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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2018-11-09 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers Hajime Tanaka, Nobuya Mori (Osaka Univ.)  SDM2018-71 |
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] | SDM2018-71 pp.35-40 |
| SDM | 2018-06-25 11:40 |
Aichi | Nagoya Univ. VBL3F | Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18 |
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] | SDM2018-18 pp.11-14 |
| SDM | 2018-06-25 13:30 |
Aichi | Nagoya Univ. VBL3F | [Invited Lecture]
Inversion channel diamond MOSFET
-- Formation of diamond MOS interface by wet annealing -- Tsubasa Matsumoto (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Takao Inokuma (Kanazawa Univ.), Satoshi Yamasaki (AIST), Norio Tokuda (Kanazawa Univ.) SDM2018-20 |
We fabricated inversion channel diamond MOSFET with normally off characteristics. The diamond MOSFET with the inversion ... [more] | SDM2018-20 pp.19-22 |
| LQE, CPM, ED | 2017-12-01 13:20 |
Aichi | Nagoya Inst. tech. | Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) ED2017-63 CPM2017-106 LQE2017-76 |
Diamond is expected to be applied to high frequency and high power devices, so far high frequency and high power operati... [more] | ED2017-63 CPM2017-106 LQE2017-76 pp.69-72 |
| SDM | 2016-11-10 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80 |
We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] | SDM2016-80 pp.9-14 |
| SDM | 2016-11-11 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] | SDM2016-86 pp.43-47 |
| SDM, OME | 2016-04-08 12:00 |
Okinawa | Okinawa Prefectural Museum & Art Museum | [Invited Talk]
OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki (Tokyo Tech) SDM2016-3 OME2016-3 |
High hole mobility, higher than that of a-Si, has been reported for the organic semiconductor field-effect transistor (O... [more] | SDM2016-3 OME2016-3 pp.11-15 |
| ED | 2015-07-24 15:35 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical properties of SiC MOSFETs with various substrate impurity concentrations Hiroshi Yano (NAIST/Univ. Tsukuba), Hiroto Yuki, Takashi Fuyuki (NAIST) ED2015-41 |
We have investigated electrical properties of n-channel MOSFETs fabricated on Si-face 4H-SiC with various substrate impu... [more] | ED2015-41 pp.25-29 |
| ICD, ITE-IST | 2015-07-03 10:30 |
Kanagawa | National Defense Academy | [Invited Talk]
All-Digital-ADC TAD for Sensor/RF Digitization Resulting in Distinctive Scalability Takamoto Watanabe, Shigenori Yamauchi, Nobuyuki Taguchi, Tomohito Terasawa (DENSO) ICD2015-19 |
Sensor nodes and communications become more and more important factors in IoT applications, including autonomous car sys... [more] | ICD2015-19 pp.27-32 |
| SDM | 2015-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) SDM2015-38 |
To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching... [more] | SDM2015-38 pp.1-4 |
| SDM | 2015-06-19 10:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40 |
The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C... [more] | SDM2015-40 pp.11-16 |
| SDM | 2015-06-19 11:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric) SDM2015-42 |
The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray... [more] | SDM2015-42 pp.21-26 |
| SDM | 2015-06-19 16:10 |
Aichi | VBL, Nagoya Univ. | Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53 |
The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid b... [more] | SDM2015-53 pp.81-86 |
| SDM | 2015-01-27 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs
-- Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties -- Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) SDM2014-137 |
High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found tha... [more] | SDM2014-137 pp.9-12 |
| OPE, LQE | 2014-12-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan, NTT Atsugi R&D center | Thermal resistance improvement and low-resistance lateral PIN junction formation technique on III-V-OI wafers Yuki Ikku, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) OPE2014-146 LQE2014-133 |
III-V CMOS photonics is a platform which enables strong optical confinement to the III-V waveguides by using III-V-on-In... [more] | OPE2014-146 LQE2014-133 pp.37-40 |
| SDM, EID | 2014-12-12 16:15 |
Kyoto | Kyoto University | Frequency dependence of Split C-V characteristics in Si-face 4H-SiC n-MOSFETs Hiroto Yuki (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-33 SDM2014-128 |
Interface properties in 4H-SiC n-MOSFETs on Si-face were characterized by using split C-V method in the frequency range ... [more] | EID2014-33 SDM2014-128 pp.103-107 |
| SDM, EID | 2014-12-12 16:30 |
Kyoto | Kyoto University | Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-34 SDM2014-129 |
SiC MOSFETs have suffered from issues such as threshold voltage instability and low channel mobility due to high interfa... [more] | EID2014-34 SDM2014-129 pp.109-113 |
| CPM | 2014-10-24 15:20 |
Nagano | Effect of Post-Deposition Annealing in Hydrogen Atmosphere on 4H-SiCMIS Property Prepared by Thermal CVD Method Using Tetraethylorthosilicate Takuo Kanou, Yoshiyuki Akahane, Yuta Kobayashi, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2014-109 |
Silicon dioxide films were deposited by the thermal decomposition of tetraethylorthosilicate (TEOS) to form the MIS stru... [more] | CPM2014-109 pp.25-28 |
|
| ICD, SDM | 2014-08-05 13:05 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | [Invited Talk]
Oxide Semiconductor-based Transistors Formed in LSI Interconnects Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL) SDM2014-76 ICD2014-45 |
We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based... [more] | SDM2014-76 ICD2014-45 pp.77-82 |
| SDM | 2014-06-19 09:50 |
Aichi | VBL, Nagoya Univ. | Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2014-44 |
We investigated the Al-PMA effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, s... [more] | SDM2014-44 pp.7-10 |
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