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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 14:20 |
Shizuoka | Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu)  ED2023-17 CPM2023-59 LQE2023-57 |
In this study, we investigated the effect of oxidant sources on carbon-related impurities in atomic layer deposited (ALD... [more] | ED2023-17 CPM2023-59 LQE2023-57 pp.15-20 |
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| SDM | 2021-10-21 13:50 |
Online | Online | A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) SDM2021-48 |
We investigated the in-situ formed Hf-based MONOS non-volatile memory (NVM) device with HfO2 and HfON tunneling layer (T... [more] | SDM2021-48 pp.16-19 |
| SCE | 2021-01-19 13:30 |
Online | Online | Thermal Conductance of Tri-layer Membranes for Multi-Pixel Gamma-Ray Transition Edge Sensors Takahiro Kikuchi, Satoshi Kohjiro, Ryota Hayakawa, Go Fujii, Fuminori Hirayama, Masahiro Ukibe (AIST), Ryan Smith, Masashi Ohno (U-Tokyo) SCE2020-18 |
We have been developing the Gamma-ray Transition Edge Sensors (TESs) which is able to achieve high energy resolution. Mu... [more] | SCE2020-18 pp.7-12 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| CPM, LQE, ED | 2019-11-21 13:55 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84 |
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] | ED2019-41 CPM2019-60 LQE2019-84 pp.37-40 |
| EMD | 2019-03-01 10:35 |
Tokyo | A study in influences of external magnetic field on break arc characteristics of AgSnO2 contacts in a DC inductive load circuit up to 20V-17A up to 20V-17A Seika Tokumitsu, Makoto Hasegawa (Chitose Inst. of Science & Technology) EMD2018-59 |
For the purpose of investigating influences of application of an external magnetic field on shortenings of break arc dur... [more] | EMD2018-59 pp.1-6 |
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| PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] | 2019-01-17 16:20 |
Osaka | Osaka University Nakanoshima Center | Surface Improvement Investigation of Sol-Gel SiO2 Cladding for Waveguide Device Passivation Satoshi Ogawa, Ahmad Syahrin Idris, Yu Han, Haisong Jiang, Kiichi Hamamoto (Kyushu Univ.) PN2018-53 EMT2018-87 OPE2018-162 LQE2018-172 EST2018-100 MWP2018-71 |
For exploiting sol-gel SiO2 for waveguide device passivation, plasma-ashing, in addition to 700 ℃ annealing, is proposed... [more] | PN2018-53 EMT2018-87 OPE2018-162 LQE2018-172 EST2018-100 MWP2018-71 pp.127-130 |
| SDM | 2018-06-25 11:40 |
Aichi | Nagoya Univ. VBL3F | Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18 |
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] | SDM2018-18 pp.11-14 |
| SDM | 2018-06-25 15:15 |
Aichi | Nagoya Univ. VBL3F | Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22 |
A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding featur... [more] | SDM2018-22 pp.29-32 |
| LQE, CPM, ED | 2017-12-01 12:30 |
Aichi | Nagoya Inst. tech. | Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74 |
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] | ED2017-61 CPM2017-104 LQE2017-74 pp.61-64 |
| ED | 2017-04-20 15:25 |
Miyagi | Fabrication of SnO2 film using room temperature atomic layer deposition Syunsuke Saito, Kentaro Tokoro, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-5 |
Since most of the gas sensors using tin oxide (SnO2) are sintered type, there is a problem that variations in characteri... [more] | ED2017-5 pp.17-20 |
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| MW, ED | 2017-01-27 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ED2016-103 MW2016-179 |
III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high elec... [more] | ED2016-103 MW2016-179 pp.35-40 |
| SDM | 2016-06-29 14:45 |
Tokyo | Campus Innovation Center Tokyo | Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) SDM2016-41 |
SiO2 thin films have been deposited on H-terminated Si surface by remote O2 plasma enhanced CVD (O2-RPCVD) using SiH4 an... [more] | SDM2016-41 pp.49-52 |
| ED | 2016-04-21 16:25 |
Yamagata | Room-temperature atomic layer deposition of TiO2 on nanoparticles Ko Kikuchi, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) ED2016-5 |
Metal oxide modification on nanoparticles has attracted attention to achieve new surface functions on them. Room-tempera... [more] | ED2016-5 pp.17-20 |
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| ED | 2015-04-17 09:55 |
Miyagi | Laboratory for Nanoelectronics and Spintronics | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen Kensaku Kanomata, Hisashi Ohba, P. Pungboon Pansila, Bashir Ahmmad Arima, Shigeru Kubota, Kazuhiro Hirahara, Fumihiko Hirose (Yamagata Univ.) ED2015-11 |
Room-temperature atomic layer deposition (ALD) of hafnium dioxide is developed using tetrakis(ethylmethylamino)hafnium (... [more] | ED2015-11 pp.53-58 |
| SDM | 2014-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43 |
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] | SDM2014-43 pp.1-5 |
| SDM, ED (Workshop) |
2012-06-28 10:00 |
Okinawa | Okinawa Seinen-kaikan | Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect tr... [more] | |
| SDM | 2009-12-04 15:50 |
Nara | NAIST | Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-166 |
Thermal plasma jet (TPJ) induced millisecond annealing has been performed to SiO2 films deposited at 300C by remote plas... [more] | SDM2009-166 pp.79-82 |
| SDM | 2009-10-30 13:00 |
Miyagi | Tohoku University | Recovery from Reactive Ion Etching Damage in SiO2 Films Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) SDM2009-129 |
As the MOS device shrinkage progress, the influence of RIE(Reactive Ion Etching) damage becomes remarkable. Especially, ... [more] | SDM2009-129 pp.51-56 |
| SDM | 2009-06-19 13:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2009-34 |
The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem w... [more] | SDM2009-34 pp.45-50 |
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