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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| WPT | 2023-11-10 14:50 |
Tokyo | Hachijomachi-Shokokai (Primary: On-site, Secondary: Online) |
[Invited Talk]
Sophomore Created Straight Radio Listens to Analog AM Wave Broadcast Takashi Ohira (TUT)  WPT2023-29 |
Wireless power transfer systems are going to range from kHz to MHz and even GHz frequencies. Toward the effective develo... [more] | WPT2023-29 p.32 |
| OME | 2023-11-01 15:10 |
Hyogo | JIBASAN Bidg. (Himeji) | [Invited Talk]
Thermal and non-thermal equilibrium process of charge carrier extraction in metal/insulator/organic Semiconductor/metal (MIOM) Junction Hiroyuki Tajima, Takeshi Oda (Univ. Hyogo), Tomofumi Kadoya (Konan Univ.) OME2023-47 |
This paper presents the concept and experimental evidence of the non-thermal equilibrium (NTE) process of charge-carrier... [more] | OME2023-47 pp.21-26 |
| SDM | 2023-10-13 17:00 |
Miyagi | Niche, Tohoku Univ. | A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech) SDM2023-61 |
LaBxNy insulator films are realized by utilizing Ar/N2 plasma reactive sputtering with nitrogen doped LaB6 as a target. ... [more] | SDM2023-61 pp.46-49 |
| OME | 2022-01-07 14:05 |
Osaka | CENTRAL ELECTRIC CLUB | Device characteristics of organic floating-gate memories based on n-channel polymer transistors Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48 |
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] | OME2021-48 pp.4-8 |
| CAS, ICTSSL | 2021-01-28 09:55 |
Online | Online | On differential equations and numerical approximations of a nonlinear field effect transistor for LSTM neural networks Zhihui He, Cheng Wang, Moyong Hong, Kazuya Ozawa, Kaito Isogai, Hideaki Okazaki (Shonan Inst. Tech) CAS2020-39 ICTSSL2020-24 |
In this report，we discuss how to build differential equations and numerical approximations of a nonlinear field effect t... [more] | CAS2020-39 ICTSSL2020-24 pp.7-10 |
| SDM | 2019-11-08 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74 |
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] | SDM2019-74 pp.27-32 |
| SDM, ICD, ITE-IST [detail] | 2019-08-07 14:15 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST) SDM2019-37 ICD2019-2 |
Layered transition metal dichalcogenides (TMDCs) have attracted much attention as promising 2D channel materials which ... [more] |
SDM2019-37 ICD2019-2 pp.7-10 |
| SDM | 2018-11-09 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74 |
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] | SDM2018-74 pp.47-52 |
| SDM | 2018-06-25 14:00 |
Aichi | Nagoya Univ. VBL3F | [Invited Lecture]
Progress in Diamond Field Effect Transistors Hiroshi Kawarada, Nobutaka Oi, Bi Te, Shoichiro Imanishi, Masayuki Iwatakaki, Taichi Yabe, Atsushi Hiraiwa (Waseda Univ.) SDM2018-21 |
2 dimensional hole gas at diamond and insulator interface is used for field effect transistor (FET). High voltage (~2000... [more] | SDM2018-21 pp.23-28 |
| CPSY, DC, IPSJ-ARC (Joint) [detail] |
2017-07-26 16:15 |
Akita | Akita Atorion-Building (Akita) | A Two-Temperature-Point Calibration Method for A Digital Temperature And Voltage Sensor Yousuke Miyake, Yasuo Sato, Seiji kajihara (KIT) DC2017-19 |
A measurement method of a digital sensor using ring oscillators to measure a temperature and a voltage of a VLSI was pro... [more] | DC2017-19 pp.19-24 |
| SDM | 2017-01-30 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130 |
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] | SDM2016-130 pp.1-4 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Development of a flexible differential amplifier using p-type organic transistors Masahiro Sugiyama, Takahumi Uemura, Shusuke Yoshimoto, Mihoko Akiyama, Teppei Araki, Tsuyoshi Sekitani (Osaka Univ.) ICD2016-78 CPSY2016-84 |
(To be available after the conference date) [more] | ICD2016-78 CPSY2016-84 p.83 |
| SDM | 2016-06-29 15:25 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Application of layered chalcogenide materials to field effect transistor devices Keiji Ueno (Saitama Univ.) SDM2016-43 |
While intensive studies are reported about many interesting properties of graphene, other layered materials having simil... [more] | SDM2016-43 pp.59-64 |
| SDM | 2016-06-29 16:20 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET Takamasa Kawanago, Shunri Oda (Tokyo Tech.) SDM2016-45 |
In this study, self-assembled-monolayer (SAM)-based gate dielectrics is applied to the fabrication of molybdenum disulfi... [more] | SDM2016-45 pp.69-74 |
| SDM | 2016-01-28 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Van der Waals Junctions of Layered 2D Materials for Functional Devices Tomoki Machida, Rai Moritani, Yohta Sata, Takehiro Yamaguchi, Miho Arai, Naoto Yabuki, Sei Morikawa, Satoru Masubuchi (Univ. of Tokyo), Keiji Ueno (Saitama Univ.) SDM2015-123 |
Recent advances in transfer techniques of atomic layers have enabled one to fabricate van der Waals junctions of two-dim... [more] | SDM2015-123 pp.13-16 |
| ED | 2016-01-20 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
State-of-the-art technology of gallium oxide power devices Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114 |
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] | ED2015-114 pp.13-18 |
| SDM | 2015-11-06 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Simulation of Dirac Electron Engineering Device Using Strained Graphene Satofumi Souma, Miku Tanaka, Keisuke Ichihara, Shotaro Sakoda, Kenji Sasaoka, Matsuto Ogawa (Kobe Univ.) SDM2015-89 |
MOSFET has been scaled down according to the Moore's law. As the channel length gets close to the nanometer-size, howeve... [more] | SDM2015-89 pp.29-34 |
| OME | 2015-10-23 15:50 |
Osaka | Osaka Univ. Nakanoshima Center | Fabrication of OFETs using mixed solvent for high mobility and low threshold voltage Ryosuke Nakamichi, Takashi Nagase, Takashi Kobayashi (Osaka Pref. Univ.), Yuichi Sadamitsu (Nippon Kayaku Co., Ltd.), Hiroyoshi Naito (Osaka Pref. Univ.) OME2015-58 |
It is important to develop methods of controlling electrical characteristics of organic field-effect transistor (OFET). ... [more] | OME2015-58 pp.43-46 |
| ED, CPM, SDM | 2015-05-28 17:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26 |
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] | ED2015-24 CPM2015-9 SDM2015-26 pp.41-44 |
| ED | 2014-12-22 15:00 |
Miyagi | Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] | ED2014-102 pp.21-26 |
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