Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MRIS, ITE-MMS |
2024-06-06 15:00 |
Miyagi |
Tohoku Univ., RIEC (Primary: On-site, Secondary: Online) |
High rate RF sputtering of MgO underlayer by hot cathode method with porous target for heat assisted magnetic recording media Kota Yamada, Daiki Miyazaki, Yuki Hirokawa, Seong-Jae Jeon, Akihiro Shimizu, Shintaro Hinata, Tomoyuki Ogawa, Shin Saito (Tohoku Univ.), Kosaku Iwatani (TOSHIMA Manufacturing Co., Ltd.) |
(To be available after the conference date) [more] |
|
EA, US (Joint) |
2023-12-22 13:00 |
Fukuoka |
|
[Poster Presentation]
Fabrication of epitaxial piezoelectric layer/acoustic Bragg reflector structure by etching of epitaxial sacrificial layer Satoshi Tokai, Takahiko Yanagitani (Waseda Univ.) US2023-60 |
Q factor and power durability are expected to be improve d by using s ingle crystalline piezoelectric thin films in BAW ... [more] |
US2023-60 pp.24-29 |
ED |
2023-12-07 14:50 |
Aichi |
WINC AICHI |
Fabrication of Hafnium Nitride Spindt-type Field Emitter Arrays by Triode High Power Pulsed Magnetron Sputtering Shun Kondo (Seikei University/AIST), Takeo Nakano, Md. Suruz Mian (Seikei University), Masayoshi Nagao, Hiromasa Murata (AIST) ED2023-41 |
We have been attempting to fabricate Spindt-type emitter using the triode high-power pulsed magnetron sputtering (t-HPPM... [more] |
ED2023-41 pp.11-14 |
CPM |
2023-08-01 10:05 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Evaluation of the Physical Properties of Reactive sputtered Ti or V-based MAX alloy thin film Kazuki Ueda, Kazunobu Wkamatsu, Takeyasu Saito, Naoki Okamoto (Osaka Metropolitan Univ.) CPM2023-20 |
Currently, Cu is the main wiring material in leading-edge semiconductor devices. However, since Cu easily diffuses into ... [more] |
CPM2023-20 pp.33-35 |
SDM, ED, CPM |
2022-05-27 14:40 |
Online |
Online |
Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17 |
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effecti... [more] |
ED2022-10 CPM2022-4 SDM2022-17 pp.13-16 |
MRIS, ITE-MMS |
2021-10-08 15:35 |
Online |
Online |
Voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure Tomohiro Nozaki, Shingo Tamaru, Makoto Konoto, Takayuki Nozaki, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa (AIST) MRIS2021-9 |
Voltage controlled magnetic anisotropy (VCMA) effect has been attracted attention as a low power consumption spin manipu... [more] |
MRIS2021-9 pp.13-16 |
MRIS, ITE-MMS |
2021-06-11 10:00 |
Miyagi |
RIEC, Tohoku U. (Primary: On-site, Secondary: Online) |
Magnetic properties of cobalt ferrite thin films deposited on NiO and Cu2O seed layers Daiki Isurugi (Tohoku Univ.), Kenji Kamishima, Koichi Kakizaki (Saitama Univ.) MRIS2021-4 |
In order to make Cobalt ferrite(CFO) exhibit perpendicular magnetic anisotropy, CFO thin films were deposited on a few o... [more] |
MRIS2021-4 pp.18-21 |
CPM |
2021-03-03 10:45 |
Online |
Online |
Magnetic domain of highly-Bi-doped sputtered garnet films for a random number generator Izumi Nakamura, Shutaro Yoshida, Shinichiro Mito (NITTC) CPM2020-61 |
Physical random number generator is necessary to generate true random numbers. However, a physical random number generat... [more] |
CPM2020-61 pp.22-25 |
LQE, CPM, ED |
2020-11-27 14:30 |
Online |
Online |
Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) ED2020-22 CPM2020-43 LQE2020-73 |
Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation... [more] |
ED2020-22 CPM2020-43 LQE2020-73 pp.83-86 |
LQE, CPM, ED |
2020-11-27 15:20 |
Online |
Online |
MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.) ED2020-24 CPM2020-45 LQE2020-75 |
We conducted metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on face-to-face annealed sputtered AlN templ... [more] |
ED2020-24 CPM2020-45 LQE2020-75 pp.91-94 |
