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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 14:55 |
Shizuoka | Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.)  ED2023-18 CPM2023-60 LQE2023-58 |
We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics... [more] | ED2023-18 CPM2023-60 LQE2023-58 pp.21-24 |
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| EE, OME, CPM | 2022-12-09 11:20 |
Tokyo | (Primary: On-site, Secondary: Online) |
Investigation for one-chip high functionality gate driver IC Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2022-22 CPM2022-77 OME2022-35 |
GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal ... [more] | EE2022-22 CPM2022-77 OME2022-35 pp.18-23 |
| ED, CPM, LQE | 2021-11-26 13:00 |
Online | Online | Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.) ED2021-28 CPM2021-62 LQE2021-40 |
We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three diff... [more] | ED2021-28 CPM2021-62 LQE2021-40 pp.63-66 |
| WPT | 2019-03-08 14:55 |
Kyoto | Kyoto Univ. Uji Campus | Study on the diode modeling of GaN schottky barrier diodes for designing the rectifiers with large power input Takashi Hirakawa, Naoki Shinohara (Kyoto Univ.) WPT2018-91 |
(To be available after the conference date) [more] | WPT2018-91 pp.137-140 |
| CPM, LQE, ED | 2016-12-12 13:00 |
Kyoto | Kyoto University | Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73 |
This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] | ED2016-57 CPM2016-90 LQE2016-73 pp.1-4 |
| CPM, LQE, ED | 2016-12-12 13:25 |
Kyoto | Kyoto University | Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-58 CPM2016-91 LQE2016-74 |
We characterized an early stage of interface degradation by high-reverse-voltage application in Au/Ni/n-GaN Schottky con... [more] | ED2016-58 CPM2016-91 LQE2016-74 pp.5-8 |
| CPM, LQE, ED | 2016-12-12 14:15 |
Kyoto | Kyoto University | Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-60 CPM2016-93 LQE2016-76 |
We fabricated and characterized Au/Ni Schottky contacts on cleaved m-plane free-standing n-GaN surfaces (i) without any ... [more] | ED2016-60 CPM2016-93 LQE2016-76 pp.15-20 |
| WPT | 2016-03-08 09:50 |
Kyoto | Kyoto Univ. Uji Campus | Development of Several Tens of W Class High Power Rectifier with GaN Schottky Barrier Diodes Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaya Okada, Yuusuke Yoshizumi, Masaki Ueno (SEI) WPT2015-87 |
We aimed to develop high power rectifiers of 2.45 GHz with GaN schottky barrier diodes that had about 100 V of the break... [more] | WPT2015-87 pp.61-65 |
| ED | 2016-01-20 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
GaN Schottky Barrier Diode and Microwave Power Transmission Yasuo Ohno (LaS) ED2015-117 |
GaN based electron devices have high potential for high frequency, high power applications, but applications with high i... [more] | ED2015-117 pp.31-35 |
| WPT (2nd) |
2015-12-10 10:00 |
Overseas | TamKang University, Tamsui Campus | Development of High Power Rectifier of 2.45 GHz using GaN Schottky Barrier Diodes with high thermal conductive AlN submounts Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaki Ueno, Masaya Okada, Yuusuke Yoshizumi (SEI) |
We aimed to develop a high power rectifier of 2.45 GHz with a GaN schottky diode that had 107 V of the breakdown voltage... [more] | |
| ED, LQE, CPM | 2015-11-26 14:25 |
Osaka | Osaka City University Media Center | A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2015-75 CPM2015-110 LQE2015-107 |
A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is prese... [more] | ED2015-75 CPM2015-110 LQE2015-107 pp.39-42 |
| SDM | 2015-06-19 09:50 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy Yutaka Tokuda (Aich Inst. of Technol.) SDM2015-39 |
Capacitance transient spectroscopy based on the depletion layer capacitance transients resulting from carrier emission f... [more] | SDM2015-39 pp.5-10 |
| ED, CPM, SDM | 2015-05-28 16:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25 |
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] | ED2015-23 CPM2015-8 SDM2015-25 pp.35-39 |
| LQE, ED, CPM | 2014-11-28 13:40 |
Osaka | Mapping of thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy Kenji Shiojima, Shingo Yamamoto, Yuhei Kihara (Univ. of Fukui) ED2014-91 CPM2014-148 LQE2014-119 |
We have developed a new mapping technique, scanning internal–photoemission microscopy, to characterize the electri... [more] | ED2014-91 CPM2014-148 LQE2014-119 pp.85-90 |
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| WPT | 2014-06-06 14:20 |
Tokyo | Univ. of Tokyo | Prototype of GaN schottky diode for a rectenna Teruo Fujiwara, Yuichiro Ozawa, Naohiro Tanaka (IHI AEROSPACE), Masaaki Kuzuhara (Univ. of Fukui), Kazuhiro Fujimori (Okayama Univ.), Shuichi Yagi (POWDEC), Keisuke Naito (NDK), Shoichiro Mihara, Shuji Nakamura (J-spacesystems) WPT2014-26 |
Schottky Barrier Diode based on GaN semiconductor is developing for high effciency 5.8GHz rectenna toward Space Solar Po... [more] | WPT2014-26 pp.11-16 |
| ED, MW | 2014-01-16 12:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.) ED2013-117 MW2013-182 |
A method for identifying the critical traps regarding to the dynamic behavior of gallium nitride high electron mobility ... [more] | ED2013-117 MW2013-182 pp.41-45 |
| ED, MW | 2014-01-17 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189 |
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] | ED2013-124 MW2013-189 pp.79-84 |
| CPM, LQE, ED | 2013-11-28 14:45 |
Osaka | Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-71 CPM2013-130 LQE2013-106 |
We fabricated and characterized low-Si-doped thick GaN Schottky diodes on GaN substrates with varied C-doping concentrat... [more] | ED2013-71 CPM2013-130 LQE2013-106 pp.35-38 |
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| CPM, LQE, ED | 2013-11-28 15:10 |
Osaka | AC Operation of Low-Mg-Doped p-GaN Schottky Diodes Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-72 CPM2013-131 LQE2013-107 |
Current-voltage (I-V) characteristics with variations of voltage sweep speed (vsweep) and changing sweep directions, and... [more] | ED2013-72 CPM2013-131 LQE2013-107 pp.39-42 |
|
| MW, ED | 2013-01-18 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-122 MW2012-152 |
We present a novel GaN-based normally-off transistor with an integrated Si Schottky barrier diode (SBD) for low voltage ... [more] | ED2012-122 MW2012-152 pp.53-56 |
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