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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-11-10 14:40 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field -- Takuya Maeda (UTokyo)  SDM2023-72 |
The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] | SDM2023-72 pp.41-46 |
| CPM, ED, LQE | 2022-11-25 14:10 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth and device application of InGaN-based nanocolumn crystals using various crystal planes Jumpei Yamada, Ai Mizuno, Rie Togashi, Ichirou Nomura, Katsumi Kishino (Sophia Univ.) ED2022-46 CPM2022-71 LQE2022-79 |
In this study, we investigated the growth of InGaN-based nanocolumns with various crystal orientations and the fabricati... [more] | ED2022-46 CPM2022-71 LQE2022-79 pp.99-102 |
| CCS | 2022-11-17 16:50 |
Mie | (Primary: On-site, Secondary: Online) |
Heuristic Algorithm-based Design Method of Power Converters including Optimization of Resonant Inductors Wenqi Zhu, Yutaro Komiyama (Chiba Univ.), Xiuqin Wei (ChibaTech), Kien Nguyen, Hiroo Sekiya (Chiba Univ.) CCS2022-51 |
In recent years, the invention of wide bandgap semiconductor devices has made it possible to push the switching frequenc... [more] | CCS2022-51 pp.42-46 |
| SDM, ED, CPM | 2022-05-27 16:15 |
Online | Online | Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials Taketomo Sato, Masachika Toguchi (Hokkaido Univ.) ED2022-13 CPM2022-7 SDM2022-20 |
A gallium nitride (GaN) porous structure was formed by wet etching utilizing electrochemical reactions. The refractive i... [more] | ED2022-13 CPM2022-7 SDM2022-20 pp.25-28 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| SAT | 2019-10-10 15:20 |
Fukuoka | JR HAKATA CITY {10F RoomA+B} | Development of highly maintainable and reliable RF transceiver for satellite base stations Munehiro Matsui, Akira Matsushita, Fumihiro Yamashita (NTT) SAT2019-52 |
Maintainability and reliability is required for sustainable operation of satellite communication system. This paper pres... [more] | SAT2019-52 pp.21-26 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2018-01-25 13:40 |
Shizuoka | Shizuoka Univ., Hamamatsu | Luminescence characteristics of GaN films grown by chemical vapor deposition using Ga vapor Yuichiro Masuda, Tsuyoshi Nagase, Wataru Kunieda, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2017-31 |
We have grown gallium nitride (GaN) thin films on c-plane sapphire substrate by chemical vapor deposition (CVD) using Ga... [more] | EID2017-31 pp.5-8 |
| SDM, ED, CPM | 2017-05-26 10:45 |
Aichi | VBL, Nagoya University | N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] | ED2017-26 CPM2017-12 SDM2017-20 pp.59-64 |
| EID, ITE-IDY, IEE-EDD, IEIJ-SSL, SID-JC [detail] | 2017-01-27 11:34 |
Tokushima | Tokushima Univ. | Growth of GaN thin films by chemical vapor deposition using Ga vapor Kensuke Fukasawa, Tsuyoshi Nagase, Yuichirou Masuda, Tetsuya Kouno, Hiroko Kominami, Hara kazuhiko (Shizuoka Univ.) EID2016-45 |
Gallium nitride (GaN) thin films were grown on c-plane sapphire substrates by chemical vapor deposition using Ga vapor a... [more] | EID2016-45 pp.125-128 |
| MW, ED | 2017-01-27 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) ED2016-111 MW2016-187 |
In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 um GaN HEMT proce... [more] | ED2016-111 MW2016-187 pp.81-84 |
| CPM, LQE, ED | 2016-12-12 15:20 |
Kyoto | Kyoto University | Evaluating Current Collapse of GaN HEMT devices by Carrier Number Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) ED2016-62 CPM2016-95 LQE2016-78 |
