Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2010-48
[Keynote Address]
Challenge for electromechanical logic systems using compound semiconductor heterostructures
Hiroshi Yamaguchi, Imran Mahboob, Hajime Okamoto, Koji Onomitsu (NTT)
pp. 1 - 4
ED2010-49
[Invited Talk]
Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics
Woo Young Choi (Sogang Univ.)
pp. 5 - 6
ED2010-50
[Invited Talk]
Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer
Young Su Kim, Min Ho Kang (National Nanofab Center), Kang Suk Jeong (Chungnam National Univ.), Jae Sub Oh, Dong Eun Yoo (National Nanofab Center), Hi Deok Lee, Ga-Won Lee (Chungnam National Univ.)
pp. 7 - 8
ED2010-51
[Invited Talk]
Piezoelectric material based passive RFID tags
Hyunchul Bae, Jaekwon Kim, Jinwook Burm (Sogang Univ.)
pp. 9 - 10
ED2010-52
[Invited Talk]
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors
Masanobu Miyao (Kyushu Univ.), Kohei Hamaya (Kyushu Univ./JST)
pp. 11 - 13
ED2010-53
[Invited Talk]
Toward high-efficiency thin-film solar cells using semiconducting BaSi2
Takashi Suemasu, Mitsutaka Saito, Atsushi Okada, Katsuaki Tou, Ajimal Khan (Univ. of Tsukuba.), Noritaka Usami (Tohoku Univ.)
pp. 15 - 19
ED2010-54
[Invited Talk]
Applications of Smart Cut(TM) Technologies to III-V Based Engineered Substrates
Makoto Yoshimi (Soitec)
pp. 21 - 22
ED2010-55
A New Cone-Type 1T DRAM Cell
Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)
pp. 23 - 25
ED2010-56
Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory
Jong-Dae Lee, Hyun-Min Seung, Kyoung-Cheol Kwon, Jea-Gun Park (Hanyang Univ.)
pp. 27 - 30
ED2010-57
The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure
Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
pp. 31 - 36
ED2010-58
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect
Doo-Hyun Kim, Gil Sung Lee, Seongjae Cho, Jung Hoon Lee, Jang-Gn Yun, Dong Hua Li, Yoon Kim, Se Hwan Park, Won Bo Shim, Wandong Kim, Byung-Gook Park (Seoul National Univ.)
pp. 37 - 40
ED2010-59
Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode
Donghyun Kim, Jaewook Jeong, Yongtaek Hong (Seoul National Univ.)
pp. 41 - 42
ED2010-60
Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer
Young uk Song, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 43 - 46
ED2010-61
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT)
pp. 47 - 48
ED2010-62
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes
Nobuhiko Tanaka, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.)
pp. 49 - 53
ED2010-63
Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors
Min Jin Lee, Woo Younhg Choi (Sogang Univ.)
pp. 55 - 56
ED2010-64
A design of Novel IGBT with Oblique Trench Gate
Juhyun Oh, Dae Hwan Chun (Koria Univ.), Eui Bok Lee (Koria Univ./KIST), Young Hwan Kim, Chun Keun Kim (KIST), Byeong Kwon Ju, Man Young Sung (Koria Univ.), Yong Tae Kim (KIST)
pp. 57 - 59
ED2010-65
Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects
Yong Tae Kim (KIST), Eui Bok Lee (Koria Univ./KIST), Young Hwan Kim, Chun Keun Kim (KIST), Byeong Kwon Ju (Koria Univ.)
pp. 61 - 63
ED2010-66
[Invited Talk]
Synthesis of wafer scale graphene layer for future electronic devices
Byung Jin Cho, Jeong Hun Mun (KAIST)
pp. 65 - 67
ED2010-67
[Invited Talk]
Graphene channel FET: A New Candidate for High-Speed Devices
Tetsuya Suemitsu (Tohoku Univ.)
pp. 69 - 72
ED2010-68
Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors
J. S. Hwang, H. T. Kim (Korea Univ.), J. H. Lee, D. M. Whang (Korea Univ./Sungkyunkwan Univ.), S. W. Hwang (Korea Univ.)
pp. 73 - 74
ED2010-69
Fabrication of InP/InGaAs DHBTs with buried SiO2 wires
Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)
pp. 75 - 79
ED2010-70
Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs
Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Shoji Yamahata (NTT Photonics Labs.)
pp. 81 - 84
ED2010-71
Electrochemical formation of InP porous structures for their application to photoelectric conversion devices
Hiroyuki Okazaki, Taketomo Sato, Naoki Yoshizawa, Tamotsu Hashizume (Hokkaido Univ)
pp. 85 - 89
ED2010-72
50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique
Satoshi Tsunashima, Michihiro Hirata, Koichi Murata (NTT Corp.)
pp. 91 - 96
ED2010-73
94-GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs
Yong-Hyun Baek, Sang-Jin Lee, Tae-Jong Baek, Seok-Gyu Choi, Min Han, Dong-Sik Ko, Jin-Koo Rhee (Dongguk Univ.)
