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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2023-11-01 15:10 |
Hyogo | JIBASAN Bidg. (Himeji) | [Invited Talk]
Thermal and non-thermal equilibrium process of charge carrier extraction in metal/insulator/organic Semiconductor/metal (MIOM) Junction Hiroyuki Tajima, Takeshi Oda (Univ. Hyogo), Tomofumi Kadoya (Konan Univ.)  OME2023-47 |
This paper presents the concept and experimental evidence of the non-thermal equilibrium (NTE) process of charge-carrier... [more] | OME2023-47 pp.21-26 |
| OME | 2022-01-07 14:05 |
Osaka | CENTRAL ELECTRIC CLUB | Device characteristics of organic floating-gate memories based on n-channel polymer transistors Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48 |
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] | OME2021-48 pp.4-8 |
| SDM | 2019-11-08 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74 |
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] | SDM2019-74 pp.27-32 |
| SDM | 2018-11-09 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74 |
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] | SDM2018-74 pp.47-52 |
| SDM | 2017-01-30 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130 |
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] | SDM2016-130 pp.1-4 |
| SDM | 2016-06-29 16:20 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET Takamasa Kawanago, Shunri Oda (Tokyo Tech.) SDM2016-45 |
In this study, self-assembled-monolayer (SAM)-based gate dielectrics is applied to the fabrication of molybdenum disulfi... [more] | SDM2016-45 pp.69-74 |
| ED | 2016-01-20 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
State-of-the-art technology of gallium oxide power devices Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114 |
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] | ED2015-114 pp.13-18 |
| EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] | 2014-01-25 11:06 |
Niigata | Niigata University | Study of temperature dependence on field effect mobility of organic thin-film transistors Tatsuya Matsumoto, Seung-Kyum Kim, Reiji Hattori (Kyushu Univ.) EID2013-29 |
In order to clarify the carrier-injection system on organic thin-film transistors (OTFTs), we compared the temperature d... [more] | EID2013-29 pp.117-120 |
| ED, MW | 2014-01-16 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181 |
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] | ED2013-116 MW2013-181 pp.35-39 |
| ED, MW | 2014-01-17 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189 |
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] | ED2013-124 MW2013-189 pp.79-84 |
| OME | 2013-03-08 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B1-2 | Design of New Organic Semiconducting Molecules and Their Application to Organic Field-effect Transistors Koji Nakano (Tokyo Univ. of Agriculture and Tech./JST), Natsuko Chayama, Minh anh Truong, Shunsuke Kodama, Kyoko Nozaki (Univ. of Tokyo) OME2012-108 |
Furan-fused heteroacenes, dibenzo[d,d']benzo[1,2-b:4,5-b']difurans (DBBDFs) were designed as a new family of organic sem... [more] | OME2012-108 pp.13-16 |
| OME, OPE | 2012-11-16 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of flexible OFET characteristics by using EFI-SHG
-- the effect of bending -- Yohei Abe, Dai Taguchi, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech) OME2012-57 OPE2012-129 |
We studied the effect of bending on flexible organic field-effect transistors (active layer: TIPS pentacene, gate-insula... [more] | OME2012-57 OPE2012-129 pp.13-18 |
| SDM, ED (Workshop) |
2012-06-27 11:45 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors Kyung Rok Kim, Min Woo Ryu, Sunhae Shin, Hee Cheol Hwang, Kibog Park (UNIST) |
We report the first implementation of a modeling and simulation environment for the plasmonic terahertz (THz) detector b... [more] | |
| SDM, ED (Workshop) |
2012-06-27 13:15 |
Okinawa | Okinawa Seinen-kaikan | Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.) |
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more] | |
| SDM, ED (Workshop) |
2012-06-28 10:40 |
Okinawa | Okinawa Seinen-kaikan | [Poster Presentation]
Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances. Jae Hwa Seo, Jae Sung Lee, Yun Soo Park, Jung-Hee Lee, In Man Kang (Kyunpook Nat'l Univ.) |
A gate-all-around tunneling field-effect transistor (GAA TFET) with high-k gate-dielectric and n-pocket layer is demonst... [more] | |
| OME | 2011-12-21 16:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Organic field-effect transistors with solution-processed graphene electrodes Koichi Suganuma (Saitama Univ.), Koichiro Saiki (The Univ. of Tokyo), Takuya Goto (Mitsubishi Gas Chemical Company Inc.), Keiji Ueno (Saitama Univ.) OME2011-72 |
Solution-processed electrodes for organic field effect transistor (OFET) were fabricated using a graphene oxide (GO) sol... [more] | OME2011-72 pp.35-39 |
| ED | 2011-12-14 14:05 |
Miyagi | Tohoku University | Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers
-- Effects of AlGaN barrier thinning -- Masataka Higashiwaki (NICT/JST), Yi Pei, Rongming Chu, Umesh K. Mishra (UCSB) ED2011-102 |
Short-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with extremely thin AlGaN barrier layers were fabr... [more] | ED2011-102 pp.13-17 |
| OPE, OME | 2011-11-18 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication of Step-Edge Vertical Channel Organic Field-Effect Transistors Using Nanoimprint Lithography Masahiro Fukiyama, Hiroshi Yamauchi, Masaaki Iizuka, Masatoshi Sakai, Kazuhiro Kudo (Chiba Univ.) OME2011-63 OPE2011-138 |
The reduction of channel length is one of the effective approaches to achieve the low operation voltage and large curren... [more] | OME2011-63 OPE2011-138 pp.31-36 |
| OME | 2011-09-22 16:35 |
Osaka | Osaka City Central Public Hall | Device characteristics of silica nanoparticles dispersed solution-processable organic transistors Masashi Yoshikawa, Takashi Nagase, Saori Yamazaki, Takashi Kobayashi (Osaka Pref. Univ.), Yoshiki Michiwaki (Fuso Chem. Co., Ltd.), Seiji Watase, Mitsuru Watanabe, Kimihiro Matsukawa (OMTRI), Hiroyoshi Naito (Osaka Pref. Univ.) OME2011-47 |
The effect of the dispersion of silica nanoparticles (SNPs) on solution-processable organic field-effect transistors (OF... [more] | OME2011-47 pp.31-34 |
| CPM, LQE, ED | 2010-11-12 11:15 |
Osaka | Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113 |
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] | ED2010-157 CPM2010-123 LQE2010-113 pp.67-70 |
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