IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 55 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2013-10-24
13:55
Niigata Niigata Univ. Satellite Campus TOKIMEITO Influence of self-heating on oscillation phenomena of Bi-2212 intrinsic Josephson junctions
Tsubasa Nishikata, Yukio Kotaki, Takahiro Kato (Nagaoka Univ. of Tech.), Hiroki Ishida (Toyama National College of Tech.), Hisayuki Suematsu, Yasuhiro Tamayama (Nagaoka Univ. of Tech.), Akira Kawakami (NICT), Kanji Yasui (Nagaoka Univ. of Tech.) CPM2013-94
We have been successfully fabricated an integrated THz oscillator stack with detector stack in Bi2Sr2CaCu2O8+δ (Bi-2212)... [more] CPM2013-94
pp.7-11
SCE 2013-10-02
13:35
Miyagi Tohoku University, RIEC Stack size dependence of EM wave emission from Bi-2212 IJJs
Yukio Kotaki, Tsubasa Nishikata, Akira Kawakami, Takahiro Kato, Tsuneo Suzuki, Tadachika Nakayama, Kanji Yasui, Hisayuki Suematsu, Koichi Niihara (Nagaoka Univ. of Tech.) SCE2013-20
We investigated oscillation characteristics of stacked Bi-2212 intrinsic Josephson junctions for various size (S=17×145~... [more] SCE2013-20
pp.7-12
CPM 2013-08-02
10:00
Hokkaido   Crystalline structure of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O produced by a Pt-catalyzed H2-O2 reaction
Naoya Yamaguchi, Tomohiko Takeuchi, Tomoki Nakamura, Yuki Ohashi, Eichi Nagatomi, Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2013-49
Crystalline structure of ZnO thin films, which were grown on a-plane sapphire substrates through a reaction between dime... [more] CPM2013-49
pp.51-56
EMD, CPM, OME 2013-06-21
16:35
Tokyo Kikai-Shinko-Kaikan Bldg. Effect of N2O doping on the properties of ZnO thin films grown using high-energy H2O generated by a catalytic reaction
Naoya Yamaguchi, Yuki Ohashi, Eichi Nagatomi, Yasuhiro Tamayama, Takahiro Kato, Kanji Yasui (Nagaoka Univ. of Tech.) EMD2013-22 CPM2013-37 OME2013-45
ZnO films were grown using a reaction between an alkylzinc (DMZn) gas and high-energy H2O, the latter is generated by a ... [more] EMD2013-22 CPM2013-37 OME2013-45
pp.83-87
EMD, CPM, OME 2013-06-21
16:55
Tokyo Kikai-Shinko-Kaikan Bldg. ZnO film growth using high-energy H2O generated by a catalytic reaction -- Effect of low-temperature buffer layer --
Kazuki Takezawa, Tomoki Nakamura, Takahiro Oyanagi, Takahiro Kato (Nagaoka Univ. of Tech.), Hironori Katagiri, Koichiro Oishi, Kazuo Jimbo (Nagaoka. Nat. Coll. Technol.), Kanji Yasui (Nagaoka Univ. of Tech.) EMD2013-23 CPM2013-38 OME2013-46
ZnO thin films were grown on glass substrates through a reaction between dimethylzinc and high-energy H2O. The latter wa... [more] EMD2013-23 CPM2013-38 OME2013-46
pp.89-94
CPM 2012-10-26
13:00
Niigata   Deposition characteristics of ZnO thin films using high-energy H2O genarated by a catalytic reaction
Kanji Yasui, Hitoshi Miura, Masami Tahara, Souichi Satomoto (Nagaoka Univ. Technol.)
