09:30-09:40	委員長挨拶　（ 10分 ）
6月30日(水) 午前  -Plenary Session 1- 09:40 - 10:30
(1)	09:40-10:20	［基調講演］Challenge for electromechanical logic systems using compound semiconductor heterostructures ED2010-48 SDM2010-49	○Hiroshi Yamaguchi・Imran Mahboob・Hajime Okamoto・Koji Onomitsu（NTT）
	10:20-10:30	休憩　（ 10分 ）
6月30日(水) 午前  -Session 1A : Emerging Device Technology 1- 10:30 - 14:25
(1)	10:30-10:55	［招待講演］Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics ED2010-49 SDM2010-50	○Woo Young Choi（Sogang Univ.）
(2)	10:55-11:20	［招待講演］Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer ED2010-50 SDM2010-51	Young Su Kim・Min Ho Kang（National Nanofab Center）・Kang Suk Jeong（Chungnam National Univ.）・Jae Sub Oh・Dong Eun Yoo（National Nanofab Center）・Hi Deok Lee・○Ga-Won Lee（Chungnam National Univ.）
(3)	11:20-11:45	［招待講演］Piezoelectric material based passive RFID tags ED2010-51 SDM2010-52	○Hyunchul Bae・Jaekwon Kim・Jinwook Burm（Sogang Univ.）
	11:45-12:00	休憩　（ 15分 ）
(4)	12:00-12:25	［招待講演］Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors ED2010-52 SDM2010-53	○Masanobu Miyao（Kyushu Univ.）・Kohei Hamaya（Kyushu Univ./JST）
(5)	12:25-12:50	［招待講演］Toward high-efficiency thin-film solar cells using semiconducting BaSi2 ED2010-53 SDM2010-54	○Takashi Suemasu・Mitsutaka Saito・Atsushi Okada・Katsuaki Tou・Ajimal Khan（Univ. of Tsukuba.）・Noritaka Usami（Tohoku Univ.）
(6)	12:50-13:15	［招待講演］Applications of Smart Cut(TM) Technologies to III-V Based Engineered Substrates ED2010-54 SDM2010-55	○Makoto Yoshimi（Soitec）
	13:15-14:25	昼食　（ 70分 ）
6月30日(水) 午後  -Session 2A : Memory 1- 14:25 - 15:40
(1)	14:25-14:40	A New Cone-Type 1T DRAM Cell ED2010-55 SDM2010-56	○Gil Sung Lee・Doo-Hyun Kim・Jang-Gn Yun・Jung Hoon Lee・Yoon Kim・Jong-Ho Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
(2)	14:40-14:55	Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory ED2010-56 SDM2010-57	○Jong-Dae Lee・Hyun-Min Seung・Kyoung-Cheol Kwon・Jea-Gun Park（Hanyang Univ.）
(3)	14:55-15:10	The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure ED2010-57 SDM2010-58	○Guobin Wei・Yuta Goto・Akio Ohta・Katsunori Makihara・Hideki Murakami・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.）
(4)	15:10-15:25	Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect ED2010-58 SDM2010-59	○Doo-Hyun Kim・Gil Sung Lee・Seongjae Cho・Jung Hoon Lee・Jang-Gn Yun・Dong Hua Li・Yoon Kim・Se Hwan Park・Won Bo Shim・Wandong Kim・Byung-Gook Park（Seoul National Univ.）
	15:25-15:40	休憩　（ 15分 ）
6月30日(水) 午後  -Session 3A : Emerging Device Technology 2- 15:40 - 17:25
(1)	15:40-15:55	Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode ED2010-59 SDM2010-60	○Donghyun Kim・Jaewook Jeong・Yongtaek Hong（Seoul National Univ.）
(2)	15:55-16:10	Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer ED2010-60 SDM2010-61	○Young uk Song・Shun-ichiro Ohmi（Tokyo Inst. of Tech.）
(3)	16:10-16:25	Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures ED2010-61 SDM2010-62	○Safumi Suzuki・Kiyohito Sawada・Atsushi Teranishi・Masahiro Asada（Tokyo Inst. of Tech.）・Hiroki Sugiyama・Haruki Yokoyama（NTT）
(4)	16:25-16:40	Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes ED2010-62 SDM2010-63	○Nobuhiko Tanaka・Mitsufumi Saito・Michihiko Suhara（Tokyo Metro. Univ.）
(5)	16:40-16:55	Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors ED2010-63 SDM2010-64	○Min Jin Lee・Woo Younhg Choi（Sogang Univ.）
(6)	16:55-17:10	A design of Novel IGBT with Oblique Trench Gate ED2010-64 SDM2010-65	Juhyun Oh・Dae Hwan Chun（Koria Univ.）・Eui Bok Lee（Koria Univ./KIST）・○Young Hwan Kim・Chun Keun Kim（KIST）・Byeong Kwon Ju・Man Young Sung（Koria Univ.）・Yong Tae Kim（KIST）
(7)	17:10-17:25	Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects ED2010-65 SDM2010-66	○Yong Tae Kim（KIST）・Eui Bok Lee（Koria Univ./KIST）・Young Hwan Kim・Chun Keun Kim（KIST）・Byeong Kwon Ju（Koria Univ.）
6月30日(水) 午後  -Session 2B : Graphene and ?-?s- 14:25 - 16:30
(1)	14:25-14:50	［招待講演］Synthesis of wafer scale graphene layer for future electronic devices ED2010-66 SDM2010-67	○Byung Jin Cho・Jeong Hun Mun（KAIST）
(2)	14:50-15:15	［招待講演］Graphene channel FET: A New Candidate for High-Speed Devices ED2010-67 SDM2010-68	○Tetsuya Suemitsu（Tohoku Univ.）
(3)	15:15-15:30	Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors ED2010-68 SDM2010-69	○J. S. Hwang・H. T. Kim（Korea Univ.）・J. H. Lee・D. M. Whang（Korea Univ./Sungkyunkwan Univ.）・S. W. Hwang（Korea Univ.）
(4)	15:30-15:45	Fabrication of InP/InGaAs DHBTs with buried SiO2 wires ED2010-69 SDM2010-70	○Naoaki Takebe・Takashi Kobayashi・Hiroyuki Suzuki・Yasuyuki Miyamoto・Kazuhito Furuya（Tokyo Inst. of Tech.）
(5)	15:45-16:00	Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs ED2010-70 SDM2010-71	○Yoshino K. Fukai・Kenji Kurishima・Norihide Kashio・Shoji Yamahata（NTT Photonics Labs.）
(6)	16:00-16:15	Electrochemical formation of InP porous structures for their application to photoelectric conversion devices ED2010-71 SDM2010-72	○Hiroyuki Okazaki・Taketomo Sato・Naoki Yoshizawa・Tamotsu Hashizume（Hokkaido Univ）
	16:15-16:30	休憩　（ 15分 ）
6月30日(水) 午後  -Session 3B : High Speed and High Frequency Applications 1- 16:30 - 17:30
(1)	16:30-16:45	50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique ED2010-72 SDM2010-73	○Satoshi Tsunashima・Michihiro Hirata・Koichi Murata（NTT Corp.）
(2)	16:45-17:00	94-GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs ED2010-73 SDM2010-74	○Yong-Hyun Baek・Sang-Jin Lee・Tae-Jong Baek・Seok-Gyu Choi・Min Han・Dong-Sik Ko・Jin-Koo Rhee（Dongguk Univ.）
(3)	17:00-17:15	A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation ED2010-74 SDM2010-75	○Bongsub Song（Sogang Univ.）・Dohyung Kim（Samsung Electronics）・Jinwook Burm（Sogang Univ.）
(4)	17:15-17:30	RF Interconnect Technology for On-Chip and Off-Chip Communication ED2010-75 SDM2010-76	○Jongsun Kim（Hongik Univ.）・B. Byun・M.Frank Chang（Univ. of California）
7月1日(木) 午前  -Plenary Session 2- 09:30 - 10:20
(1)	09:30-10:10	［基調講演］Future perspective for the mainstream CMOS technology and their contribution to green technologies ED2010-76 SDM2010-77	○Hiroshi Iwai（Tokyo Inst. of Tech.）
	10:10-10:20	休憩　（ 10分 ）
7月1日(木) 午前  -Session 4A : Channel Engineering- 10:20 - 11:50
(1)	10:20-10:45	［招待講演］High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility ED2010-77 SDM2010-78	○Jungwoo Oh・J. Huang・I. Ok・S. H. Lee・P. D. Kirsch・R. Jammy・Hi-Deok Lee（SEMATECH）
(2)	10:45-11:10	［招待講演］III-V/Ge CMOS technologies and heterogeneous integrations on Si platform ED2010-78 SDM2010-79	○Shinichi Takagi・Mitsuru Takenaka（Univ. of Tokyo.）
(3)	11:10-11:35	［招待講演］Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport ED2010-79 SDM2010-80	○Masumi Saitoh・Yukio Nakabayashi（Toshiba）・Ken Uchida（Tokyo Inst. of Tech.）・Toshinori Numata（Toshiba）
	11:35-11:50	休憩　（ 15分 ）
7月1日(木) 午前  -Session 5A : Emerging Device Technology 3- 11:50 - 13:05
(4)	11:50-12:15	［招待講演］Si single-dopant devices and their characterization ED2010-80 SDM2010-81	○Michiharu Tabe・Daniel Moraru・Earfan Hamid・Miftahul Anwar・Arief Udhiarto・Ryusuke Nakamura・Sakito Miki・Takeshi Mizuno（Shizuoka Univ.）
(5)	12:15-12:40	［招待講演］Investigation on fabrication of nanoscale patterns using laser interference lithography ED2010-81 SDM2010-82	○Jinnil Choi・Jung Ho・Ki-Young Dong・Eun-Mi Park・Byeong-Kwon Ju（Korea Univ.）
(6)	12:40-13:05	［招待講演］Bottom-up synthesis of metal-free elementary semiconductor nanowires ED2010-82 SDM2010-83	○Dongmok Whang（Sungkyunkwan Univ.）・Sung Woo Hwang（Koria Univ.）
7月2日(金) 午前  -Session 6A : TFTs and Sensors- 09:30 - 11:15
(1)	09:30-09:45	Fabrication of Oxide Thin Film Transistor based on SOG dielectric and solution ZnO ED2010-83 SDM2010-84	○Jung Ho Park・Jinnil Choi・Seongpil Chang・Ki-Young Dong・Eun-Mi Park・Byeong-Kwon Ju（Univ. of Korea）
(2)	09:45-10:00	Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers ED2010-84 SDM2010-85	○Hyo-seong Seong・Ji-hoon Son・Woo-sung Kim・Hong-seung Kim（Korea Maritime Univ.）・Woo-seok Cheong（ETRI）・Nak-won Jang（Korea Maritime Univ.）
(3)	10:00-10:15	Acivation behaviour for doped Si films after laser or furnace annealing ED2010-85 SDM2010-86	Takashi Noguchi・○Toshiharu Suzuki（Univ. of Ryukyus）
(4)	10:15-10:30	Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients ED2010-86 SDM2010-87	○Chun-Hyung Cho・Ho-Young Cha（Hongik Univ.）
(5)	10:30-10:45	Fabrication of gas sensor using pd doped SnO2 nanotubes ED2010-87 SDM2010-88	○Ki-Young Dong・In-Sung Hwang・Dae-Jin Ham・Jinnil Choi・Jung-Ho Park・Jong-Heun Lee・Byeong-Kwon Ju（Korea Univ.）
(6)	10:45-11:00	Analysis of Transfer Gate in CMOS Image Sensor ED2010-88 SDM2010-89	○Seonghyung Park・Hyuk-Min Kwon・Jung-Deuk Bok・In-Shik Han・Woonil Choi・Hi-Deok Lee（Chungnam National Univ）
	11:00-11:15	休憩　（ 15分 ）
7月2日(金) 午前  -Session 7A : Gate Oxides- 11:15 - 14:15
(1)	11:15-11:30	Interaction of bis-diethylaminosilane with hydroxylized Si (001) surface for SiO2 thin-film growth using density functional theory ED2010-89 SDM2010-90	○Seung-Bin Baek・Dae-Hee Kim（Korea Univ. of Tech. and Edu.）・Yong-Chan Jeong（ASM Genitech）・Yeong-Cheol Kim（Korea Univ. of Tech. and Edu.）
(2)	11:30-11:45	Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta2O5 gate stacks ED2010-90 SDM2010-91	○Hoon-Ki Lee・Jagadeesh Chandra・Kyu-Hwan Shim（Chonbuk National Univ.）・Hyung-Joong Yun・Jouhahn Lee（KBSI）・Chel-Jong Choi（Chonbuk National Univ.）
(3)	11:45-12:00	Modulation of PtSi work function by alloying with low work function metal ED2010-91 SDM2010-92	○Jun Gao・Jumpei Ishikawa・Shun-ichiro Ohmi（Tokyo Inst. of Tech.）
(4)	12:00-12:15	The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter ED2010-92 SDM2010-93	○Takeshi Sasaki・Takuya Imamoto・Tetsuo Endoh（Tohoku Univ.）
(5)	12:15-12:30	High Integrity Gate Insulator Films on Atomically Flat Silicon Surface ED2010-93 SDM2010-94	○Xiang Li・Rihito Kuroda・Tomoyuki Suwa・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.）
