Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2008-58
[Keynote Address]
III-V Semiconductor Epitaxial Nanowires and Their Applications
Takashi Fukui, Shinjiro Hara, Kenji Hiruma, Junichi Motohisa (Hokkaido Univ.)
p. 1
SDM2008-59
[Invited Talk]
Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration
Toshi-kazu Suzuki (JAIST)
pp. 3 - 8
SDM2008-60
[Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer
Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.)
pp. 9 - 14
SDM2008-61
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition
Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.)
pp. 15 - 19
SDM2008-62
[Invited Talk]
Guidelines for the Threshold Voltage Control of Metal/HfSiON system
Akira Nishiyama, Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Junji Koga, Masato Koyama (Toshiba)
pp. 21 - 24
SDM2008-63
[Invited Talk]
Precise Ion Implantation for Advanced MOS LSIs
Toshiharu Suzuki (SEN)
pp. 25 - 30
SDM2008-64
[Invited Talk]
Quantum Modeling of Carrier Transport through Silicon Nano-devices
Nobuya Mori, Hideki Minari (Osaka Univ.)
pp. 31 - 36
SDM2008-65
[Invited Talk]
High-K Dielectric for Charge Trap-type Flash Memory Application
Byung-Jin Cho (KAIST), Wei He, Jing Pu (National Univ. of Singapore)
pp. 37 - 41
SDM2008-66
Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors
Han-A Jung, Ki-Heung Park (Kyungpook National Univ.), Hyuck-In Kwon (Daegu Univ. Jillyang), Jong-Ho Lee (Kyungpook National Univ.)
pp. 43 - 46
SDM2008-67
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation
Hiroshi Imai (Tohoku Univ.), Masahiko Sugimura, Masafumi Kawasaki (Zeon), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 47 - 51
SDM2008-68
[Invited Talk]
Characterization of Carbon Nanotube FETs by Electric Force Microscopy
Takashi Mizutani (Nagoya Univ.)
pp. 53 - 58
SDM2008-69
[Invited Talk]
Recent Progress on Nanoprobe and Nanoneedle
Masaki Tanemura, Masashi Kitazawa, Yoshitaka Sugita, Ako Miyawaki, Masaki Kutsuna, Yasuhiko Hayashi (Nagoya Inst. of Tech.), Shu Ping Lau (Nanyang Tech. Univ.)
pp. 59 - 64
SDM2008-70
[Invited Talk]
Technical Issues and Applications of Printed Thin-Film Devices
Yongtaek Hong, Jaewook Jeong, Jinwoo Kim, Sanbwoo Kim, Minkyoo Kwon, Seungjun Chung (Seoul National Univ.)
pp. 65 - 68
SDM2008-71
[Invited Talk]
A Ta2O5 Solid-electrolyte Switch with Improved Reliability
Naoki Banno, Toshitsugu Sakamoto, Noriyuki Iguchi, Shinji Fujieda (NEC Corp.), Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono (NIMS)
pp. 69 - 72
SDM2008-72
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation
Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.)
pp. 73 - 76
SDM2008-73
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.)
pp. 77 - 80
SDM2008-74
Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories
Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.)
pp. 81 - 84
SDM2008-75
3-dimensional Terraced NAND(3D TNAND) Flash Memory
Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)
pp. 85 - 88
SDM2008-76
Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure
Sang-Su Park, Se Woong Oh, Kyeong Rok Kim, Hyun Joo Kim, Tae Whan Kim, Kae Dal Kwack (Hanyang Univ.)
pp. 89 - 93
SDM2008-77
Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL)
Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.)
pp. 95 - 99
SDM2008-78
Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor
Tetsuo Endoh, Kousuke Tanaka, Yuto Norifusa (Tohoku Univ.)
pp. 101 - 105
SDM2008-79
Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.)
pp. 107 - 111
SDM2008-80
Current Transport Characteristics for Organic Nonvolatile Memories
Woo-Sik Nam, Gon-Sub Lee, Sung-Ho Seo, Young-Hwan Oh, Jae-Gun Park (Hanyang Univ.)
pp. 113 - 117
SDM2008-81
Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi (NTT)
pp. 119 - 124
SDM2008-82
Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors
Yoo Chul Kim, Keum-Dong Jung, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.)