 [more]
CPM 2012-10-26
13:25
Niigata   Electronic properties of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction -- Analysis using a two layer model --
Eichi Nagatomi, Naoya Yamaguchi, Tomohiko Takeuchi, Souichi Satomoto, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) CPM2012-93
Electrical properties of ZnO thin films, which were grown through a reaction between dimethylzinc and high-energy H_2O p... [more] CPM2012-93
pp.1-5
CPM 2012-10-26
13:50
Niigata   Effect of a low-temperature buffer layer on the properties of ZnO films grown on glass substrates using catalytically generated high-energy H2O
Takahiro Oyanagi, Kazuki Takezawa, Takahiro Kato (Nagaoka Univ. Technol), Hironori Katagiri, Kazuo Jimbo (NNCT), Kanji Yasui (Nagaoka Univ. Technol) CPM2012-94
ZnO thin films were grown through a reaction between dimethylzinc and high-energy H_{2}O produced by a Pt-catalyzed H_{2... [more] CPM2012-94
pp.7-11
CPM 2012-10-27
11:50
Niigata   Estimation of the number of junctions in the Bi-2212 stack by pulse current method
Takahiro Kato, Tsubasa Nishikata, Yukio Kotaki, Hisayuki Suematsu, Kanji Yasui (Nagaoka Univ. Tech), Akira Kawakami (NICT) CPM2012-110
 [more] CPM2012-110
pp.91-96
CPM 2012-10-27
12:15
Niigata   Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] CPM2012-111
pp.97-100
CPM 2012-08-08
13:50
Yamagata   Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato (Nagaoka Univ. Technol.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirsaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2012-35
 [more] CPM2012-35
pp.11-15
EMD, CPM, OME 2012-06-22
14:20
Tokyo Kikai-Shinko-Kaikan Bldg. Electronic properties of ZnO thin films grown on a-sapphire substrates using high-energy H2O generated by a catalytic reaction -- Analysis using a two layer model --
Eichi Nagatomi, Naoya Yamaguchi, Takahiro Kato (Nagaoka Univ. Technol.), Hironobu Umemoto (Shizuoka Univ.), Kanji Yasui (Nagaoka Univ. Technol.) EMD2012-9 CPM2012-26 OME2012-33
Electrical properties of ZnO thin films, which were grown through a reaction between dimethylzinc and high-energy $H_2O$... [more] EMD2012-9 CPM2012-26 OME2012-33
pp.7-11
EMD, CPM, OME 2012-06-22
14:45
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics of ZnO films grown on glass substrates using high-energy H2O generated by a catalytic reaction -- Effect of a sputter deposited buffer layer --
Takahiro Oyanagi, Souichi Satomoto, Kai Sato, Takahiro Kato (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Nat. College Technol.), Kanji Yasui (Nagaoka Univ. Technol.) EMD2012-10 CPM2012-27 OME2012-34
ZnO thin films were grown through a reaction between dimethylzinc and high-energy H_2O produced by a Pt-catalyzed H_2 O_... [more] EMD2012-10 CPM2012-27 OME2012-34
pp.13-18
CPM 2011-10-26
14:30
Fukui Fukui Univ. Investigation of THz-wave emission from the stacked intrinsic Josephson junctions in a Bi2Sr2CaCu2Ox single crystal
Takahiro Kato, Takeshi Asano, Satoru Sunaga (Nagaoka Univ. Tech1), Akira Kawakami (NICT), Kanji Yasui, Katsuyoshi Hamasaki (Nagaoka Univ. Tech1) CPM2011-112
 [more] CPM2011-112
pp.17-22
CPM 2011-08-10
14:15
Aomori   Photoluminescence characteristics of Ge, SiC nanodots capped by SiC layer
Takashi Otani, Yutaka Anezaki, Sho Asano, Ariyuki Kato (Nagaoka Univ. Technol.), Yuzuru Narita (Yamagata Univ.), Hideki Nakazawa (Hirosaki Univ.), Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) CPM2011-59
Ge and SiC nanodots were formed on Si(001) 3˚ off substrates after the formation of Si c(4x4) structure using monom... [more] CPM2011-59
pp.15-20
EMD, CPM, OME 2011-06-30
10:50
Tokyo   Electrical properties of ZnO films grown on sapphire substrates using high-energy H2O generated by a catalytic reaction
Souichi Satomoto, Masami Tahara, Hitoshi Miura, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) EMD2011-10 CPM2011-46 OME2011-24
(To be available after the conference date) [more] EMD2011-10 CPM2011-46 OME2011-24
pp.11-16
CPM, LQE, ED 2010-11-11
10:00
Osaka   Optical properties of ZnO films grown on sapphire substrates using high-energy H2O generated by a catalytic reaction
Hitoshi Miura, Takashi Otani, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagaoka Univ. Technol.) ED2010-142 CPM2010-108 LQE2010-98
 [more] ED2010-142 CPM2010-108 LQE2010-98
pp.1-6
CPM 2010-10-29
10:25
Nagano   Optimization of GaN film growth condition using pulse-mode hot-mesh CVD
Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102
Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gal... [more] CPM2010-102
pp.55-58
CPM 2010-07-29
14:55
Hokkaido Michino-Eki Shari Meeting Room Epitaxial growth of ZnO films using hot water molecules generated by catalytic reaction
Masami Tahara, Hitoshi Miura, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagoka Univ. of Tech.) CPM2010-33
We have developed a new CVD method for thin film growth of metal oxides using a reaction between organometallic compound... [more] CPM2010-33
pp.11-15
CPM 2009-10-30
09:00
Toyama Toyama Prefectural University Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model
Tomoyoshi Kuroda, Takashi Otani, Ariyuki Kato, Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-96
Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on Si(001) substrates using monomethy... [more] CPM2009-96
pp.31-36
 Results 21 - 40 of 55 [Previous]  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan