6月24日(水) 午後 Plenary session (Room Jungwon)
13:00 - 13:50 |
| (1) |
13:00-13:10 |
Opening Remark |
| (2) |
13:10-13:50 |
[Keynote] A perspective on silicon industry : challenges and opportunities
S. Y. Choi (Samsung Electronics) |
| |
13:50-14:00 |
休憩 （ 10分 ） |
6月24日(水) 午後 Session 1A Power Devices & Circuits (Room Jungwon)
14:00 - 18:00 |
| (3) |
14:00-14:30 |
［招待講演］CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband  ED2009-50 SDM2009-45 |
○Toshihide Suzuki・Yoichi Kawano（Fujitsu/Fujitsu Labs.）・Masaru Sato（Fujitsu Labs.）・Yasuhiro Nakasha・Tatsuya Hirose（Fujitsu/Fujitsu Labs.）・Naoki Hara（Fujitsu Labs.）・Kazukiyo Joshin（Fujitsu/Fujitsu Labs.） |
| (4) |
14:30-15:00 |
［招待講演］Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits ED2009-51 SDM2009-46 |
○Shoji Ikeda（Tohoku Univ.）・Jun Hayakawa（Hitachi, Ltd.）・Huadong Gan・Kotaro Mizumuma・Ji Ho Park（Tohoku Univ.）・Hiroyuki Yamamoto・Katsuya Miura（Hitachi, Ltd./Tohoku Univ.）・Haruhiro Hasegawa・Ryutaro Sasaki・Toshiyasu Meguro（Tohoku Univ.）・Kenchi Ito（Hitachi, Ltd.）・Fumihiro Matsukura・Hideo Ohno（Tohoku Univ.） |
| (5) |
15:00-15:15 |
Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit ED2009-52 SDM2009-47 |
○Masashi Kamiyanagi・Fumitaka Iga・Shoji Ikeda（Tohoku Univ.）・Katsuya Miura（Tohoku Univ./Hitachi）・Jun Hayakawa（Hitachi）・Haruhiro Hasegawa・Takahiro Hanyu・Hideo Ohno・Tetsuo Endoh（Tohoku Univ.） |
| (6) |
15:15-15:30 |
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits ED2009-53 SDM2009-48 |
○Fumitaka Iga・Masashi Kamiyanagi・Shoji Ikeda（Tohoku Univ.）・Katsuya Miura（Tohoku Univ./Hitachi）・Jun Hayakawa（Hitachi）・Haruhiro Hasegawa・Takahiro Hanyu・Hideo Ohno・Tetsuo Endoh（Tohoku Univ.） |
| |
15:30-16:00 |
休憩 （ 30分 ） |
| (7) |
16:00-16:15 |
Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System. ED2009-54 SDM2009-49 |
○Jae-Young Park・Jong-Kyu Song・Dae-Woo Kim・Chang-Soo Jang・Won-Young Jung・Taek-Soo Kim（Dongbu HiTek） |
| (8) |
16:15-16:30 |
Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation ED2009-55 SDM2009-50 |
○Tetsuo Endoh・Hyoungjun Na（Tohoku Univ.） |
| (9) |
16:30-16:45 |
A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-um Si RFCMOS Technology ED2009-56 SDM2009-51 |
○Seung-Woo Seo・Jae-Sung Rieh（Korea Univ.） |
| (10) |
16:45-17:00 |
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies ED2009-57 SDM2009-52 |
○Kenichi Abe・Takafumi Fujisawa・Akinobu Teramoto・Syunichi Watabe・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.） |
| (11) |
17:00-17:15 |
A 0.18um CMOS over 10 Gb/s 10-PAM Serial Link Receiver ED2009-58 SDM2009-53 |
○Jeongjun Lee・Jikyung Jeong・Jinwook Burm（Sogang University） |
| (12) |
17:15-17:30 |
A CMOS 12.8 Gb/s 10-PAM transmitter for chip-to-chip communication ED2009-59 SDM2009-54 |
○Jikyung Jeong・Jeongjun Lee・Jinwook Burm（Sogang University） |
| (13) |
17:30-17:45 |
Fundamental study of a composite right/left-handed transmission line with self-multiplexed properties toward functional wireless interconnects ED2009-60 SDM2009-55 |
○Sadaharu Ito・Michihiko Suhara（Tokyo Metro Univ.） |