pp. 97 - 100
ED2010-74
A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation
Bongsub Song (Sogang Univ.), Dohyung Kim (Samsung Electronics), Jinwook Burm (Sogang Univ.)
pp. 101 - 104
ED2010-75
RF Interconnect Technology for On-Chip and Off-Chip Communication
Jongsun Kim (Hongik Univ.), B. Byun, M.Frank Chang (Univ. of California)
pp. 105 - 108
ED2010-76
[Keynote Address]
Future perspective for the mainstream CMOS technology and their contribution to green technologies
Hiroshi Iwai (Tokyo Inst. of Tech.)
pp. 109 - 114
ED2010-77
[Invited Talk]
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
Jungwoo Oh, J. Huang, I. Ok, S. H. Lee, P. D. Kirsch, R. Jammy, Hi-Deok Lee (SEMATECH)
pp. 115 - 118
ED2010-78
[Invited Talk]
III-V/Ge CMOS technologies and heterogeneous integrations on Si platform
Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo.)
pp. 119 - 124
ED2010-79
[Invited Talk]
Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport
Masumi Saitoh, Yukio Nakabayashi (Toshiba), Ken Uchida (Tokyo Inst. of Tech.), Toshinori Numata (Toshiba)
pp. 125 - 129
ED2010-80
[Invited Talk]
Si single-dopant devices and their characterization
Michiharu Tabe, Daniel Moraru, Earfan Hamid, Miftahul Anwar, Arief Udhiarto, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno (Shizuoka Univ.)
pp. 131 - 136
ED2010-81
[Invited Talk]
Investigation on fabrication of nanoscale patterns using laser interference lithography
Jinnil Choi, Jung Ho, Ki-Young Dong, Eun-Mi Park, Byeong-Kwon Ju (Korea Univ.)
pp. 137 - 140
ED2010-82
[Invited Talk]
Bottom-up synthesis of metal-free elementary semiconductor nanowires
Dongmok Whang (Sungkyunkwan Univ.), Sung Woo Hwang (Koria Univ.)
pp. 141 - 142
ED2010-83
Fabrication of Oxide Thin Film Transistor based on SOG dielectric and solution ZnO
Jung Ho Park, Jinnil Choi, Seongpil Chang, Ki-Young Dong, Eun-Mi Park, Byeong-Kwon Ju (Univ. of Korea)
pp. 143 - 146
ED2010-84
Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers
Hyo-seong Seong, Ji-hoon Son, Woo-sung Kim, Hong-seung Kim (Korea Maritime Univ.), Woo-seok Cheong (ETRI), Nak-won Jang (Korea Maritime Univ.)
pp. 147 - 148
ED2010-85
Acivation behaviour for doped Si films after laser or furnace annealing
Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus)
pp. 149 - 153
ED2010-86
Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients
Chun-Hyung Cho, Ho-Young Cha (Hongik Univ.)
pp. 155 - 160
ED2010-87
Fabrication of gas sensor using pd doped SnO2 nanotubes
Ki-Young Dong, In-Sung Hwang, Dae-Jin Ham, Jinnil Choi, Jung-Ho Park, Jong-Heun Lee, Byeong-Kwon Ju (Korea Univ.)
pp. 161 - 162
ED2010-88
Analysis of Transfer Gate in CMOS Image Sensor
Seonghyung Park, Hyuk-Min Kwon, Jung-Deuk Bok, In-Shik Han, Woonil Choi, Hi-Deok Lee (Chungnam National Univ)
pp. 163 - 164
ED2010-89
Interaction of bis-diethylaminosilane with hydroxylized Si (001) surface for SiO2 thin-film growth using density functional theory
Seung-Bin Baek, Dae-Hee Kim (Korea Univ. of Tech. and Edu.), Yong-Chan Jeong (ASM Genitech), Yeong-Cheol Kim (Korea Univ. of Tech. and Edu.)
pp. 165 - 168
ED2010-90
Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta2O5 gate stacks
Hoon-Ki Lee, Jagadeesh Chandra, Kyu-Hwan Shim (Chonbuk National Univ.), Hyung-Joong Yun, Jouhahn Lee (KBSI), Chel-Jong Choi (Chonbuk National Univ.)
pp. 169 - 172
ED2010-91
Modulation of PtSi work function by alloying with low work function metal
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
pp. 173 - 176
ED2010-92
The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter
Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.)
pp. 177 - 182
ED2010-93
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface
Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 183 - 188
ED2010-94
Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities
Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
pp. 189 - 194
ED2010-95
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET
Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh (Tohoku Univ.)
pp. 195 - 198
ED2010-96
[Invited Talk]
High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications
Yung-Chun Wu, Min-Feng Hung, Jiang-Hung Chen, Lun-Chun Chen, Ji-Hong Jiang (National Tsing Hua Univ. Taiwan)
pp. 199 - 204
ED2010-97
[Invited Talk]
A Single Element Phase Transition Memory
Sang-Hyeon Lee, Moonkyung Kim (Cornell Univ.), Byung-ki Cheong (KIST), Jooyeon Kim (Ulsan College), Jo-Won Lee (National Program for Tera-level Nano Devices, Korea), Sandip Tiwari (Cornell Univ.)