We report a new method to evaluate current collapse. To exclude self-heating effect during dynamic test, we propose carr... [more] | ED2016-62 CPM2016-95 LQE2016-78 pp.27-30 |
| CPM, LQE, ED | 2016-12-12 17:00 |
Kyoto | Kyoto University | Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) ED2016-66 CPM2016-99 LQE2016-82 |
Electrochemical etching process is demonstrated in this paper to fabricate recessed-gate AlGaN/GaN high electron mobilit... [more] | ED2016-66 CPM2016-99 LQE2016-82 pp.45-50 |
| ED, LQE, CPM | 2015-11-26 13:10 |
Osaka | Osaka City University Media Center | Analysis of hole concentration and mobility of lightly Mg-doped p-type GaN by Hall-effect measurements Masahiro Horita (Kyoto Univ.), Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo (Fuji Electric), Jun Suda (Kyoto Univ.) ED2015-72 CPM2015-107 LQE2015-104 |
Lightly-Mg-doped p-type gallium nitride (GaN) with the Mg concentration of $6.5times 10^{16}~mbox{cm}^{-3}$ was characte... [more] | ED2015-72 CPM2015-107 LQE2015-104 pp.21-25 |
| ED, LQE, CPM | 2015-11-26 14:25 |
Osaka | Osaka City University Media Center | A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2015-75 CPM2015-110 LQE2015-107 |
A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is prese... [more] | ED2015-75 CPM2015-110 LQE2015-107 pp.39-42 |
| ED, LQE, CPM | 2015-11-26 16:30 |
Osaka | Osaka City University Media Center | Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-79 CPM2015-114 LQE2015-111 |
Resonant Raman scattering spectroscopy is crucially useful in studying properties of light-emitting devices. However, it... [more] | ED2015-79 CPM2015-114 LQE2015-111 pp.59-62 |
| ED, LQE, CPM | 2015-11-27 10:25 |
Osaka | Osaka City University Media Center | Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source P.Pungboon Pansila, Kensaku Kanomata, Bashir Ahammad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) ED2015-81 CPM2015-116 LQE2015-113 |
Temperature-controlled ALD of GaN on Si(100) is demonstrated with TMG and plasma-excited NH3. The TMG adsorption and its... [more] | ED2015-81 CPM2015-116 LQE2015-113 pp.69-72 |
| SDM | 2015-11-06 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
GaN-based devices on Si substrates for power conversion systems Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90 |
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] | SDM2015-90 pp.35-38 |
| ED | 2015-08-04 12:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Electrochemical formation and UV photoresponse properties of GaN porous structures Hirofumi Kida, Yusuke Kumazaki, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-53 |
Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and sp... [more] | ED2015-53 pp.51-54 |
| EMT, MW, OPE, MWP, EST, IEE-EMT [detail] | 2015-07-16 13:00 |
Hokkaido | Kushiro City Lifelong Learning Center | A Study of a 400MHz-6GHz High Linearity GaN Low Noise Amplifier Yo Yamaguchi, Takana Kaho, Munenari Kawashima, Kazuhiro Uehara (NTT) EMT2015-12 MW2015-50 OPE2015-24 EST2015-16 MWP2015-15 |
It is necessary to know the status of frequency usage for white space usage. Therefore, it is necessary that the low noi... [more] | EMT2015-12 MW2015-50 OPE2015-24 EST2015-16 MWP2015-15 pp.23-27 |
| SANE | 2014-06-20 14:45 |
Ibaraki | Tsukuba Space Center, JAXA | Development of 20W class X-band Amplifier using GaN
-- The Feasibility Study by the System Evaluation -- Mitsuhiro Nakadai, Johta Awano, Masanobu Yajima (JAXA), Masahiro Funabashi, Tomo Sakata (NTSpace) SANE2014-36 |
Japan Aerospace Exploration Agency (JAXA) has developed a 20W class X-band Solid State Power Amplifier (SSPA) using gall... [more] | SANE2014-36 pp.75-78 |
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