| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-10-13 15:10 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
statistical analysis of random telegraphic noise dependence on operating condition using electrical characteristic measurement platform Takezo Mawaki, Rihito Kuroda (Tohoku Univ.)  SDM2023-57 |
We refer to the overall measurement system composed of array test circuits and other equipment as the electrical charact... [more] | SDM2023-57 pp.21-26 |
| MW | 2023-03-02 13:00 |
Tottori | Tottori Univ. (Primary: On-site, Secondary: Online) |
A 1.6-2.2 GHz Band GaN HEMT Continuous Class-B/J Power Amplifier with Drain Efficiency Over 70% Soushi Aonuma, Shinichi Tanaka (Shibaura Inst. of Tech.) MW2022-162 |
A continuous Class-B/J amplifier can theoretically maintain the 78.5 % power efficiency of a Class-B amplifier over a wi... [more] | MW2022-162 pp.31-36 |
| MW | 2023-03-02 14:55 |
Tottori | Tottori Univ. (Primary: On-site, Secondary: Online) |
Microwave-DC Interconversion Using a Negative Resistance Oscillator with an FET Kansei Maeda, Daiki Kiyama, Minoru Sanagi (Okayama Univ.) MW2022-166 |
When a packaged FET is operated in a common-drain mode, the negative resistance at the gate terminal is exhibited withou... [more] | MW2022-166 pp.54-59 |
| SDM | 2020-10-22 15:50 |
Online | Online | Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-21 |
In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shap... [more] | SDM2020-21 pp.34-39 |
| EMD, R | 2019-02-15 14:55 |
Osaka | [Invited Talk]
SPICE based circuit performance degradation simulation with MOSFET aging models Koji Tanaka, Shinichiro Amemiya, Hitoshi Okamura, Masanori Shimasue (MoDeCH) R2018-56 EMD2018-57 |
Now, semiconductor products are used in many high reliability products such as vehicle parts and medical equipment. Natu... [more] | R2018-56 EMD2018-57 pp.25-30 |
|
| ED, THz | 2017-12-19 09:40 |
Miyagi | RIEC, Tohoku Univ | Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82 |
We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics... [more] | ED2017-82 pp.37-40 |
| SDM, ICD, ITE-IST [detail] | 2017-07-31 12:00 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | TCAD Simulation of C-TFET Circuit with Drain Offset Structure Hidehiro Asai, Takahiro Mori, Junich Hattori, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa (AIST) SDM2017-35 ICD2017-23 |
We have performed TCAD simulation for a ring oscillator composed of complementary Tunnel Field Effect Transistors (C-TFE... [more] | SDM2017-35 ICD2017-23 pp.21-24 |
| MW, ED | 2017-01-27 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184 |
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] | ED2016-108 MW2016-184 pp.63-68 |
| ED | 2016-12-19 14:40 |
Miyagi | RIEC, Tohoku Univ | Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain... [more] | ED2016-81 pp.7-12 |
| ED | 2016-01-20 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Improvement in fmax of InP-based HEMTs for THz ICs Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118 |
High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] | ED2015-118 pp.37-41 |
| SDM | 2015-06-19 14:15 |
Aichi | VBL, Nagoya Univ. | Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48 |
Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] | SDM2015-48 pp.51-55 |
| EE, CPM | 2014-02-27 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | On switching characteristics and equivalent circuit of SiC-BGSIT device Yukitaka I, Akihumi Ogawa, Tetsuro Tanaka (Kagoshima Univ.) EE2013-56 CPM2013-157 |
The objective of this report is to experimentally investigate the occurrence conditions of false operation caused by the... [more] | EE2013-56 CPM2013-157 pp.43-48 |
| SDM | 2014-01-29 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138 |
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and re... [more] | SDM2013-138 pp.13-16 |
| ED | 2013-12-16 13:55 |
Miyagi | Research Institute of Electrical Communication Tohoku University | Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92 |
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] | ED2013-92 pp.13-17 |
| ED | 2013-12-16 14:20 |
Miyagi | Research Institute of Electrical Communication Tohoku University | An F-band Fundamental Mixer Using InP HEMTs for Precise Spectrum Analysis Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-93 |
A broadband, single fundamental mixer is developed by using InP HEMT technology for use in precise spectrum analysis at ... [more] | ED2013-93 pp.19-23 |
| SDM | 2013-11-15 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111 |
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] | SDM2013-111 pp.65-70 |
| EMCJ, IEE-EMC, MW, EST [detail] | 2013-10-24 13:50 |
Miyagi | Tohoku Univ. | Efficiency improvement of transmitter for mobile phone base station using outphasing amplifier Shigekazu Kimura, Ken Tamanoi, Toru Maniwa, Takeshi Takano (Fujitsu Labs.) EMCJ2013-69 MW2013-109 EST2013-61 |
In recent years, due to the increase of data traffic, there has been a constant rise in the number of mobile phone base ... [more] | EMCJ2013-69 MW2013-109 EST2013-61 pp.53-58 |
| SDM | 2013-06-18 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2013-49 |
Metal source/drain (S/D) with extremely low parasitic resistance is needed for high performance Ge CMOS. We found that H... [more] | SDM2013-49 pp.29-32 |
| MW, ED | 2013-01-18 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of drain leakage current in AlGaN/GaN HEMT Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155 |
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] | ED2012-125 MW2012-155 pp.69-74 |
| MW | 2012-12-13 14:00 |
Yamanashi | Univ. of Yamanashi | A study on application of Class-E amplifier to EPWM transmitter Naoki Oyama, Makoto Taromaru (Fukuoka Univ.) MW2012-128 |
The PAE of Class-E/F such as switching-mode amplifiers is superior, but it is nonlinear. EPWM is one of the architectu... [more] |
MW2012-128 pp.7-12 |
[Return to Top Page]