pp. 205 - 209
ED2010-98
Impact of Floating Body type DRAM with the Vertical MOSFET
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ./JST)
pp. 211 - 216
ED2010-99
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect
Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)
pp. 217 - 220
ED2010-100
Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories
Akira Otake, Keita Yamaguchi, Kenji Shiraishi (Univ. of Tsukuba.)
pp. 221 - 224
ED2010-101
The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure
Moon-Sik Seo (Tohoku Univ.), Tetsuo Endoh (Tohoku Univ./JST)
pp. 225 - 230
ED2010-102
New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells
Seung Hyeun Roh, Woo Young Choi (Sogang Univ.)
pp. 231 - 232
ED2010-103
[Invited Talk]
Development of Low on-resistance SiC Trench MOSFET and other SiC power devices
Yuki Nakano, Ryota Nakamura, Katsuhisa Nagao, Takashi Nakamura, Hidemi Takasu (ROHM)
pp. 233 - 236
ED2010-104
Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
Jaegil Lee, Chun-Hyung Cho, Ho-Young Cha (Hongik Univ.)
pp. 237 - 240
ED2010-105
[Invited Talk]
InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD
Makoto Miyoshi, Shigeaki Sumiya, Mikiya Ichimura, Tomohiko Sugiyama, Sota Maehara, Mitsuhiro Tanaka (NGK), Takashi Egawa (Nagoya Inst. of Tech.)
pp. 241 - 244
ED2010-106
A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric
Joseph Freedsman, Arata Watanabe, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 245 - 248
ED2010-107
Characterization of deep electron levels of AlGaN grown by MOVPE
Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST)
pp. 249 - 252
ED2010-108
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process
Tsutomu Uesugi, Tetsu Kachi (Toyota Central R&D Labs.), Tamotsu Hashizume (Hokkaido Univ.)
pp. 253 - 256
ED2010-109
The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation
Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki (Tohoku Univ.)
pp. 257 - 262
ED2010-110
Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
Masashi Kamiyanagi, Takuya Imamoto, Takeshi Sasaki, Hyoungjun Na, Tetsuo Endoh (Tohoku Univ.)
pp. 263 - 267
ED2010-111
A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process
Jae-Young Park, Dae-Woo Kim, Young-San Son, Jong-Chan Ha, Jong-Kyu Song, Chang-Soo Jang, Won-Young Jung (Dongbu HiTek)
pp. 269 - 274
ED2010-112
A Precision Floating-Gate Mismatch Measurement Technique for Analog Applications
Won-Young Jung, Jong Min Kim, Jin-Soo Kim, Taek-Soo Kim (Dongbu HiTek)
pp. 275 - 278
ED2010-113
A Physical-Based Modeling for Accurate Wide-Width LDMOS
Won-Young Jung, Jong-Sub Lee, Eun-Jin Kim, Ki-Jung Park, San-Hun Kwak, Jin-Soo Kim, Taek-Soo Kim (Dongbu HiTek)
pp. 279 - 282
ED2010-114
Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells
Tetsuo Endoh, Yasuhiko Suzuki, Takuya Imamoto, Hyoungjun Na (Tohoku Univ.)
pp. 283 - 288
ED2010-115
A V-band Common-Source Low Noise Amplifier in 0.13 μm RFCMOS Technology
Sung-Jin Kim, Dong-Hyun Kim, Jae-Sung Rieh (Korea Univ.)
pp. 289 - 292
ED2010-116
A 0.18 um CMOS process 10-PAM transceiver for 10 Gigabit Ethernet
Nayeon Cho, J K Jeong, J J Lee, J Burm (Sogang Univ.)
pp. 293 - 296
ED2010-117
A Switched-Capacitor Integrator Using Dynamic Source-Follower Amplifiers
Ryoto Yaguchi, Fumiyuki Adachi, Takao Waho (Sophia Univ.)
pp. 297 - 300
ED2010-118
A Basic Study on RF Characteristics of Short Wavelength Comb-type Transmission Line on MMIC
Jang-Hyeon Jeong, Young-Bae Park, Bo-Ra Jung, Jeong-Gab Ju, Eui-Hoon Jang, Chi-Hong Min, Seong-Il Hong, Suk-Youb Kang, Hong Seung Kim, Young Yun (Korea Maritime Univ.)
pp. 301 - 302
ED2010-119
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance
Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 303 - 308
ED2010-120
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST)
pp. 309 - 313
ED2010-121
Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current
Joung-eob Lee, Kwon-Chil Kang, Jung Han Lee, Kim Kyung Wan, Byung-Gook Park (Seoul National Univ.)
pp. 315 - 318
ED2010-122
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.)
pp. 319 - 324
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.