SCE |
2019-08-09 13:05 |
Ibaraki |
National Institute of Advanced Industrial Science and Technology |
Preparation and evaluation of Nb3Ge superconducting thin films Akira Kawakami, Hirotaka Terai (NICT), Yoshinori Uzawa (NAOJ) SCE2019-13 |
The Nb3Ge thin film with the A15 crystal structure exhibits a superconducting transition temperature of up to 23 K, and ... [more] |
SCE2019-13 pp.27-30 |
SDM, EID |
2016-12-12 09:30 |
Nara |
NAIST |
Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells Song Zhang, Yasuaki Yishikawa, Itaru Raifuku, Tiphaine Bourgeteau, Yukiharu Uraoka (NAIST), Erik Johnson, Martin Foldyna, Yvan Bonnassieux, Pere Roca i Cabarrocas (Ecole polytechnique) EID2016-9 SDM2016-90 |
In recent years, the study of tandem solar cells that enable to achieve high efficiency has gathered much attention. The... [more] |
EID2016-9 SDM2016-90 pp.1-6 |
SDM |
2016-06-29 16:40 |
Tokyo |
Campus Innovation Center Tokyo |
MoS2 film formation by RF magnetron sputtering for thin film transistors Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46 |
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] |
SDM2016-46 pp.75-78 |
EID, SDM |
2015-12-14 13:45 |
Kyoto |
Ryukoku University, Avanti Kyoto Hall |
Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98 |
Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and ... [more] |
EID2015-15 SDM2015-98 pp.27-30 |
SDM, EID |
2014-12-12 14:45 |
Kyoto |
Kyoto University |
Characteristics of Ga-Sn-Oxide thin film Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-28 SDM2014-123 |
Thin films of Ga-Sn-O (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio... [more] |
EID2014-28 SDM2014-123 pp.79-82 |
MRIS, ITE-MMS |
2014-12-12 09:50 |
Ehime |
Ehime Univ. |
Stacking structure dependence of magnetic properties of Co/Pt layer stacked film sputter - deposited at room temperature Taruho Tsuchiya, Naoki Honda, Hironaga Uchida (Tohoku Inst Tech), Shin Saito, Shintaro Hinata (Tohoku Univ) MR2014-38 |
Preparation of L11 ordered Co-Pt film with atomic layer stacking was investigated using room temperature sputtering aimi... [more] |
MR2014-38 pp.59-64 |
MRIS, ITE-MMS |
2014-07-17 14:55 |
Tokyo |
Tokyo Institute of Technology |
Exploratory experiments in recording on sputtered magnetic tape at an areal density of 148 Gb/in2 Junichi Tachibana, Tetsuo Endo, Ryoichi Hiratsuka, Satoru Inoue (Sony), David Berman, Pierre-olivier Jubert (HGST), Teya Topuria, Chie C Poon, Wayne Iwaino (IBM Almaden) MR2014-12 |
A sputter deposited CoPtCr-SiO2 perpendicular recording media with excellent orientation was successfully grown on a thi... [more] |
MR2014-12 pp.23-28 |
SDM |
2013-12-13 10:00 |
Nara |
NAIST |
Silicon nanowire growth by vapor liquid solid mode using indium dots Keigo Fukunaga, Tomoaki Hatayama, Hiroshi Yano, Naofumi Okamoto, Ayumi Tani, Yasuaki Ishikawa, Takashi Fuyuki (NAIST) SDM2013-119 |
A silicon nanowire (Si-NW) structure is one of the key structures to improve conversion efficiency in silicon solar cell... [more] |
SDM2013-119 pp.19-23 |
SDM |
2013-12-13 10:40 |
Nara |
NAIST |
Fabrication of n-type Silicon Solar Cells by boron doping method using laser process Yuki Yamamoto, Hideki Nishimura, Takanori Okamura, Keigo Fukunaga, Takashi Fuyuki (NAIST) SDM2013-121 |
To fabricate the n-type solar cells by boron doping with conventional diffusion process is difficult because of low diff... [more] |
SDM2013-121 pp.31-35 |
MRIS, ITE-MMS |
2013-12-12 16:15 |
Ehime |
Ehime Univ. |
Deposition of Co/Pt film with perpendicular magnetic anisotropy by layer stacking sputtering Taruho Tsuchiya, Naoki Honda (Tohoku Inst. of Tech.) MR2013-30 |
Low temperature preparation of Co/Pt stacked film with high magnetic anisotropy was studied using atomic layer stacking ... [more] |
MR2013-30 pp.33-38 |