Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2010-49
［基調講演］Challenge for electromechanical logic systems using compound semiconductor heterostructures
○Hiroshi Yamaguchi・Imran Mahboob・Hajime Okamoto・Koji Onomitsu（NTT）
pp. 1 - 4
SDM2010-50
［招待講演］Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics
○Woo Young Choi（Sogang Univ.）
pp. 5 - 6
SDM2010-51
［招待講演］Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer
Young Su Kim・Min Ho Kang（National Nanofab Center）・Kang Suk Jeong（Chungnam National Univ.）・Jae Sub Oh・Dong Eun Yoo（National Nanofab Center）・Hi Deok Lee・○Ga-Won Lee（Chungnam National Univ.）
pp. 7 - 8
SDM2010-52
［招待講演］Piezoelectric material based passive RFID tags
○Hyunchul Bae・Jaekwon Kim・Jinwook Burm（Sogang Univ.）
pp. 9 - 10
SDM2010-53
［招待講演］Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors
○Masanobu Miyao（Kyushu Univ.）・Kohei Hamaya（Kyushu Univ./JST）
pp. 11 - 13
SDM2010-54
［招待講演］Toward high-efficiency thin-film solar cells using semiconducting BaSi2
○Takashi Suemasu・Mitsutaka Saito・Atsushi Okada・Katsuaki Tou・Ajimal Khan（Univ. of Tsukuba.）・Noritaka Usami（Tohoku Univ.）
pp. 15 - 19
SDM2010-55
［招待講演］Applications of Smart Cut(TM) Technologies to III-V Based Engineered Substrates
○Makoto Yoshimi（Soitec）
pp. 21 - 22
SDM2010-56
A New Cone-Type 1T DRAM Cell
○Gil Sung Lee・Doo-Hyun Kim・Jang-Gn Yun・Jung Hoon Lee・Yoon Kim・Jong-Ho Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
pp. 23 - 25
SDM2010-57
Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory
○Jong-Dae Lee・Hyun-Min Seung・Kyoung-Cheol Kwon・Jea-Gun Park（Hanyang Univ.）
pp. 27 - 30
SDM2010-58
The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure
○Guobin Wei・Yuta Goto・Akio Ohta・Katsunori Makihara・Hideki Murakami・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.）
pp. 31 - 36
SDM2010-59
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect
○Doo-Hyun Kim・Gil Sung Lee・Seongjae Cho・Jung Hoon Lee・Jang-Gn Yun・Dong Hua Li・Yoon Kim・Se Hwan Park・Won Bo Shim・Wandong Kim・Byung-Gook Park（Seoul National Univ.）
pp. 37 - 40
SDM2010-60
Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode
○Donghyun Kim・Jaewook Jeong・Yongtaek Hong（Seoul National Univ.）
pp. 41 - 42
SDM2010-61
Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer
○Young uk Song・Shun-ichiro Ohmi（Tokyo Inst. of Tech.）
pp. 43 - 46
SDM2010-62
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
○Safumi Suzuki・Kiyohito Sawada・Atsushi Teranishi・Masahiro Asada（Tokyo Inst. of Tech.）・Hiroki Sugiyama・Haruki Yokoyama（NTT）
pp. 47 - 48
SDM2010-63
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes
○Nobuhiko Tanaka・Mitsufumi Saito・Michihiko Suhara（Tokyo Metro. Univ.）
pp. 49 - 53
SDM2010-64
Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors
○Min Jin Lee・Woo Younhg Choi（Sogang Univ.）
pp. 55 - 56
SDM2010-65
A design of Novel IGBT with Oblique Trench Gate
Juhyun Oh・Dae Hwan Chun（Koria Univ.）・Eui Bok Lee（Koria Univ./KIST）・○Young Hwan Kim・Chun Keun Kim（KIST）・Byeong Kwon Ju・Man Young Sung（Koria Univ.）・Yong Tae Kim（KIST）
pp. 57 - 59
SDM2010-66
Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects
○Yong Tae Kim（KIST）・Eui Bok Lee（Koria Univ./KIST）・Young Hwan Kim・Chun Keun Kim（KIST）・Byeong Kwon Ju（Koria Univ.）
pp. 61 - 63
SDM2010-67
［招待講演］Synthesis of wafer scale graphene layer for future electronic devices
○Byung Jin Cho・Jeong Hun Mun（KAIST）
pp. 65 - 67
SDM2010-68
［招待講演］Graphene channel FET: A New Candidate for High-Speed Devices