| (14) |
17:45-18:00 |
Fabrication of copper pillar tin bump (CPTB) for high density chip interconnect technology
O. C. Chung, J. M. Lee, J. K. Kim, S. J. Hong, I. W. Cho (Myongji Univ.) |
6月24日(水) 午後 Session 1B Emerging Devices I (Room Namwon)
14:00 - 18:00 |
| (15) |
14:00-14:30 |
［招待講演］Metrology of microscopic properties of graphene on SiC ED2009-61 SDM2009-56 |
○Masao Nagase・Hiroki Hibino・Hiroyuki Kageshima・Hiroshi Yamaguchi（NTT BRL） |
| (16) |
14:30-15:00 |
［招待講演］Theoretical study on graphene field-effect transistors ED2009-62 SDM2009-57 |
○Eiichi Sano（Hokkaido Univ./JST）・Taiichi Otsuji（Tohoku Univ../JST） |
| (17) |
15:00-15:30 |
［招待講演］
A nanotube and nanowire integrated sensor array for the detection of multiple hazardous gases
J. W. Lee*, K. Y. Dong*, Y. M. Park*, K. S. Lee*, J. Choi*, J. H. Lee*, H. H. Choi**, S. D.
Kim***, E. K. Kim†, B. K. Ju* (*Korea Univ., **Yonsei Univ., ***KETI, †Seoul National Univ. of Technology) |
| |
15:30-16:00 |
休憩 （ 30分 ） |
| (18) |
16:00-16:15 |
Characteristics of organic field-effect-transistor with high dielectric constant layer |
○S. Lee・Y. J. Choi・J. Park・K. Y. Ko・I.. S. Park・J. Ahn（Hanyang Univ.） |
| (19) |
16:15-16:30 |
Electrical characteristics of OFETs with thin gate dielectric ED2009-63 SDM2009-58 |
○Young-uk Song・Shun-ichiro Ohmi・Hiroshi Ishiwara（Tokyo Inst. of Tech.） |
| (20) |
16:30-16:45 |
Design of 30nm FinFET with Halo Structure ED2009-64 SDM2009-59 |
○Tetsuo Endoh・Koji Sakui・Yukio Yasuda（Tohoku Univ../JST-CREST） |
| (21) |
16:45-17:00 |
Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier. ED2009-65 SDM2009-60 |
○Joung-eob Lee・Kwon-Chil Kang・Jung-Han Lee・Byung-Gook Park（Seoul National Univ.） |
| (22) |
17:00-17:15 |
Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant Bump ED2009-66 SDM2009-61 |
○Lijing Qiu（Kyushu Univ.）・Naoya Watanabe（Fukuoka-IST）・Tanemasa Asano（Kyushu Univ.） |
| (23) |
17:15-17:30 |
A new Combination of RSD and Inside Spacer Thin Film Transistor ED2009-67 SDM2009-62 |
○M. J. Chang・T. C. Li・F. T. Chien（Feng Chia Univ.）・C. N. Liao・Y. T. Tsai（National Central Univ.） |
| (24) |
17:30-17:45 |
Gate-all-around tunnel field-effect transistor (GAA TFET) with vertical channel and n-doped layer
D. S. Lee, H. S. Yang, K. C. Kang, J. E. Lee, J. H. Lee, B. G. Park (Seoul National Univ.) |
| (25) |
17:45-18:00 |
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor ED2009-69 SDM2009-64 |
○Jin Kwan Kim（KAIST）・Keedong Yang（i3system Conp.）・Yong Soo Lee（KAIST）・Hee Chul Lee（KAIST/National Nanofab Center） |
6月25日(木) 午前 Session 2A Compound Semiconductor Devices (Room Jungwon)
08:30 - 13:30 |
| (26) |
08:30-09:00 |
［招待講演］Electron Devices Based on GaN and Related Nitride Semiconductors ED2009-70 SDM2009-65 |
○Masaaki Kuzuhara（Univ. of Fukui） |
| (27) |
09:00-09:30 |
［招待講演］InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility ED2009-71 SDM2009-66 |
○Masanobu Hiroki・Narihiko Maeda・Takashi Kobayashi・Naoteru Shigekawa（NTT PH Labs.） |
| (28) |