pp. 125 - 128
SDM2008-83
Self-Aligned Conducting Polymer Patterns Coated with Carbon Nanotube Using Soft Lithography for Transparent Flexible Electrode of OTFT
Jin-Woo Huh, Jin-Woo Huh, Jin-Wook Jeong, Ho-Gyu Yoon (Korea Univ.), Sang Ho Kim (LG Chem.), Byeong-Kwon Ju (Korea Univ.)
pp. 129 - 133
SDM2008-84
Self-Assembled Carbon Nanotube Network Films Field Effect Transistor for Biosensor Application
Sunhaera Shin, Youn-Kyoung Baek, Yang-Kyu Choi, Hee-Tae Jung (KAIST)
pp. 135 - 137
SDM2008-85
2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network
Hong-Quan Zhao (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST), Tamotsu Hashizume (Hokkaido Univ.)
pp. 139 - 144
SDM2008-86
Fabrication of Silicon Nanowire Devices using AC Dielectrophoresis
Su-Heon Hong, Myung-Gil Kang (Korea Univ.), Dong-Mok Whang (Sungkyunkwan Univ.), Sung-Woo Hwang (Korea Univ.)
pp. 145 - 148
SDM2008-87
A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications
Hyeok Jun Son, Il Woong Kwon (KAIST), Ho Jun You (ETRI), Yong Soo Lee, Hee Chul Lee (KAIST)
pp. 149 - 154
SDM2008-88
Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces
S. Mahboob, Katsunori Makihara, Hirotaka Kaku, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki, Akio Kuroda (Hiroshima Univ.)
pp. 155 - 158
SDM2008-89
An Insect Vision-based Single-electron Circuit Performing Motion Detection
Andrew Kilinga Kikombo, Tetsuya Asai, Yoshihito Amemiya (Hokkaido univ.)
pp. 159 - 164
SDM2008-90
[Invited Talk]
SiC Power Transistor and Its Application for DC/DC Converter
Makoto Kitabatake (Matsushita Electric Industrial)
pp. 165 - 169
SDM2008-91
[Invited Talk]
Recent Advances on GaN Vertical Power Device
Tetsu Kachi (Toyota Central R&D Labs., Inc.)
pp. 171 - 175
SDM2008-92
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial)
pp. 177 - 181
SDM2008-93
Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET
Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ. of Sci. and Tech.), Yao-Tsung Tsai (National Central Univ.)
pp. 183 - 186
SDM2008-94
The Analysis of the Floating Field Limiting Ring and Field Plate
Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien, Ching-Hwa Cheng (Feng Chia Univ.), Yao-Tsung Tsai (National Central Univ.)
pp. 187 - 191
SDM2008-95
A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology
Jae-Young Park, Jong-Kyu Song, Chang-Soo Jang, Joon-Tae Jang, San-Hong Kim, Sung-Ki Kim, Taek-Soo Kim (Dongbu HiTek)
pp. 193 - 197
SDM2008-96
[Invited Talk]
Millimeter-wave MMIC Technologies for F-band Application
Toshihiko Kosugi, Akihiko Hirata, Koichi Murata, Naoya Kukutsu, Yuichi Kado, Takatomo Enoki (NTT)
pp. 199 - 204
SDM2008-97
[Invited Talk]
Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Nano-Transistors
Taiichi Otsuji (Tohoku Univ.)
pp. 205 - 210
SDM2008-98
Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter
HyunChul Kang, Takuya Nishimura, Taiichi Otsuji (Tohoku Univ.), Naoya Watanabe, Tanemasa Asano (Kyushu Univ.)
pp. 211 - 215
SDM2008-99
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
Takuya Nishimura, Nobuhiro Magome, HyunChul Kang, Taiichi Otsuji (Tohoku Univ.)
pp. 217 - 220
SDM2008-100
Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications
Sooyeon Kim, Yongho Oh, Jae-Sung Rieh (Korea Univ.)
pp. 221 - 226
SDM2008-101
Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop
Tetsuo Endoh, Masashi Kamiyanagi (Tohoku Univ.)
pp. 227 - 231
SDM2008-102
Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations
Masashi Kamiyanagi, Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.)
pp. 233 - 238
SDM2008-103
Implementation of Channel Thermal Noise Model in CMOS RFIC Design
Jongwook Jeon, Ickhyun Song, Hyungcheol Shin (Seoul National Univ.)
