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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME, IEE-DEI | 2021-03-01 13:30 |
Online | Online | [Invited Talk]
Trend for Research and Development on Pb-free Sn-perovskite solar cells Shuzi Hayase (UEC)  OME2020-19 |
Certified efficiency of the solar cells consisting of conventional Pb perovskite as the light harvesting layer reached 2... [more] | OME2020-19 pp.1-3 |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 11:25 |
Online | Online | Gate-all-around p-type poly-Si junctionless nanowire transistor with steep subthreshold slope Min-Ju Ahn, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (IIS, Tokyo Univ.) SDM2020-9 ICD2020-9 |
In this work, GAA p-type junctionless nanowire transistor with BF2+ implanted poly-Si channel have been fabricated and e... [more] | SDM2020-9 ICD2020-9 pp.41-46 |
| PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] | 2019-01-17 16:20 |
Osaka | Osaka University Nakanoshima Center | Surface Improvement Investigation of Sol-Gel SiO2 Cladding for Waveguide Device Passivation Satoshi Ogawa, Ahmad Syahrin Idris, Yu Han, Haisong Jiang, Kiichi Hamamoto (Kyushu Univ.) PN2018-53 EMT2018-87 OPE2018-162 LQE2018-172 EST2018-100 MWP2018-71 |
For exploiting sol-gel SiO2 for waveguide device passivation, plasma-ashing, in addition to 700 ℃ annealing, is proposed... [more] | PN2018-53 EMT2018-87 OPE2018-162 LQE2018-172 EST2018-100 MWP2018-71 pp.127-130 |
| CPM | 2018-08-10 11:25 |
Aomori | Hirosaki Univ. | Surface composition and chemical bond structure of Zr-based metallic glass Haruto Koriyama, Keisuke Fujimori, Yoshiharu Enta (Hirosaki Univ.), Nozomu Togashi (Adamant Namiki Precision Jewel) CPM2018-19 |
It has been reported that the Zr-based bulk metallic glass alloy commonly known as Vit 105 (Zr_{52.5}Cu_{17.9}Ni_{14.6}A... [more] | CPM2018-19 pp.53-56 |
| ED, LQE, CPM | 2015-11-27 14:35 |
Osaka | Osaka City University Media Center | Improved Properties in InGaN-based Solar Cells by surface passivation process. Kabata, Tsutsumi Tatsuya, Miyoshi Makoto, Egawa Takashi (Nagoya Inst of Tech) ED2015-87 CPM2015-122 LQE2015-119 |
InGaN alloys are now viewed as promising material for solar cell applications due to their direct and variable band gaps... [more] | ED2015-87 CPM2015-122 LQE2015-119 pp.95-99 |
| SDM | 2015-06-19 13:40 |
Aichi | VBL, Nagoya Univ. | Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2015-47 |
The fabrication of PtGe/Ge contacts with low hole barrier height (ΦBP) and its electrical passivation were investigated.... [more] | SDM2015-47 pp.47-50 |
| OME, SDM | 2015-04-29 17:05 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang (Kochi Univ. of Tech.) SDM2015-8 OME2015-8 |
Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been inv... [more] | SDM2015-8 OME2015-8 pp.31-34 |
| CPM, ED, SDM | 2014-05-28 16:30 |
Aichi | Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma and Electron Device Application Kyohei Kawakami, Takahiro Ishimaru, Masatoshi Shinohara, Hiroshi Okada (Toyohashi Tech), Masakzu Furukawa (Aries Research Group), Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech) ED2014-29 CPM2014-12 SDM2014-27 |
New chemical vapor deposition technique using surface-wave plasma is proposed, and silicon nitride film deposition is ma... [more] | ED2014-29 CPM2014-12 SDM2014-27 pp.55-58 |
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| ED, SDM | 2014-02-27 14:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Fabrication and characterization of n-type carbon nanotube thin film transistors on plastic film Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2013-134 SDM2013-149 |
We realized high mobility n-type carbon nanotube thin-film transistors on a plastic film using the transfer process and ... [more] | ED2013-134 SDM2013-149 pp.13-18 |
| ED, LQE, CPM | 2012-11-29 16:15 |
Osaka | Osaka City University | Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2012-76 CPM2012-133 LQE2012-104 |
AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed... [more] | ED2012-76 CPM2012-133 LQE2012-104 pp.45-50 |
| OME | 2008-10-31 13:00 |
Tokyo | ToKyo Univ. Faculty of Engineering Bldg.6 | Fabrication of P3HT Field Effect Transistor Using Organic Insulating Materials by Solution Process Kosuke Narita, Hiroshi Yamauchi, Masaaki Iizuka, Shigekazu Kuniyoshi, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2008-50 |
In this work, the evaluation of gate insulating materials for organic field effect transistor (OFET) and improvement of ... [more] | OME2008-50 pp.1-4 |
| CPM | 2008-08-04 14:00 |
Hokkaido | Muroran Institute of Technology | Development of Surface-Wave Plasma Generation Apparatus and Application to Semiconductor Processing Hisashi Fukuda (Muroran Inst. Technol.), Masakazu Furukawa (ARIC) CPM2008-41 |
We have developed a high-density surface-wave plasma apparatus for the application to next generation semiconductor fabr... [more] | CPM2008-41 pp.1-4 |
| SDM, ED | 2008-07-11 14:50 |
Hokkaido | Kaderu２・７ | AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124 |
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] | ED2008-105 SDM2008-124 pp.341-345 |
| ED | 2008-06-13 13:00 |
Ishikawa | Kanazawa University | Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) ED2008-22 |
By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of A... [more] | ED2008-22 pp.1-4 |
| ED | 2008-06-13 14:40 |
Ishikawa | Kanazawa University | Reliability evaluation of MOCVD-grown InP/InGaAs HBTs Keita Ogisu, Yoshihiro Fukushima, Kenji Shiojima (Fukui Univ.), Gkou Araki, Hideo Yokohama (NTT-AT) ED2008-26 |
We examined to reduce hydrogen atom concentration in a p-type InGaAs base layer by using ethyl based precursors （TMI,TMG... [more] | ED2008-26 pp.23-28 |
| ED, MW | 2008-01-17 11:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement in reliability of InGaP/GaAs HBT's by ledge passivation Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148 |
Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] | ED2007-217 MW2007-148 pp.61-66 |
| SDM | 2007-12-14 15:10 |
Nara | Nara Institute Science and Technology | Interface modification by NH3 plasma in SiNx passivation for solar cell Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-232 |
The effect of NH3 plasma treatment on p-type (Fz) Si substrates was investigated relating with the post annealing proces... [more] | SDM2007-232 pp.43-46 |
| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
High-performance and reliable InP/InGaAs HBTs operating at high current density Shoji Yamahata, Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai (NTT), Yasuyuki Miyamoto (TOKYO TECH) |
This paper describes the high-performance and reliability of scaled InP/InGaAs HBTs with a passivation ledge structure a... [more] | |
| ED | 2007-06-16 10:35 |
Toyama | Toyama Univ. | Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST) ED2007-43 |
We have investigated AlN surface passivation for AlGaN/GaN heterojunction field-effect transistors (HFETs). After the ... [more] | ED2007-43 pp.67-70 |
| SDM | 2007-06-08 10:55 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2 Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Masamichi Suzuki, Daisuke Matsushita, Masahiko Yoshiki, Mitsuhiro Tomita, Takeshi Yamaguchi, Masato Koyama, Noburu Fukushima (Toshiba) SDM2007-43 |
By controlling atomic arrangement of La aluminates (LAO, EOT scalable below 0.5 nm)/Si interface with a newly developed ... [more] | SDM2007-43 pp.65-70 |
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