09:30-10:00 |
［招待講演］InGaAs/InP MISFET with epitaxially grown source ED2009-72 SDM2009-67 |
○Yasuyuki Miyamoto・Toru Kanazawa・Hisashi Saito・Kazuhito Furuya（Tokyo Inst. of Tech.） |
| (29) |
10:00-10:30 |
［招待講演］
Effect of contact resistance on the performance of a-IGZO thin film transistors
S. Y. Lee (KIST) |
| |
10:30-10:45 |
休憩 （ 15分 ） |
| (30) |
10:45-11:00 |
4H-SiC Avalanche Photodiodes for 280 nm UV Detection. ED2009-73 SDM2009-68 |
○B. R. Park・H. Sung・Chun-Hyung Cho（Hongik Univ.）・P. M. Sandvik（GE）・Ho-Young Cha（Hongik Univ.） |
| (31) |
11:00-11:15 |
Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition ED2009-74 SDM2009-69 |
○Kimihito Ooyama（Hokkaido Univ/Sumitomo Metal Mining）・Chihoko Mizue・Yujin Hori・Tamotsu Hashizume（Hokkaido Univ.） |
| (32) |
11:15-11:30 |
InP Gunn diodes with shallow-barrier Schottky contacts. ED2009-75 SDM2009-70 |
○M. R. Kim・J. K. Rhee・S. D. Lee・Y. S. Chae・S. K. Sharma・A. Kathalingam・C. W. Lee・H. J. Lim（Dongguk Univ.）・J. H. Choi・W. J. Kim（Agency for Defense Development） |
| (33) |
11:30-11:45 |
Formation and application of InP porous structures on p-n substrates ED2009-76 SDM2009-71 |
○Taketomo Sato・Naoki Yoshizawa・Hiroyuki Okazaki・Tamotsu Hashizume（Hokkaido Univ.） |
| (34) |
11:45-12:00 |
A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer ED2009-77 SDM2009-72 |
○Y. J. Chen・T. C. Li・F. T. Chien（Feng Chia Univ.）・C. N. Liao・Y. T. Tsai（National Central Univ.） |
| (35) |
12:00-12:15 |
Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network ED2009-78 SDM2009-73 |
○Seiya Kasai（Hokkaido Univ./PRESTO JST）・Tetsuya Asai・Yuta Shiratori・Daisuke Nakata（Hokkaido Univ.） |
| (36) |
12:15-12:30 |
Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector ED2009-79 SDM2009-74 |
○Yasuyuki Miyamoto・Shinnosuke Takahashi・Takashi Kobayashi・Hiroyuki Suzuki・Kazuhito Furuya（Tokyo Inst. of Tech.） |
| (37) |
12:30-12:45 |
Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission ED2009-80 SDM2009-75 |
○Toshihiro Itoh・Kimikazu Sano・Hiroyuki Fukuyama・Koichi Murata（NTT） |
| (38) |
12:45-13:00 |
Characteristics of GaN p-n diodes fabricated on a free-standing GaN substrate
T. Uesugi*, N. Soejima*, T. Kachi*, T. Hashizume** (*Toyota Central R&D Labs, **Hokkaido
Univ.) |
| (39) |
13:00-13:15 |
Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces ED2009-81 SDM2009-76 |
○J. H. Ahn（Korea University）・J. H. Lee・T. W. Koo（Sungkyunkwan Univ/Korea University）・M. G. Kang（Korea University）・D. M. Whang（Sungkyunkwan Univ/Korea University）・S. W. Hwang（Korea University） |
| (40) |
13:15-13:30 |
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN ED2009-82 SDM2009-77 |
○Ji-Ho Park・Hiroshi Okada・Akihiro Wakahara・Yuzo Furukawa（Toyohashi Univ. of Tech.）・Yong-Tae Kim（Dankook Univ.）・Jonghan Song（KIST）・Ho-Jung Chang（Dankook Univ.）・Shin-ichiro Sato・Takeshi Ohshima（JAEA, Takasaki） |
6月25日(木) 午前 Session 2B Silicon & Bio-Devices (Room Namwon)
09:00 - 13:15 |
| (41) |
09:00-09:30 |
［招待講演］Novel-Functional Single-Electron Devices Using Silicon Nanodot Array ED2009-83 SDM2009-78 |