pp. 239 - 242
SDM2008-104
CMOS Digitally Controlled Programmable Gain Amplifier (PGA) with DC Offset Cancellation
Kyunghoon Kim, Jinwook Burn (Sogang Univ.)
pp. 243 - 248
SDM2008-105
CMOS phase shift Oscillator Using the Conduction of Heat
Takaaki Hirai, Tetsuya Asai, Yoshihito Amemiya (Hokkaido univ.)
pp. 249 - 252
SDM2008-106
Chip Design of a Successive Approximation A/D Converter for Structure Monitoring System
Jae-Woon Kim, Jinwook Burm (Sogang Univ.)
pp. 253 - 257
SDM2008-107
Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Application
Jun-Gyu Lee, Bae-Ki Jung, Jinwook Burm (Sogang Univ.)
pp. 259 - 264
SDM2008-108
The Data Analysis Technique of the Atomic Force Microscopy for the Atomically Flat Silicon Surface
Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi (Tohoku Univ.)
pp. 265 - 269
SDM2008-109
Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4
Hirotaka Kaku, Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
pp. 271 - 274
SDM2008-110
Study on Gate Around Transistor (GAT) Layout for Radiation Hardness
Min-su Lee, Young-Soo Lee, Chul-Bum Kim, Young-Ho Kim (KAIST), Byoung-Gon Yu, Hee Chul Lee (ETRI)
pp. 275 - 280
SDM2008-111
Low Power Pixel-Level ADC for a Micro-Bolometer
Dong-Heon Ha, Chi Ho Hwang (KAIST), Woo Seok Yang (ETRI), Yong Soo Lee, Hee Chul Lee (KAIST)
pp. 281 - 284
SDM2008-112
A 425 MHz Narrow Channel Spacing Frequency Synthesizer
Younwoong Chung, Junan Lee, Jinwook Burm (Sogang Univ)
pp. 285 - 290
SDM2008-113
A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltge Mixed-Mode Systems
Oh Jun Kwon, Kae DalKwack (Hanyang Univ.)
pp. 291 - 293
SDM2008-114
A Novel 900mV Single-Stage Class-AB Amplifier for a Σ-Δ Modulator with the Switched-OPamp Technique
Oh Jun Kwon, Kae Dal Kwack (Hanyang Univ.)
pp. 295 - 299
SDM2008-115
24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization
Ickhyun Song, Hakchul Jung, Hee-Sauk Jhon, Minsuk Koo, Hyungcheol Shin (Seoul National Univ.)
pp. 301 - 304
SDM2008-116
Reduced Branch-Line Coupler Using Eight Two-Step Stubs for W-Band Application of MMIC
Tae-Jong Baek, Sang-Jin Lee, Min Han, Jin-Koo Rhee (Dongguk Univ.)
pp. 305 - 308
SDM2008-117
W-band Single Balanced Mixer using High Performance Dot Schottky Diode
Sang-Jin Lee, Jung-Hun Oh, Tae-Jong Baek, Mun-Kyo Lee, Dong-Sic Ko, Du-Hyun Ko, Hyun-Chang Park, Jin-Koo Rhee (Dongguk Univ.)
pp. 309 - 312
SDM2008-118
SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application
Jae-Kwon Kim, Kyunghwan Kim, Jinwook Burn (Sogang Univ.)
pp. 313 - 316
SDM2008-119
Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes
M. R. Kim, S. D. Lee, J. S. Lee, N. S. Kwak, S. D. Kim, J. K. Rhee (Dongguk Univ.), W. J. Kim (ADD)
pp. 317 - 320
SDM2008-120
Design Consideration of High Power LED Arrays for Backlight Unit Applications
Bong-Ryeol Park, Ho-Young Cha (Hongik Univ.)
pp. 321 - 325
SDM2008-121
Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors
Akinori Mizohata, Naoki Yoshizawa, Taketomo Sato, Tamotsu Hashizume (Hokkaido Univ.)
pp. 327 - 330
SDM2008-122
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire
Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.)
pp. 331 - 335
SDM2008-123
Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Hironari Chikaoka, Youichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui)
pp. 337 - 340
SDM2008-124
AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD
Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry)
pp. 341 - 345
SDM2008-125
Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion
Takeshi Kimura, Tamotsu Hashizume (Hokkaido Univ.)
pp. 347 - 350
SDM2008-126
Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching
Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.)
pp. 351 - 355
SDM2008-127
Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition
Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 357 - 361
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.