(6)	12:30-12:45	Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities ED2010-94 SDM2010-95	○Akio Ohta・Daisuke Kanme・Hideki Murakami・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.）
(7)	12:45-13:00	Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET ED2010-95 SDM2010-96	○Takuya Imamoto・Takeshi Sasaki・Tetsuo Endoh（Tohoku Univ.）
	13:00-14:15	昼食　（ 75分 ）
7月2日(金) 午後  -Session 8A : Memory 2- 14:15 - 16:50
(1)	14:15-14:40	［招待講演］High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications ED2010-96 SDM2010-97	○Yung-Chun Wu・Min-Feng Hung・Jiang-Hung Chen・Lun-Chun Chen・Ji-Hong Jiang（National Tsing Hua Univ. Taiwan）
(2)	14:40-15:05	［招待講演］A Single Element Phase Transition Memory ED2010-97 SDM2010-98	Sang-Hyeon Lee・○Moonkyung Kim（Cornell Univ.）・Byung-ki Cheong（KIST）・Jooyeon Kim（Ulsan College）・Jo-Won Lee（National Program for Tera-level Nano Devices, Korea）・Sandip Tiwari（Cornell Univ.）
(3)	15:05-15:20	Impact of Floating Body type DRAM with the Vertical MOSFET ED2010-98 SDM2010-99	○Yuto Norifusa・Tetsuo Endoh（Tohoku Univ./JST）
	15:20-15:35	休憩　（ 15分 ）
(4)	15:35-15:50	Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect ED2010-99 SDM2010-100	○Yoon Kim・Jang-Gn Yun・Jung Hoon Lee・Gil Sung Lee・Se Hwan Park・Jong-Ho Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
(5)	15:50-16:05	Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories ED2010-100 SDM2010-101	Akira Otake・○Keita Yamaguchi・Kenji Shiraishi（Univ. of Tsukuba.）
(6)	16:05-16:20	The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure ED2010-101 SDM2010-102	○Moon-Sik Seo（Tohoku Univ.）・Tetsuo Endoh（Tohoku Univ./JST）
(7)	16:20-16:35	New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells ED2010-102 SDM2010-103	○Seung Hyeun Roh・Woo Young Choi（Sogang Univ.）
	16:35-16:40	休憩　（ 5分 ）
	16:40-16:50	委員長挨拶　（ 10分 ）
7月2日(金) 午前  -Session 6B : Wide Bandgap Materials and Devices, Power Devices- 09:30 - 11:35
(1)	09:30-09:55	［招待講演］Development of Low on-resistance SiC Trench MOSFET and other SiC power devices ED2010-103 SDM2010-104	○Yuki Nakano・Ryota Nakamura・Katsuhisa Nagao・Takashi Nakamura・Hidemi Takasu（ROHM）
(2)	09:55-10:10	Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors ED2010-104 SDM2010-105	○Jaegil Lee・Chun-Hyung Cho・Ho-Young Cha（Hongik Univ.）
(3)	10:10-10:35	［招待講演］InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD ED2010-105 SDM2010-106	○Makoto Miyoshi・Shigeaki Sumiya・Mikiya Ichimura・Tomohiko Sugiyama・Sota Maehara・Mitsuhiro Tanaka（NGK）・Takashi Egawa（Nagoya Inst. of Tech.）
(4)	10:35-10:50	A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric ED2010-106 SDM2010-107	○Joseph Freedsman・Arata Watanabe・Lawrence Selvaraj・Takashi Egawa（Nagoya Inst. of Tech.）
(5)	10:50-11:05	Characterization of deep electron levels of AlGaN grown by MOVPE ED2010-107 SDM2010-108	○Kimihito Ooyama（Hokkaido Univ./SMM）・Katsuya Sugawara（Hokkaido Univ.）・Hiroyuki Taketomi・Hideto Miyake・Kazumasa Hiramatsu（Mie Univ.）・Tamotsu Hashizume（Hokkaido Univ./JST）
(6)	11:05-11:20	Characteristics of GaN p-n diode with damage layer induced by ICP plasma process ED2010-108 SDM2010-109	○Tsutomu Uesugi・Tetsu Kachi（Toyota Central R&D Labs.）・Tamotsu Hashizume（Hokkaido Univ.）
	11:20-11:35	休憩　（ 15分 ）
7月2日(金) 午前  -Session 7B : Si IC and Circuit Technology- 11:35 - 14:15