○Yasuo Takahashi・Takuya Kaizawa・Mingyu Jo・Masashi Arita（Hokkaido Univ.）・Akira Fujiwar・Yukinori Ono（NTT）・Hiroshi Inokawa（Shizuoka Univ.）・Jung-Bum Choi（Chungbuk National Univ.） |
| (42) |
09:30-10:00 |
［招待講演］MOS Transistors fabricated on Si(551) surface based on radical reaction processes ED2009-84 SDM2009-79 |
○Akinobu Teramoto・Weitao Cheng・Chingfoa Tye・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.） |
| (43) |
10:00-10:30 |
［招待講演］
Dielectrophoresis based cell separation technique for high throughput, purity
J. Y. Park (Sogang Univ.) |
| |
10:30-10:45 |
休憩 （ 15分 ） |
| (44) |
10:45-11:15 |
［招待講演］
Transport through DNA molecules and possible applications to future devices
J. S. Hwang*, D. Ahn**, S. W. Hwang* (*Korea Univ., **Univ. of Seoul) |
| (45) |
11:15-11:45 |
［招待講演］
MEMS for bio-medical applications in Malaysia
B. Y. Majlis (Univ. Kebangsaan Malaysia) |
| (46) |
11:45-12:00 |
Effective Annealing for Si film ED2009-85 SDM2009-80 |
○Takashi Noguchi・Tomoyuki Miyahira・Yeh Chen・Jean de dieu Mugiraneza（Univ. of Ryukyus） |
| (47) |
12:00-12:15 |
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy ED2009-86 SDM2009-81 |
○Tomoyuki Suwa（Tohoku Univ.）・Takashi Aratani（Shin-Etsu Chemical）・Masaaki Higuchi（TOSHIBA）・Sigetoshi Sugawa（Tohoku Univ.）・Eiji Ikenaga（JASRI）・Jiro Ushio（Hitachi）・Hiroshi Nohira（Musashi Inst. of Tech.）・Akinobu Teramoto・Tadahiro Ohmi・Takeo Hattori（Tohoku Univ.） |
| (48) |
12:15-12:30 |
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor ED2009-87 SDM2009-82 |
○Hideki Murakami・Syed Mahboob・Kiyotaka Katayama・Katsunori Makihara・Mitsuhisa Ikeda・Yumehiro Hata・Akio Kuroda・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.） |
| (49) |
12:30-12:45 |
Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages ED2009-88 SDM2009-83 |
○C. H. Cho・H. Y. Cha（Hongik Univ.） |
| (50) |
12:45-13:00 |
Study on Quantum Electro-Dynamics in Vertical MOSFET ED2009-89 SDM2009-84 |
○Masakazu Muraguchi・Tetsuo Endoh（Tohoku Univ./JST-CREST） |
| (51) |
13:00-13:15 |
Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET ED2009-90 SDM2009-85 |
○Tetsuo Endoh・Koji Sakui・Yukio Yasuda（Tohoku Univ./JST-CREST） |
6月26日(金) 午前 Session 3A Emerging Devices II (Room Jungwon)
08:30 - 12:15 |
| (52) |
08:30-09:00 |
［招待講演］
Solution-processed transparent conductive film and its applications
Y. T. Hong, M. K. Kwon, P. K. Nayak, J. H. Yang (Seoul National Univ.) |
| (53) |
09:00-09:30 |
［招待講演］Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor ED2009-91 SDM2009-86 |
○Taizoh Sadoh・Takanori Tanaka・Yasuharu Ohta・Kaoru Toko・Masanobu Miyao（Kyushu Univ.） |
| (54) |
09:30-10:00 |
［招待講演］
Si:Ge alloy nanowire optoelectronics
C. J. Kim, H. S. Lee, K. B. Kang, M. H. Cho (Postech) |
| (55) |
10:00-10:30 |
［招待講演］
Overview of technology progress in advanced gate stack for CMOS application and its
reliability issues
R. Choi (Inha Univ.) |
| |
10:30-10:45 |
休憩 （ 15分 ） |
| (56) |
10:45-11:15 |
［招待講演］
