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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-10-21 16:00 |
Online | Online | Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)  SDM2021-51 |
A current measurement platform to measure current across dielectrics with a high precision of $10^{-17}$ A applied for s... [more] | SDM2021-51 pp.23-26 |
| OME, IEE-DEI | 2021-03-02 09:40 |
Online | Online | [Invited Lecture]
Analysis of OLEDs using delayed luminescence method Noriyuki Takada, Hajime Okumoto (AIST) OME2020-26 |
By applying the delayed emission method to the Alq3 organic EL device, we succeeded in measuring the emission spectrum w... [more] | OME2020-26 pp.28-30 |
| LQE, OPE, CPM, EMD, R | 2019-08-22 16:45 |
Miyagi | [Invited Talk]
3D Flash Memory Cell Reliability Yuichiro Mitani, Harumi Seki, Takanori Asano, Yasushi Nakasaki (Toshiba Memory) R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 |
As conventional planar NAND flash memories are limited from physical and electrical scaling point of view, the three-dim... [more] | R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 pp.35-38 |
|
| SDM | 2017-11-09 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
GaN MOS capacitance simulation considering deep traps Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66 |
Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] | SDM2017-66 pp.27-32 |
| SDM | 2016-11-11 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] | SDM2016-86 pp.43-47 |
| SDM | 2015-06-19 09:50 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy Yutaka Tokuda (Aich Inst. of Technol.) SDM2015-39 |
Capacitance transient spectroscopy based on the depletion layer capacitance transients resulting from carrier emission f... [more] | SDM2015-39 pp.5-10 |
| DC | 2015-06-16 15:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Study on Function Test of Latch-based Asynchronous Pipeline Circuits Daiki Toyoshima, Kyohei Terayama, Atsushi Kurokawa, Masashi Imai (Hirosaki Univ.) DC2015-19 |
Asynchronous MOUSETRAP pipeline circuit is a simple and fast circuit thanks to the 2-phase handshaking protocol which ha... [more] | DC2015-19 pp.19-24 |
| SDM | 2014-06-19 13:45 |
Aichi | VBL, Nagoya Univ. | Atomistic study of Nitrogen and Hydrogen incorporation effect in Si-rich SiO2 Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba), Katsumasa Kamiya (KAIT), Kenji Shiraishi (Nagoya Univ.) SDM2014-52 |
Charge trapping memories such as the MONOS (Metal-Oxide-Nitride-Oxide-Semiconductor) type memories naturally have the ch... [more] | SDM2014-52 pp.49-53 |
| SCE | 2013-01-24 13:35 |
Okayama | Okayama Univ. | Development of HTS-SQUID hybrid magnetometer Akira Tsukamoto, Seiji Adachi, Yasuo Oshikubo, Tsunehiro Hato, Keiichi Tanabe (ISTEC-SRL) SCE2012-33 |
To improve the field resolution of a magnetometer for use in the Earth’s field, we have developed a new magnetometer usi... [more] | SCE2012-33 pp.49-52 |
| SDM | 2012-12-07 11:30 |
Kyoto | Kyoto Univ. (Katsura) | Study of carrier behavior in memory transistor using DNA Shoko Maeno, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ. of Hyogo) SDM2012-121 |
We produced electrodes with a gap of about 100nm by using the substrate Si, DNA was fixed between the electrodes, and it... [more] | SDM2012-121 pp.37-40 |
| SDM | 2012-10-26 09:30 |
Miyagi | Tohoku Univ. (Niche) | Noise Performance of Accumulation MOSFETs Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-92 |
Whether the use of a different material such as the germanium or the use of a new structure such as multigate device for... [more] | SDM2012-92 pp.15-20 |
| EID, ITE-IDY, IEE-EDD, IEIJ-SSL | 2011-01-28 13:45 |
Kochi | Kochi University of Technology | Characterization of Ba3Si6O12N2:Eu2+ Phosphor by Photo- and Thermoluminescence Ryo Ishioka, Kouhei Igarashi, Takeshi Fukuda (Saitama Univ.), Naoto Kijima (Mitsubishi Chemical), Norihiko Kamata (Saitama Univ.) EID2010-28 |
Optical characterization of Ba3Si6O12N2:Eu2+ (BSON) phosphor was carried out based on an internal quantum efficiency, ph... [more] | EID2010-28 pp.25-28 |
| ED, SDM | 2010-06-30 14:55 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2010-57 SDM2010-58 |
Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt electrodes has b... [more] |
ED2010-57 SDM2010-58 pp.31-36 |
| ED, MW | 2010-01-14 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-186 MW2009-169 |
Analysis of transient response of HfO2/AlGaN/GaN MOSFETs was performed by using the two-dimensional device simulation to... [more] | ED2009-186 MW2009-169 pp.65-70 |
| SDM | 2009-10-29 17:15 |
Miyagi | Tohoku University | Statistical Analysis of Random Telegraph Signal Using a Large-Scale Array TEG with a Long Time Measurement Takafumi Fujisawa, Kenichi Abe, Syunichi Watabe, Naoto Miyamoto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2009-123 |
For the development of miniaturizing MOSFET and manufacturing low noise devices, it is important to suppress RTS noise. ... [more] | SDM2009-123 pp.31-36 |
| CPM, ED, LQE | 2007-10-12 10:50 |
Fukui | Fukui Univ. | Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-169 CPM2007-95 LQE2007-70 |
Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are consid... [more] | ED2007-169 CPM2007-95 LQE2007-70 pp.67-72 |
| SDM | 2007-06-07 13:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii (Hitachi), Kenji Shiraishi (Univ. of Tsukuba) SDM2007-31 |
For the purpose of providing higher reliability to MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type nonvolatile memory, we... [more] | SDM2007-31 pp.1-6 |
| ED, CPM, SDM | 2006-05-19 14:00 |
Aichi | VBL, Toyohashi University of Technology | Estimation of trap parameters from a slow component of excess carrier decay curves Masaya Ichimura (Nagoya Inst. Technol.) |
In the photoconductivity decay measurement, a slow component is often observed, especially for wide-bandgap materials, e... [more] | ED2006-38 CPM2006-25 SDM2006-38 pp.101-106 |
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