Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2023-11-09 13:10 |
Tokyo |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Overview of advanced logic devices and their enablement process technologies Tomonari Yamamoto (TEL) SDM2023-64 |
[more] |
SDM2023-64 pp.8-9 |
IMQ, IE, MVE, CQ (Joint) [detail] |
2023-03-17 10:45 |
Okinawa |
Okinawaken Seinenkaikan (Naha-shi) (Primary: On-site, Secondary: Online) |
Wiped-Rate Estimation for Semiconductor Manufacturing Using DNN Based on 3D Body Tracking Takehiro Nagata (Univ. of Tsukuba), Li-Wei Cheng (NCKU), Hidehiko Shishido (Univ. of Tsukuba), Hyejin Kim, Chanya Mahapun, Naoki Yoshii, Tsuyoshi Moriya (TEL), Itaru Kitahara (Univ. of Tsukuba) IMQ2022-67 IE2022-144 MVE2022-97 |
This research presents a method to calculate the corresponding wiped rate from upper body wiping movements to determine ... [more] |
IMQ2022-67 IE2022-144 MVE2022-97 pp.235-240 |
SDM |
2023-02-07 11:25 |
Tokyo |
Tokyo Univ. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Advanced process technologies for continuous logic scaling towards 2nm node and beyond Tomonari Yamamoto (TEL) SDM2022-87 |
[more] |
SDM2022-87 pp.9-12 |
SDM |
2022-02-04 09:45 |
Online |
Online |
[Invited Talk]
Advanced Damascene Integration with Self Assembled Monolayer (SAM) Hiroyuki Nagai, Mitsuaki Iwashita, Yuki Kikuchi (TEL), Kawasaki Hiroaki, Gyana Pattanaik (TTCA), Keiichi Fujita (TKL), Kazutoshi Iwai (TEA), Hiroyuki Komatsu, Yuuki Ozaki (JSR) SDM2021-75 |
Selective deposition of Cu diffusion barrier metal layer on dielectric with Self-Assembled Monolayer (SAM) has been demo... [more] |
SDM2021-75 pp.5-8 |
SDM |
2021-06-22 13:10 |
Online |
Online |
[Memorial Lecture]
Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) SDM2021-22 |
The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] |
SDM2021-22 pp.1-6 |
SDM |
2020-10-22 10:00 |
Online |
Online |
[Memorial Lecture]
Atomic layer controlled etching process using plasma Sho Kumakura (Tokyo Electron Miyagi) SDM2020-14 |
[more] |
SDM2020-14 pp.1-6 |
SDM |
2020-10-22 14:50 |
Online |
Online |
Modification of states of copper and copper oxide due to IPA treatment Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-19 |
The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] |
SDM2020-19 pp.25-29 |
SDM |
2020-02-07 11:20 |
Tokyo |
Tokyo University-Hongo |
[Invited Talk]
Novel Volatile Film for Precise Dual Damascene Fabrication Makoto Fujikawa, Tatsuya Yamaguchi (TTS), Yuki Kikuchi, Kaoru Maekawa (TTCA), Hiroaki Kawasaki, Yoji Iizuka (TEL) SDM2019-92 |
Abstract— Plasma induced damage on porous low-k dielectrics is a critical issue to lower the interconnect RC delay in th... [more] |
SDM2019-92 pp.21-23 |
SDM |
2019-10-23 13:30 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
Atomic layer etching process utilizing plasma Sho Kumakura, Yoshihide Kihara, Masanobu Honda (Tokyo Electron Miyagi) SDM2019-53 |
(To be available after the conference date) [more] |
SDM2019-53 pp.1-6 |
SDM |
2019-02-07 10:05 |
Tokyo |
|
[Invited Talk]
High-precision Dual Damascene Fabrication Technique Takashi Hayakawa, Makoto, Syuji Nozawa, Tatsuya Yamaguchi (TEL) |
[more] |
|
SDM |
2017-02-06 11:15 |
Tokyo |
Tokyo Univ. |
[Invited Talk]
NiGe/Ge contact formation by microwave annealing method for low-thermal budget processing Osamu Nakatsuka (Grad. Sch. of Eng., Nagoya University), Yoshimasa Watanabe (TEL), Akihiro Suzuki (Grad. Sch. of Eng., Nagoya University), Yoshio Nishi (Dept. of Electrical Engineering, Stanford University), Shigeaki Zaima (IMaSS, Nagoya University) SDM2016-141 |