Physical understanding of temperature dependent band gap energies in InAs nanostructures
O. S. Kopylov*†, M. H. Abdellatif†, J. D. Song†, W. J. Choi†, N. K. Cho†, J. I. Lee† (*National
Technical Univ. of Ukraine, †KIST) |
| (57) |
11:15-11:30 |
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots ED2009-92 SDM2009-87 |
○Katsunori Makihara・Mitsuhisa Ikeda・Akira Kawanami・Seiichi Miyazaki（Hiroshima Univ.） |
| (58) |
11:30-11:45 |
Fabrication of Silicon nanowire FET using transfer technology |
○W. H. Kim（Korea Electronics Technology Institute） |
| (59) |
11:45-12:00 |
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot ED2009-93 SDM2009-88 |
○Masakazu Muraguchi（Tohoku Univ.）・Yukihiro Takada・Shintaro Nomura（Univ. of Tsukuba.）・Tetsuo Endoh（Tohoku Univ.）・Kenji Shiraishi（Univ. of Tsukuba.） |
| (60) |
12:00-12:15 |
Fabrication of double-dot single-electron transistor in silicon nanowire ED2009-94 SDM2009-89 |
○Mingyu Jo・Takuya Kaizawa・Masashi Arita（Hokkaido Univ.）・Akira Fujiwara・Yukinori Ono（NTT）・Hiroshi Inokawa（Shizuoka Univ.）・Jung-Bum Choi（Chungbuk National Univ.）・Yasuo Takahashi（Hokkaido Univ.） |
6月26日(金) 午前 Session 3B Memory Devices(Room Namwon)
09:00 - 12:00 |
| (61) |
09:00-09:30 |
［招待講演］
SONOS-type flash memory with thin HfO2 as trapping layer using atomic layer deposition
J. S. Oh*, K. I. Choi*, D. H. Nam*, Y. S. Kim*, M. H. Kang*, M. H. Song*, S. K. Lim*, D. E.
Yoo*, S. S. Park*, J. S. Kim**, Y. C. Park**, H. D. Lee*, G. W. Lee* (*Chungnam National Univ.,
**National Nanofab Center) |
| (62) |
09:30-10:00 |
［招待講演］Future High Density Memory with Vertical Structured Device Technology ED2009-95 SDM2009-90 |
○Tetsuo Endoh（Tohoku Univ.） |
| (63) |
10:00-10:15 |
Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory. ED2009-96 SDM2009-91 |
○Yoon Kim・Seongjae Cho・Jang-Gn Yun・Il Han Park・Gil Sung Lee・Doo-Hyun Kim・Dong Hua Li・Se Hwan Park・Wandong Kim・Wonbo Shim・Byung-Gook Park（Seoul National Univ.） |
| (64) |
10:15-10:30 |
Architecture and verification of the row chain cell array for polymer random access memory ED2009-97 SDM2009-92 |
○Jung ha Kim・Chang yong Ahn・Sang sun Lee（Hanyang Univ.） |
| |
10:30-11:00 |
休憩 （ 30分 ） |
| (65) |
11:00-11:15 |
Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al2O3 and SiO2 stacked tunneling layers. ED2009-98 SDM2009-93 |
○H. W. Kim・D. H. Kim・J. H. You・T. W. Kim（Hanyang Univ.） |
| (66) |
11:15-11:30 |
Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time ED2009-99 SDM2009-94 |
○Woojun Lee・Woo Young Choi（Sogang Univ.） |
| (67) |
11:30-11:45 |
Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions ED2009-100 SDM2009-95 |
○J. W. Lee・J. H. You・S. H. Jang・K. D. Kwack・T. W. Kim（Hanyang Univ.） |
| (68) |
11:45-12:00 |
Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. ED2009-101 SDM2009-96 |
○Seongjae Cho・Jung Hoon Lee・Yun Kim・Jang-Gn Yun・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.） |
6月26日(金) 午後 Closing Session
12:30 - 13:00 |
| (69) |
12:30-13:00 |
Closing Remark |
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