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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 62  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MRIS, ITE-MMS 2024-06-06
15:00
Miyagi Tohoku Univ., RIEC
(Primary: On-site, Secondary: Online)
High rate RF sputtering of MgO underlayer by hot cathode method with porous target for heat assisted magnetic recording media
Kota Yamada, Daiki Miyazaki, Yuki Hirokawa, Seong-Jae Jeon, Akihiro Shimizu, Shintaro Hinata, Tomoyuki Ogawa, Shin Saito (Tohoku Univ.), Kosaku Iwatani (TOSHIMA Manufacturing Co., Ltd.)
(To be available after the conference date) [more]
EA, US
(Joint)
2023-12-22
13:00
Fukuoka   [Poster Presentation] Fabrication of epitaxial piezoelectric layer/acoustic Bragg reflector structure by etching of epitaxial sacrificial layer
Satoshi Tokai, Takahiko Yanagitani (Waseda Univ.) US2023-60
Q factor and power durability are expected to be improve d by using s ingle crystalline piezoelectric thin films in BAW ... [more] US2023-60
pp.24-29
ED 2023-12-07
14:50
Aichi WINC AICHI Fabrication of Hafnium Nitride Spindt-type Field Emitter Arrays by Triode High Power Pulsed Magnetron Sputtering
Shun Kondo (Seikei University/AIST), Takeo Nakano, Md. Suruz Mian (Seikei University), Masayoshi Nagao, Hiromasa Murata (AIST) ED2023-41
We have been attempting to fabricate Spindt-type emitter using the triode high-power pulsed magnetron sputtering (t-HPPM... [more] ED2023-41
pp.11-14
CPM 2023-08-01
10:05
Hokkaido
(Primary: On-site, Secondary: Online)
Evaluation of the Physical Properties of Reactive sputtered Ti or V-based MAX alloy thin film
Kazuki Ueda, Kazunobu Wkamatsu, Takeyasu Saito, Naoki Okamoto (Osaka Metropolitan Univ.) CPM2023-20
Currently, Cu is the main wiring material in leading-edge semiconductor devices. However, since Cu easily diffuses into ... [more] CPM2023-20
pp.33-35
SDM, ED, CPM 2022-05-27
14:40
Online Online Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications
Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effecti... [more] ED2022-10 CPM2022-4 SDM2022-17
pp.13-16
MRIS, ITE-MMS 2021-10-08
15:35
Online Online Voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure
Tomohiro Nozaki, Shingo Tamaru, Makoto Konoto, Takayuki Nozaki, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa (AIST) MRIS2021-9
Voltage controlled magnetic anisotropy (VCMA) effect has been attracted attention as a low power consumption spin manipu... [more] MRIS2021-9
pp.13-16
MRIS, ITE-MMS 2021-06-11
10:00
Miyagi RIEC, Tohoku U.
(Primary: On-site, Secondary: Online)
Magnetic properties of cobalt ferrite thin films deposited on NiO and Cu2O seed layers
Daiki Isurugi (Tohoku Univ.), Kenji Kamishima, Koichi Kakizaki (Saitama Univ.) MRIS2021-4
In order to make Cobalt ferrite(CFO) exhibit perpendicular magnetic anisotropy, CFO thin films were deposited on a few o... [more] MRIS2021-4
pp.18-21
CPM 2021-03-03
10:45
Online Online Magnetic domain of highly-Bi-doped sputtered garnet films for a random number generator
Izumi Nakamura, Shutaro Yoshida, Shinichiro Mito (NITTC) CPM2020-61
Physical random number generator is necessary to generate true random numbers. However, a physical random number generat... [more] CPM2020-61
pp.22-25
LQE, CPM, ED 2020-11-27
14:30
Online Online Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing
Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) ED2020-22 CPM2020-43 LQE2020-73
Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation... [more] ED2020-22 CPM2020-43 LQE2020-73
pp.83-86
LQE, CPM, ED 2020-11-27
15:20
Online Online MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations
Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.) ED2020-24 CPM2020-45 LQE2020-75