[more] |
SDM2016-141 pp.11-15 |
SDM |
2016-10-26 14:50 |
Miyagi |
Niche, Tohoku Univ. |
Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa (Tohoku Univ.), Daisuke Suzuki, Yoichiro Chiba, Katsutoshi Ishii, Akira Shimizu, Kazuhide Hasebe (Tokyo Electron Tohoku) SDM2016-70 |
[more] |
SDM2016-70 pp.9-14 |
SDM |
2015-10-30 09:30 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures Hirokazu Ueda (TEL TDC), Peter Ventzek (TEL America), Masahiro Oka, Yuuki Kobayashi, Yasuhiro Sugimoto, Satoru Kawakami (TEL TDC) SDM2015-76 |
Conformal plasma doping for topographic structures was achieved using microwave plasmas with low temperature annealing. ... [more] |
SDM2015-76 pp.29-33 |
SDM |
2014-02-28 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Large-Radius Neutral Beam Enhanced Chemical Vapor Deposition Process for Non-Porous Ultra-low-k SiOCH Yoshiyuki Kikuchi (Tokyo Electron/Tohoku Univ.), Seiji Samukawa (Tohoku Univ.) SDM2013-165 |
[more] |
SDM2013-165 pp.1-5 |
SDM |
2013-06-18 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Implementation of High-k Gate Dielectrics in SiC Power MOSFET Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-59 |
[more] |
SDM2013-59 pp.77-80 |
EMCJ (2nd) |
2012-11-30 13:50 |
Tokyo |
NICT |
Transient voltage measurement on a PC Board exposed by a small gap spark discharge Satoshi Isofuku (TET), Masamitsu Honda (IPL) |
[more] |
|
SAT |
2011-12-12 15:45 |
Aichi |
Nagoya University |
Evaluation of Sub-meter Class Augmentation System by L1-SAIF+ and the Summary of Demonstration Experiments with "MICHIBIKI" Ryo Iwama (SPAC), Hiroshi Soga, Kimikazu Odagawa (NEC), Yasuhiro Masuda, Tomoya Osawa, Akira Ito, Mitsuhiro Matsumoto (TECS) SAT2011-50 |
"MICHIBIKI" (QZS-1), launched on 2010, is broadcasting L1-SAIF (sub-meter class augmentation with integrity function) si... [more] |
SAT2011-50 pp.71-76 |
ISEC, IPSJ-CSEC, SITE, ICSS, EMM, IPSJ-SPT [detail] |
2011-07-13 13:50 |
Shizuoka |
Shizuoka University |
Memory saving implementation of Cyclic Vector Multiplication Algorithm Ryosuke Takahashi, Kenta Nekado, Yusuke Takai, Yasuyuki Nogami, Hiroto Kagotani (Okayama Univ.), Takashi Narita (TEL) ISEC2011-25 SITE2011-22 ICSS2011-30 EMM2011-24 |
The authors have proposed a cyclic vector multiplication algorithm abbreviated as CVMA
that is flexible to the paramet... [more] |
ISEC2011-25 SITE2011-22 ICSS2011-30 EMM2011-24 pp.145-150 |
SDM |
2007-10-04 15:15 |
Miyagi |
Tohoku Univ. |
Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM Shigemi Murakawa (Tokyo Electron/Tohoku Univ.), Masashi Takeuchi, Minoru Honda, Shu-ichi Ishizuka, Toshio Nakanishi, Yoshihiro Hirota, Takuya Sugawara, Yoshitsugu Tanaka, Yasushi Akasaka (Tokyo Electron AT), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2007-175 |
Nitrogen profile variations were systematically studied for the DRAM plasma nitridation process, using AR-XPS, and their... [more] |
SDM2007-175 pp.11-14 |
SDM |
2007-10-05 10:55 |
Miyagi |
Tohoku Univ. |
The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Low-k Copper Barrier Film Hiraku Ishikawa (Tokyo Electron/Tohoku Univ.), Toshihisa Nozawa, Takaaki Matsuoka (Tokyo Electron Technology Development Institute), Akinobu Teramoto, Masaki Hirayama, Takashi Ito, Tadahiro Ohmi (Tohoku Univ.) SDM2007-183 |
In recent ULSI, Cu wiring and low-k dielectrics are used to reduce RC delay in interconnect. In order to increase operat... [more] |
SDM2007-183 pp.31-34 |