Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2008-198
24-GHz 1-V Pseudo-Stacked Mixer
Nobuhiro Shiramizu, Toru Masuda, Takahiro Nakamura, Katsuyoshi Washio (Hitachi, Ltd.)
pp. 1 - 5
ED2008-199
Millimeter-wave Discrete Harmonic Mixer using Flipchip Interconnect
Kenji Kawakami, Takuya Suzuki, Ko Kanaya, Yoichi Kitamura, Morishige Hieda (Mitsubishi Electric Co.)
pp. 7 - 10
ED2008-200
design of broadband amplifier with consideration of output capacitance
Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Co.)
pp. 11 - 15
ED2008-201
V-band 8th Order Push-Push Oscillator
Kengo Kawasaki, Takayuki Tanaka, Masayoshi Aikawa (Saga Univ.)
pp. 17 - 22
ED2008-202
GaN-based Natural Super Junction Diodes
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.)
pp. 23 - 27
ED2008-203
Evaluation of reverse conduction GaN FET
Osamu Machida, Nobuo Kaneko, Ryohei Baba, Michiyoshi Izawa, Shinichi Iwakami, Masataka Yanagihara, Hirokazu Goto, Akio Iwabuchi (Sanken Electric Co.)
pp. 29 - 34
ED2008-204
Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit
Wataru Saito (Toshiba Corp.), Tomokazu Domon (Toshiba Business and Life Service), Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Masakazu Yamaguchi (Toshiba Corp.)
pp. 35 - 40
ED2008-205
Analysis of Temperature Distribution of a Heated Material Placed in a Microwave Oven
-- Considering the Change of Electric Permittivity by Temperature Rise --
Masaki Karakawa, Shinya Watanabe, Osamu Hashimoto (Aoyama Gakuin Univ.)
pp. 41 - 46
ED2008-206
Improvement of the Stopband Characteristics of Banpass Filters Using Microstrip Composite Shunt Resonators
Takanori Tozawa, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)
pp. 47 - 52
ED2008-207
Analysis of A Microstrip Parallel-Coupled Dual-Mode Ring Resonator and Its Application to the Design of Filters
Hideyuki Sasaki, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan.), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)
pp. 53 - 58
ED2008-208
Submillimeter Wave Nonreciprocal Propagation Characteristics of a Coupled Line Containing Solid-State Plasma Material
Kei Maruyama, Tetsuo Obunai, Shinichi Yodokawa, Satoru Kousaka (Akita Univ.)
pp. 59 - 64
ED2008-209
Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate
Takehiko Makita, Isao Tamai, Shinichi Hoshi, Shohei Seki (Oki Electric Industry Co., Ltd.)
pp. 65 - 70
ED2008-210
A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Nobuyuki Ogawa, Masatoshi Nakayama (Mitsubishi Electric Co.)
pp. 71 - 76
ED2008-211
Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs
Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.)
pp. 77 - 81
ED2008-212
Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor
Takafumi Uesawa, Masayuki Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)
pp. 83 - 88
ED2008-213
Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver
Hiroyuki Fukuyama, Toshihiro Itoh, Tomofumi Furuta, Kenji Kurishima, Masami Tokumitsu, Koichi Murata (NTT)
pp. 89 - 94
ED2008-214
High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.)
pp. 95 - 99
ED2008-215
Characteristics on Primary Radiator Fed by Coaxial Cable at 60GHz
Makoto Okiyokota, Motonori Nakamura, Futoshi Kuroki (Inst. of National College of Tech.)
pp. 101 - 104
ED2008-216
Experimental Study on Bilaterally Metal-loaded Tri-plate Transmission Line at Millimeter-wavelengths
Ryo-ji Tamaru, Futoshi Kuroki (Kure Nat'l Coll of Tech)
pp. 105 - 108
ED2008-217
A Report on the China-Japan Joint Microwave Conference 2008
Futoshi Kuroki (Kure Nat'l Coll of Tech)
pp. 109 - 112
ED2008-218
C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,)
pp. 113 - 118
ED2008-219
Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.)
pp. 119 - 123
ED2008-220
AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators
Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
pp. 125 - 128
ED2008-221
High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications
Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.)
pp. 129 - 133
ED2008-222
A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer
Akihiro Ando, Yoichiro Takayama, Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo (The Univ of Electro-Communications)
pp. 135 - 139
ED2008-223
Mesa-gate AlGaN/GaN HEMT having nano-width channels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)
pp. 141 - 144
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.