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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-01-28 15:35 |
Online | Online | [Invited Talk]
Evaluation of Defects in Si Substrates Introduced by Stochastic Lateral Straggling during Plasma Exposure and Its Impact on Ultra-low Leakage Devices Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.)  SDM2020-53 |
In the design of ultra-low leakage devices such as image sensors, it is critical to understand the distribution of an ex... [more] | SDM2020-53 pp.17-20 |
| LQE, OPE, CPM, EMD, R | 2019-08-22 16:45 |
Miyagi | [Invited Talk]
3D Flash Memory Cell Reliability Yuichiro Mitani, Harumi Seki, Takanori Asano, Yasushi Nakasaki (Toshiba Memory) R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 |
As conventional planar NAND flash memories are limited from physical and electrical scaling point of view, the three-dim... [more] | R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 pp.35-38 |
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| ED, SDM | 2018-02-28 17:05 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping on silicon-on-insulator devices Tokinobu Watanabe (Univ. Toyama), Masahiro Hori, Yukinori Ono (Shizuoka Univ.) ED2017-115 SDM2017-115 |
The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 – 300 K . We found that The CP current measured below 10... [more] | ED2017-115 SDM2017-115 pp.51-56 |
| SDM | 2017-10-25 14:50 |
Miyagi | Niche, Tohoku Univ. | Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ) SDM2017-51 |
Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size... [more] | SDM2017-51 pp.9-14 |
| SDM | 2016-11-11 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Application of DFT Calculation for the Development of High Quality Si and Ge Substrates
-- From Ultra Large Diameter Crystal Pulling to Metal Gettering -- Koji Sueoka (Okayama Pref. Univ.) SDM2016-87 |
During the last decade, considerable progress has been made in understanding the properties and behavior of the vacancy ... [more] | SDM2016-87 pp.49-54 |
| ED, SDM | 2016-03-03 16:20 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping for SiO2/Si interface states Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama) ED2015-125 SDM2015-132 |
The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibi... [more] | ED2015-125 SDM2015-132 pp.23-26 |
| SDM | 2015-06-19 14:55 |
Aichi | VBL, Nagoya Univ. | Effect of annealing on defects in Ge1-xSnx epitaxial layers Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50 |
In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control def... [more] | SDM2015-50 pp.63-68 |
| SDM | 2014-11-07 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) SDM2014-104 |
For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal s... [more] | SDM2014-104 pp.47-52 |
| SCE | 2014-10-15 13:15 |
Miyagi | Tohoku University, RIEC | Evaluation of tunnel barrier defects in Nb/AlOx/Nb Josephson junctions using large area junctions Mutsuo Hidaka, Shuichi Nagasawa, Tetsuro Satoh, Kenji, Hinode (AIST) SCE2014-34 |
Defects in almost all Nb/AlOx/Nb Josephson junctions (JJ) which are used in superconducting integrated circuits are leak... [more] | SCE2014-34 pp.1-6 |
| SDM | 2014-06-19 10:30 |
Aichi | VBL, Nagoya Univ. | Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] | SDM2014-46 pp.17-20 |
| CPM, ED, SDM | 2014-05-29 14:20 |
Aichi | Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39 |
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] | ED2014-41 CPM2014-24 SDM2014-39 pp.113-118 |
|
| SDM | 2013-06-18 17:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] | SDM2013-64 pp.101-105 |
| LQE, ED, CPM | 2011-11-17 12:55 |
Kyoto | Katsura Hall，Kyoto Univ. | Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) ED2011-77 CPM2011-126 LQE2011-100 |
In the growth of freestanding GaN substrates using our void-assisted separation (VAS) method, we have effectively suppre... [more] | ED2011-77 CPM2011-126 LQE2011-100 pp.19-24 |
| SDM | 2011-10-21 14:50 |
Miyagi | Tohoku Univ. (Niche) | Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching Yoshinori Nakakubo, Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-111 |
We present analysis techniques for plasma process-induced damage in the Si substrate. The techniques are based on the el... [more] | SDM2011-111 pp.79-84 |
| SDM | 2011-07-04 11:40 |
Aichi | VBL, Nagoya Univ. | Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57 |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] | SDM2011-57 pp.41-46 |
| SDM | 2010-12-17 12:00 |
Kyoto | Kyoto Univ. (Katsura) | Effect of H2-N2 Plasma Exposure on Nanostructured Silicon Akitsugu Watanabe, Kenichi Suda, Hideki Nakada, Mitsuya Motohashi (Tokyo Denki Univ.) SDM2010-191 |
In this study, we researched the effect of H2-N2 plasma exposure on nanostructured silicon. The plasma treatment to the ... [more] | SDM2010-191 pp.33-37 |
| SDM, OME | 2010-04-23 13:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Influence of Grain Size on Gate Voltage Swing and Threshold Voltage of Poly-Si Thin Film Transistor Fumiaki Oshiro, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Tadashi Ohachi (Doshisha Univ.) SDM2010-7 OME2010-7 |
A model of defects in poly-Si film by using grain size was proposed. The gate voltage swing factor S which related to th... [more] | SDM2010-7 OME2010-7 pp.29-32 |
| DC | 2010-02-15 13:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Reduction of execution times and areas for delay measurement by subtraction Toru Tanabe, Hirohisa Minato, Kentaroh Katoh, Kazuteru Namba, Hideo Ito (Chiba Univ.) DC2009-71 |
Since VLSI is in nanoscase size, high density and high speed in recent years, small-delay defects which change propagati... [more] | DC2009-71 pp.39-44 |
| SDM | 2010-02-05 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Advanced Direct-CMP Process for Porous Low-k Thin Film Hayato Korogi (Panasonic), Hiroyuki Chibahara (Renesas), S. Suzuki, M. Tsutsue (Panasonic), K. Seo (Panasonic Semiconductor Engineering), Y. Oka, K. Goto, M. Akazaw, Hiroshi Miyatake (Renesas), S. Matsumoto, T. Ueda (Panasonic) SDM2009-185 |
In order to reduce the effective dielectric constant (keff) for the 32 nm technology node and beyond, Direct-CMP of a po... [more] | SDM2009-185 pp.19-23 |
| SDM | 2009-12-04 10:00 |
Nara | NAIST | Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) SDM2009-153 |
In Al-doped 6H-SiC epilayers irradiated with electrons, the densities and energy levels of acceptor and hole traps were ... [more] | SDM2009-153 pp.11-16 |
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