We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique an... [more] | ED2014-40 CPM2014-23 SDM2014-38 pp.109-112 |
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| CPM, LQE, ED | 2013-11-28 15:50 |
Osaka | Quantum Efficiency of p-GaN with NEA surface for high brightness electron source Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.) ED2013-73 CPM2013-132 LQE2013-108 |
We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of th... [more] | ED2013-73 CPM2013-132 LQE2013-108 pp.43-46 |
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| CPM, LQE, ED | 2013-11-28 16:15 |
Osaka | Study on C doping in GaN and AlGaN by MOVPE Yuya Wakasugi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2013-74 CPM2013-133 LQE2013-109 |
We grew Mg/C co-doped GaN and AlGaN by MOVPE for identifying the C level in GaN and AlGaN. We measured electrical and op... [more] | ED2013-74 CPM2013-133 LQE2013-109 pp.47-50 |
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| CPM, LQE, ED | 2013-11-29 10:20 |
Osaka | Growth of thick InGaN epilayer by high-pressure MOVPE Kouhei Yamashita, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) |
[more] | ||
| ED, SDM, CPM | 2012-05-17 14:30 |
Aichi | VBL, Toyohashi Univ. of Technol. | Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22 |
We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] | ED2012-20 CPM2012-4 SDM2012-22 pp.15-18 |
| RCS, IN (Joint) |
2011-05-26 15:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Standardization Status of IMT-Advanced in ITU-R Yoshio Honda (Nippon Ericsson) IN2011-24 RCS2011-25 |
This paper describes the standardization status of IMT-Advanced radio interfaces in ITU-R WP 5D. [more] | IN2011-24 RCS2011-25 pp.35-38(IN), pp.37-40(RCS) |
| CPM, SDM, ED | 2011-05-19 13:25 |
Aichi | Nagoya Univ. (VBL) | Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Takuya Tabata, Ji-Hyun Paek, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2011-9 CPM2011-16 SDM2011-22 |
InGaN nanowires (NWs) are expected to have a good property with visible long wavelength range. In this study, we attempt... [more] | ED2011-9 CPM2011-16 SDM2011-22 pp.45-48 |
| CPM, SDM, ED | 2011-05-19 15:15 |
Aichi | Nagoya Univ. (VBL) | MOVPE growth of thick InGaN on (1-101)GaN/Si Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech) ED2011-13 CPM2011-20 SDM2011-26 |
We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of les... [more] | ED2011-13 CPM2011-20 SDM2011-26 pp.63-66 |
| CPM, SDM, ED | 2011-05-20 11:15 |
Aichi | Nagoya Univ. (VBL) | Aging test of AlGaN-based ultraviolet light emitting diodes
-- The Degradation Mechanism of UV-LED -- Park Gwi Jin, Takayuki Sugiyama, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Tetsuhiko Inazu, Takehiko Fujita, Cyril Pernot, Akira Hirano (UV Craftory) ED2011-24 CPM2011-31 SDM2011-37 |
[more] | ED2011-24 CPM2011-31 SDM2011-37 pp.123-126 |
| CPM, SDM, ED | 2011-05-20 16:40 |
Aichi | Nagoya Univ. (VBL) | Current collapse in GaN-based HFETs
-- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate -- Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47 |
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] | ED2011-34 CPM2011-41 SDM2011-47 pp.175-178 |
| ED, SDM | 2010-02-22 14:50 |
Okinawa | Okinawaken-Seinen-Kaikan | MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) ED2009-200 SDM2009-197 |
We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN str... [more] | ED2009-200 SDM2009-197 pp.23-28 |
| CPM, ED, LQE | 2007-10-12 15:05 |
Fukui | Fukui Univ. | Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.) ED2007-176 CPM2007-102 LQE2007-77 |
Hetero-epitaxial growth of an InGaN thin film was attempted with MOVPE on a GaN facet structure. The GaN trapezoidal str... [more] | ED2007-176 CPM2007-102 LQE2007-77 pp.97-102 |
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