(1)	11:35-11:50	The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation ED2010-109 SDM2010-110	○Tetsuo Endoh・Masashi Kamiyanagi・Masakazu Muraguchi・Takuya Imamoto・Takeshi Sasaki（Tohoku Univ.）
(2)	11:50-12:05	Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation ED2010-110 SDM2010-111	○Masashi Kamiyanagi・Takuya Imamoto・Takeshi Sasaki・Hyoungjun Na・Tetsuo Endoh（Tohoku Univ.）
(3)	12:05-12:20	A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process ED2010-111 SDM2010-112	○Jae-Young Park・Dae-Woo Kim・Young-San Son・Jong-Chan Ha・Jong-Kyu Song・Chang-Soo Jang・Won-Young Jung（Dongbu HiTek）
(4)	12:20-12:35	A Precision Floating-Gate Mismatch Measurement Technique for Analog Applications ED2010-112 SDM2010-113	○Won-Young Jung・Jong Min Kim・Jin-Soo Kim・Taek-Soo Kim（Dongbu HiTek）
(5)	12:35-12:50	A Physical-Based Modeling for Accurate Wide-Width LDMOS ED2010-113 SDM2010-114	○Won-Young Jung・Jong-Sub Lee・Eun-Jin Kim・Ki-Jung Park・San-Hun Kwak・Jin-Soo Kim・Taek-Soo Kim（Dongbu HiTek）
(6)	12:50-13:05	Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells ED2010-114 SDM2010-115	○Tetsuo Endoh・Yasuhiko Suzuki・Takuya Imamoto・Hyoungjun Na（Tohoku Univ.）
	13:05-14:15	昼食　（ 70分 ）
7月2日(金) 午後  -Session 8B : High Speed and High Frequency Applications 2- 14:15 - 15:30
(7)	14:15-14:30	A V-band Common-Source Low Noise Amplifier in 0.13 μm RFCMOS Technology ED2010-115 SDM2010-116	○Sung-Jin Kim・Dong-Hyun Kim・Jae-Sung Rieh（Korea Univ.）
(8)	14:30-14:45	A 0.18 um CMOS process 10-PAM transceiver for 10 Gigabit Ethernet ED2010-116 SDM2010-117	○Nayeon Cho・J K Jeong・J J Lee・J Burm（Sogang Univ.）
(9)	14:45-15:00	A Switched-Capacitor Integrator Using Dynamic Source-Follower Amplifiers ED2010-117 SDM2010-118	○Ryoto Yaguchi・Fumiyuki Adachi・Takao Waho（Sophia Univ.）
(10)	15:00-15:15	A Basic Study on RF Characteristics of Short Wavelength Comb-type Transmission Line on MMIC ED2010-118 SDM2010-119	○Jang-Hyeon Jeong・Young-Bae Park・Bo-Ra Jung・Jeong-Gab Ju・Eui-Hoon Jang・Chi-Hong Min・Seong-Il Hong・Suk-Youb Kang・Hong Seung Kim・Young Yun（Korea Maritime Univ.）
	15:15-15:30	休憩　（ 15分 ）
7月2日(金) 午後  -Session 9B : Nano-Scale devices and Physics- 15:30 - 16:40
(1)	15:30-15:45	High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance ED2010-119 SDM2010-120	○Yukihisa Nakao・Rihito Kuroda・Hiroaki Tanaka・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.）
(2)	15:45-16:00	Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET ED2010-120 SDM2010-121	○Masakazu Muraguchi・Tetsuo Endoh（Tohoku Univ./JST）
(3)	16:00-16:15	Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current ED2010-121 SDM2010-122	○Joung-eob Lee・Kwon-Chil Kang・Jung Han Lee・Kim Kyung Wan・Byung-Gook Park（Seoul National Univ.）
(4)	16:15-16:30	Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor ED2010-122 SDM2010-123	○Masakazu Muraguchi（Tohoku Univ.）・Yoko Sakurai・Yukihiro Takada・Shintaro Nomura・Kenji Shiraishi（Univ. of Tsukuba.）・Mitsuhisa Ikeda・Katsunori Makihara・Seiichi Miyazaki（Hiroshima Univ.）・Yasuteru Shigeta（Univ. of Hyogo）・Tetsuo Endoh（Tohoku Univ.）
	16:30-16:40	休憩　（ 10分 ）

問合先と今後の予定
ED	電子デバイス研究会（ED）   [今後の予定はこちら]
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SDM	シリコン材料・デバイス研究会（SDM）   [今後の予定はこちら]
	問合先	小野 行徳（NTT） Phone 046-240-2641 Fax 046-240-4317 E-: oaecl

Last modified: 2010-06-10 10:41:43