Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2012-65
Electrical Properties of Si-Based Heterojunctions by Surface-Activated Bonding
Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.), Eiji Higurashi (Univ. Tokyo)
pp. 1 - 5
ED2012-66
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT)
p. 7
ED2012-67
Applicationo of III-V nitride films to photovoltaic device
Masatomo Sumiya, Liwen Sang, Mickael Lozac'h (NIMS)
pp. 9 - 12
ED2012-68
Estimation of Surface Fermi level differences in surface-modified GaN crystals
Yohei Sugiura, Ryosuke Amiya, Daiki Tajimi (Kogakuin Univ.), Takeyoshi Onuma (TNCT), Tomohiro Yamaguchi, Tohru Honda (Kogakuin Univ.)
pp. 13 - 15
ED2012-69
High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch)
Hiroki Tokunaga, Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Akira Yamaguchi, Toshiya Tabuchi (TNSC), Kou Matumoto (TNEMC)
pp. 17 - 20
ED2012-70
Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction
Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.)
pp. 21 - 24
ED2012-71
Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates
Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.)
pp. 25 - 28
ED2012-72
Evaluation of transient current of GaN HEMTs on Si under light
Takuya Joka, Akio Wakejima, Takashi Egawa (NIT)
pp. 29 - 32
ED2012-73
Electrical characteristics of MIS-diodes with Al2O3 deposited by ALD on GaN
Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech)
pp. 33 - 36
ED2012-74
Effects of process conditions on AlGaN/GaN hetero-MOS structures
Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.)
pp. 37 - 40
ED2012-75
Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films
Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.)
pp. 41 - 44
ED2012-76
Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui)
pp. 45 - 50
ED2012-77
Selective MOVPE growth on nonpolar GaN substrates
Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.)
pp. 51 - 54
ED2012-78
RF-MBE Growth of InGaN-based quantum nanostructures using DERI
Tsutomu Araki, Nao Uematsu, Junichi Sakaguchi, Ke Wang (Ritsumeikan Univ.), Tomohiro Yamaguchi (Kogakuin Univ.), Euijoon Yoon (Seoul National Univ.), Yasushi Nanishi (Ritsumeikan Univ.)
pp. 55 - 58
ED2012-79
Nitride semiconductor np-LEDs for improvement of efficiency droop
Takatoshi Morita, Mitsuru Kaga, Yuka Kuwano, Kenjo Matsui, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ. Nagoya Univ.)
pp. 59 - 64
ED2012-80
Fabrication of red light emitting diode with GaN:Eu,Mg active layer
Tatsuki Otani, Hiroto Sekiguchi (Toyohashi Univ. Tech), Yasufumi Takagi (Hamamatsu Photonics K.K.), Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech)
pp. 65 - 70
ED2012-81
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia)
pp. 71 - 74
ED2012-82
Fabrication of moth-eye patterned sapphire substrate (MPSS) and its application to LEDs
Takayoshi Tsuchiya, Shinya Umeda, Mihoko Sowa (Meijo Univ.), Toshiyuki Kondo, Tsukasa Kitano, Midori Mori, Atsushi Suzuki, Koichi Naniwae, Hitoshi Sekine (ELSEED), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
pp. 75 - 80
ED2012-83
Mg acceptor activation inp-GaN of the structure with n-GaN surface
Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
pp. 81 - 85
ED2012-84
Approaches for improving efficiency of AlGaN-based deep-UV LEDs
Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.)
pp. 87 - 92
ED2012-85
Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source
Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS)
pp. 93 - 96
ED2012-86
Analysis of band structure and Auger recombination process in wurtzite InGaN
Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba)
pp. 97 - 101
ED2012-87
The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films
Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART)
pp. 103 - 108
ED2012-88
Fabrication of radial InP/InAsP quantum wells on InP nanowires for near-infrared optical devices
Kenichi Kawaguchi, Yoshiaki Nakata, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Lab.), Yasuhiko Arakawa (Univ. of Tokyo)
pp. 109 - 112
ED2012-89
Growth of InAs-QDs emitting at 1um with a broadband spectrum via In-flush method for biomedical imaging
Yuji Hino, Nobuhiko Ozaki (Wakayama Univ.), Shunsuke Ohkouchi (NEC Corp.), Naoki Ikeda, Yoshimasa Sugimoto (NIMS)
pp. 113 - 116
ED2012-90
Study on inductively-coupled-plasma-dry-etching-mask for AlGaAs photonic crystal fabrication
Yuji Togano, Yuta Kitabayashi, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.)
pp. 117 - 120
ED2012-91
Development of Ge Light Emitter for Monolithic Light Source
Kazuki Tani, Shin-ichi Saito, Katsuya Oda (PETRA), Tadashi Okumura, Toshiyuki Mine (Hitachi), Tatemi Ido (PETRA)
pp. 121 - 124
ED2012-92
Design of an optical spectrum control circuit and flattening its transmission spectrum with phase error compensation
Tatsuhiko Ikeda (Keio Univ.), Takayuki Mizuno, Hiroshi Takahashi (NTT), Hideaki Asakura, Hiroyuki Tsuda (Keio Univ.)
pp. 125 - 129
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.