We conducted metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on face-to-face annealed sputtered AlN templ... [more] ED2020-24 CPM2020-45 LQE2020-75
pp.91-94
SCE 2019-08-09
13:05
Ibaraki National Institute of Advanced Industrial Science and Technology Preparation and evaluation of Nb3Ge superconducting thin films
Akira Kawakami, Hirotaka Terai (NICT), Yoshinori Uzawa (NAOJ) SCE2019-13
The Nb3Ge thin film with the A15 crystal structure exhibits a superconducting transition temperature of up to 23 K, and ... [more] SCE2019-13
pp.27-30
SDM, EID 2016-12-12
09:30
Nara NAIST Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells
Song Zhang, Yasuaki Yishikawa, Itaru Raifuku, Tiphaine Bourgeteau, Yukiharu Uraoka (NAIST), Erik Johnson, Martin Foldyna, Yvan Bonnassieux, Pere Roca i Cabarrocas (Ecole polytechnique) EID2016-9 SDM2016-90
In recent years, the study of tandem solar cells that enable to achieve high efficiency has gathered much attention. The... [more] EID2016-9 SDM2016-90
pp.1-6
SDM 2016-06-29
16:40
Tokyo Campus Innovation Center Tokyo MoS2 film formation by RF magnetron sputtering for thin film transistors
Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] SDM2016-46
pp.75-78
EID, SDM 2015-12-14
13:45
Kyoto Ryukoku University, Avanti Kyoto Hall Evaluation of In2O3 film deposited by RF magnetron sputtering
Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98
Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and ... [more] EID2015-15 SDM2015-98
pp.27-30
SDM, EID 2014-12-12
14:45
Kyoto Kyoto University Characteristics of Ga-Sn-Oxide thin film
Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-28 SDM2014-123
Thin films of Ga-Sn-O (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio... [more] EID2014-28 SDM2014-123
pp.79-82
MRIS, ITE-MMS 2014-12-12
09:50
Ehime Ehime Univ. Stacking structure dependence of magnetic properties of Co/Pt layer stacked film sputter - deposited at room temperature
Taruho Tsuchiya, Naoki Honda, Hironaga Uchida (Tohoku Inst Tech), Shin Saito, Shintaro Hinata (Tohoku Univ) MR2014-38
Preparation of L11 ordered Co-Pt film with atomic layer stacking was investigated using room temperature sputtering aimi... [more] MR2014-38
pp.59-64
MRIS, ITE-MMS 2014-07-17
14:55
Tokyo Tokyo Institute of Technology Exploratory experiments in recording on sputtered magnetic tape at an areal density of 148 Gb/in2
Junichi Tachibana, Tetsuo Endo, Ryoichi Hiratsuka, Satoru Inoue (Sony), David Berman, Pierre-olivier Jubert (HGST), Teya Topuria, Chie C Poon, Wayne Iwaino (IBM Almaden) MR2014-12
A sputter deposited CoPtCr-SiO2 perpendicular recording media with excellent orientation was successfully grown on a thi... [more] MR2014-12
pp.23-28
SDM 2013-12-13
10:00
Nara NAIST Silicon nanowire growth by vapor liquid solid mode using indium dots
Keigo Fukunaga, Tomoaki Hatayama, Hiroshi Yano, Naofumi Okamoto, Ayumi Tani, Yasuaki Ishikawa, Takashi Fuyuki (NAIST) SDM2013-119
A silicon nanowire (Si-NW) structure is one of the key structures to improve conversion efficiency in silicon solar cell... [more] SDM2013-119
pp.19-23
SDM 2013-12-13
10:40
Nara NAIST Fabrication of n-type Silicon Solar Cells by boron doping method using laser process
Yuki Yamamoto, Hideki Nishimura, Takanori Okamura, Keigo Fukunaga, Takashi Fuyuki (NAIST) SDM2013-121
To fabricate the n-type solar cells by boron doping with conventional diffusion process is difficult because of low diff... [more] SDM2013-121
pp.31-35
MRIS, ITE-MMS 2013-12-12
16:15
Ehime Ehime Univ. Deposition of Co/Pt film with perpendicular magnetic anisotropy by layer stacking sputtering
Taruho Tsuchiya, Naoki Honda (Tohoku Inst. of Tech.) MR2013-30
Low temperature preparation of Co/Pt stacked film with high magnetic anisotropy was studied using atomic layer stacking ... [more] MR2013-30
pp.33-38
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