○Tetsuya Suemitsu（Tohoku Univ.）
pp. 69 - 72
SDM2010-69
Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors
○J. S. Hwang・H. T. Kim（Korea Univ.）・J. H. Lee・D. M. Whang（Korea Univ./Sungkyunkwan Univ.）・S. W. Hwang（Korea Univ.）
pp. 73 - 74
SDM2010-70
Fabrication of InP/InGaAs DHBTs with buried SiO2 wires
○Naoaki Takebe・Takashi Kobayashi・Hiroyuki Suzuki・Yasuyuki Miyamoto・Kazuhito Furuya（Tokyo Inst. of Tech.）
pp. 75 - 79
SDM2010-71
Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs
○Yoshino K. Fukai・Kenji Kurishima・Norihide Kashio・Shoji Yamahata（NTT Photonics Labs.）
pp. 81 - 84
SDM2010-72
Electrochemical formation of InP porous structures for their application to photoelectric conversion devices
○Hiroyuki Okazaki・Taketomo Sato・Naoki Yoshizawa・Tamotsu Hashizume（Hokkaido Univ）
pp. 85 - 89
SDM2010-73
50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique
○Satoshi Tsunashima・Michihiro Hirata・Koichi Murata（NTT Corp.）
pp. 91 - 96
SDM2010-74
94-GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs
○Yong-Hyun Baek・Sang-Jin Lee・Tae-Jong Baek・Seok-Gyu Choi・Min Han・Dong-Sik Ko・Jin-Koo Rhee（Dongguk Univ.）
pp. 97 - 100
SDM2010-75
A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation
○Bongsub Song（Sogang Univ.）・Dohyung Kim（Samsung Electronics）・Jinwook Burm（Sogang Univ.）
pp. 101 - 104
SDM2010-76
RF Interconnect Technology for On-Chip and Off-Chip Communication
○Jongsun Kim（Hongik Univ.）・B. Byun・M.Frank Chang（Univ. of California）
pp. 105 - 108
SDM2010-77
［基調講演］Future perspective for the mainstream CMOS technology and their contribution to green technologies
○Hiroshi Iwai（Tokyo Inst. of Tech.）
pp. 109 - 114
SDM2010-78
［招待講演］High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
○Jungwoo Oh・J. Huang・I. Ok・S. H. Lee・P. D. Kirsch・R. Jammy・Hi-Deok Lee（SEMATECH）
pp. 115 - 118
SDM2010-79
［招待講演］III-V/Ge CMOS technologies and heterogeneous integrations on Si platform
○Shinichi Takagi・Mitsuru Takenaka（Univ. of Tokyo.）
pp. 119 - 124
SDM2010-80
［招待講演］Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport
○Masumi Saitoh・Yukio Nakabayashi（Toshiba）・Ken Uchida（Tokyo Inst. of Tech.）・Toshinori Numata（Toshiba）
pp. 125 - 129
SDM2010-81
［招待講演］Si single-dopant devices and their characterization
○Michiharu Tabe・Daniel Moraru・Earfan Hamid・Miftahul Anwar・Arief Udhiarto・Ryusuke Nakamura・Sakito Miki・Takeshi Mizuno（Shizuoka Univ.）
pp. 131 - 136
SDM2010-82
［招待講演］Investigation on fabrication of nanoscale patterns using laser interference lithography
○Jinnil Choi・Jung Ho・Ki-Young Dong・Eun-Mi Park・Byeong-Kwon Ju（Korea Univ.）
pp. 137 - 140
SDM2010-83
［招待講演］Bottom-up synthesis of metal-free elementary semiconductor nanowires
○Dongmok Whang（Sungkyunkwan Univ.）・Sung Woo Hwang（Koria Univ.）
pp. 141 - 142
SDM2010-84
Fabrication of Oxide Thin Film Transistor based on SOG dielectric and solution ZnO
○Jung Ho Park・Jinnil Choi・Seongpil Chang・Ki-Young Dong・Eun-Mi Park・Byeong-Kwon Ju（Univ. of Korea）
pp. 143 - 146
SDM2010-85
Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers
○Hyo-seong Seong・Ji-hoon Son・Woo-sung Kim・Hong-seung Kim（Korea Maritime Univ.）・Woo-seok Cheong（ETRI）・Nak-won Jang（Korea Maritime Univ.）
pp. 147 - 148
SDM2010-86
Acivation behaviour for doped Si films after laser or furnace annealing
Takashi Noguchi・○Toshiharu Suzuki（Univ. of Ryukyus）
pp. 149 - 153
SDM2010-87
Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients
○Chun-Hyung Cho・Ho-Young Cha（Hongik Univ.）
pp. 155 - 160
SDM2010-88
Fabrication of gas sensor using pd doped SnO2 nanotubes
○Ki-Young Dong・In-Sung Hwang・Dae-Jin Ham・Jinnil Choi・Jung-Ho Park・Jong-Heun Lee・Byeong-Kwon Ju（Korea Univ.）
pp. 161 - 162
SDM2010-89
Analysis of Transfer Gate in CMOS Image Sensor
○Seonghyung Park・Hyuk-Min Kwon・Jung-Deuk Bok・In-Shik Han・Woonil Choi・Hi-Deok Lee（Chungnam National Univ）
pp. 163 - 164
SDM2010-90
Interaction of bis-diethylaminosilane with hydroxylized Si (001) surface for SiO2 thin-film growth using density functional theory
○Seung-Bin Baek・Dae-Hee Kim（Korea Univ. of Tech. and Edu.）・Yong-Chan Jeong（ASM Genitech）・Yeong-Cheol Kim（Korea Univ. of Tech. and Edu.）
pp. 165 - 168
SDM2010-91
Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta2O5 gate stacks
○Hoon-Ki Lee・Jagadeesh Chandra・Kyu-Hwan Shim（Chonbuk National Univ.）・Hyung-Joong Yun・Jouhahn Lee（KBSI）・Chel-Jong Choi（Chonbuk National Univ.）
pp. 169 - 172
SDM2010-92
Modulation of PtSi work function by alloying with low work function metal
○Jun Gao・Jumpei Ishikawa・Shun-ichiro Ohmi（Tokyo Inst. of Tech.）
pp. 173 - 176
SDM2010-93
The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter
○Takeshi Sasaki・Takuya Imamoto・Tetsuo Endoh（Tohoku Univ.）
pp. 177 - 182
SDM2010-94
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface
○Xiang Li・Rihito Kuroda・Tomoyuki Suwa・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.）
pp. 183 - 188
SDM2010-95
Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities
○Akio Ohta・Daisuke Kanme・Hideki Murakami・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.）
pp. 189 - 194
SDM2010-96
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET
○Takuya Imamoto・Takeshi Sasaki・Tetsuo Endoh（Tohoku Univ.）
pp. 195 - 198
SDM2010-97
［招待講演］High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications
○Yung-Chun Wu・Min-Feng Hung・Jiang-Hung Chen・Lun-Chun Chen・Ji-Hong Jiang（National Tsing Hua Univ. Taiwan）
pp. 199 - 204
SDM2010-98
［招待講演］A Single Element Phase Transition Memory
Sang-Hyeon Lee・○Moonkyung Kim（Cornell Univ.）・Byung-ki Cheong（KIST）・Jooyeon Kim（Ulsan College）・Jo-Won Lee（National Program for Tera-level Nano Devices, Korea）・Sandip Tiwari（Cornell Univ.）
pp. 205 - 209
SDM2010-99
Impact of Floating Body type DRAM with the Vertical MOSFET
○Yuto Norifusa・Tetsuo Endoh（Tohoku Univ./JST）
pp. 211 - 216
SDM2010-100
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect
○Yoon Kim・Jang-Gn Yun・Jung Hoon Lee・Gil Sung Lee・Se Hwan Park・Jong-Ho Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
pp. 217 - 220
SDM2010-101
Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories
Akira Otake・○Keita Yamaguchi・Kenji Shiraishi（Univ. of Tsukuba.）
pp. 221 - 224
SDM2010-102
The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure
○Moon-Sik Seo（Tohoku Univ.）・Tetsuo Endoh（Tohoku Univ./JST）
pp. 225 - 230
SDM2010-103
New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells
○Seung Hyeun Roh・Woo Young Choi（Sogang Univ.）
pp. 231 - 232
SDM2010-104
［招待講演］Development of Low on-resistance SiC Trench MOSFET and other SiC power devices
○Yuki Nakano・Ryota Nakamura・Katsuhisa Nagao・Takashi Nakamura・Hidemi Takasu（ROHM）
pp. 233 - 236
SDM2010-105
Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors
○Jaegil Lee・Chun-Hyung Cho・Ho-Young Cha（Hongik Univ.）
pp. 237 - 240
SDM2010-106
［招待講演］InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD
○Makoto Miyoshi・Shigeaki Sumiya・Mikiya Ichimura・Tomohiko Sugiyama・Sota Maehara・Mitsuhiro Tanaka（NGK）・Takashi Egawa（Nagoya Inst. of Tech.）
pp. 241 - 244
SDM2010-107
A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric
○Joseph Freedsman・Arata Watanabe・Lawrence Selvaraj・Takashi Egawa（Nagoya Inst. of Tech.）
pp. 245 - 248
SDM2010-108
Characterization of deep electron levels of AlGaN grown by MOVPE
○Kimihito Ooyama（Hokkaido Univ./SMM）・Katsuya Sugawara（Hokkaido Univ.）・Hiroyuki Taketomi・Hideto Miyake・Kazumasa Hiramatsu（Mie Univ.）・Tamotsu Hashizume（Hokkaido Univ./JST）
pp. 249 - 252
SDM2010-109
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process
○Tsutomu Uesugi・Tetsu Kachi（Toyota Central R&D Labs.）・Tamotsu Hashizume（Hokkaido Univ.）
pp. 253 - 256
SDM2010-110
The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation
○Tetsuo Endoh・Masashi Kamiyanagi・Masakazu Muraguchi・Takuya Imamoto・Takeshi Sasaki（Tohoku Univ.）
pp. 257 - 262
SDM2010-111
Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
○Masashi Kamiyanagi・Takuya Imamoto・Takeshi Sasaki・Hyoungjun Na・Tetsuo Endoh（Tohoku Univ.）
pp. 263 - 267
SDM2010-112
A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process
○Jae-Young Park・Dae-Woo Kim・Young-San Son・Jong-Chan Ha・Jong-Kyu Song・Chang-Soo Jang・Won-Young Jung（Dongbu HiTek）
pp. 269 - 274
SDM2010-113
A Precision Floating-Gate Mismatch Measurement Technique for Analog Applications
○Won-Young Jung・Jong Min Kim・Jin-Soo Kim・Taek-Soo Kim（Dongbu HiTek）
pp. 275 - 278
SDM2010-114
A Physical-Based Modeling for Accurate Wide-Width LDMOS
○Won-Young Jung・Jong-Sub Lee・Eun-Jin Kim・Ki-Jung Park・San-Hun Kwak・Jin-Soo Kim・Taek-Soo Kim（Dongbu HiTek）
pp. 279 - 282
SDM2010-115
Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells
○Tetsuo Endoh・Yasuhiko Suzuki・Takuya Imamoto・Hyoungjun Na（Tohoku Univ.）
pp. 283 - 288
SDM2010-116
A V-band Common-Source Low Noise Amplifier in 0.13 μm RFCMOS Technology
○Sung-Jin Kim・Dong-Hyun Kim・Jae-Sung Rieh（Korea Univ.）
pp. 289 - 292
SDM2010-117
A 0.18 um CMOS process 10-PAM transceiver for 10 Gigabit Ethernet
○Nayeon Cho・J K Jeong・J J Lee・J Burm（Sogang Univ.）
pp. 293 - 296
SDM2010-118
A Switched-Capacitor Integrator Using Dynamic Source-Follower Amplifiers
○Ryoto Yaguchi・Fumiyuki Adachi・Takao Waho（Sophia Univ.）
pp. 297 - 300
SDM2010-119
A Basic Study on RF Characteristics of Short Wavelength Comb-type Transmission Line on MMIC
○Jang-Hyeon Jeong・Young-Bae Park・Bo-Ra Jung・Jeong-Gab Ju・Eui-Hoon Jang・Chi-Hong Min・Seong-Il Hong・Suk-Youb Kang・Hong Seung Kim・Young Yun（Korea Maritime Univ.）
pp. 301 - 302
SDM2010-120
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance
○Yukihisa Nakao・Rihito Kuroda・Hiroaki Tanaka・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.）
pp. 303 - 308
SDM2010-121
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
○Masakazu Muraguchi・Tetsuo Endoh（Tohoku Univ./JST）
pp. 309 - 313
SDM2010-122
Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current
○Joung-eob Lee・Kwon-Chil Kang・Jung Han Lee・Kim Kyung Wan・Byung-Gook Park（Seoul National Univ.）
pp. 315 - 318
SDM2010-123
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
○Masakazu Muraguchi（Tohoku Univ.）・Yoko Sakurai・Yukihiro Takada・Shintaro Nomura・Kenji Shiraishi（Univ. of Tsukuba.）・Mitsuhisa Ikeda・Katsunori Makihara・Seiichi Miyazaki（Hiroshima Univ.）・Yasuteru Shigeta（Univ. of Hyogo）・Tetsuo Endoh（Tohoku Univ.）
pp. 319 - 324
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