Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2006] | [2007] | [2008] | [2009] | [2010] | [2011] | [2012] | [Japanese] / [English]
SDM2008-58
［基調講演］III-V Semiconductor Epitaxial Nanowires and Their Applications
○Takashi Fukui・Shinjiro Hara・Kenji Hiruma・Junichi Motohisa（Hokkaido Univ.）
p. 1
SDM2008-59
［招待講演］Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration
○Toshi-kazu Suzuki（JAIST）
pp. 3 - 8
SDM2008-60
［招待講演］AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer
○Tadayoshi Deguchi（New Japan Radio）・Takashi Egawa（Nagoya Inst. of Tech.）
pp. 9 - 14
SDM2008-61
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition
○Hyeong-Seon Yun・Ka-Lam Kim・No-Won Kwak・Woo-Seok Lee・Sang-Hyun Jeong（Cheongju Univ.）・Ju-Ok Seo（Itswell）・Kwang-Ho Kim（Cheongju Univ.）
pp. 15 - 19
SDM2008-62
［招待講演］Guidelines for the Threshold Voltage Control of Metal/HfSiON system
○Akira Nishiyama・Yoshinori Tsuchiya・Masahiko Yoshiki・Atsuhiro Kinoshita・Junji Koga・Masato Koyama（Toshiba）
pp. 21 - 24
SDM2008-63
［招待講演］Precise Ion Implantation for Advanced MOS LSIs
○Toshiharu Suzuki（SEN）
pp. 25 - 30
SDM2008-64
［招待講演］Quantum Modeling of Carrier Transport through Silicon Nano-devices
○Nobuya Mori・Hideki Minari（Osaka Univ.）
pp. 31 - 36
SDM2008-65
［招待講演］High-K Dielectric for Charge Trap-type Flash Memory Application
○Byung-Jin Cho（KAIST）・Wei He・Jing Pu（National Univ. of Singapore）
pp. 37 - 41
SDM2008-66
Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors
○Han-A Jung・Ki-Heung Park（Kyungpook National Univ.）・Hyuck-In Kwon（Daegu Univ. Jillyang）・Jong-Ho Lee（Kyungpook National Univ.）
pp. 43 - 46
SDM2008-67
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation
○Hiroshi Imai（Tohoku Univ.）・Masahiko Sugimura・Masafumi Kawasaki（Zeon）・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.）
pp. 47 - 51
SDM2008-68
［招待講演］Characterization of Carbon Nanotube FETs by Electric Force Microscopy
○Takashi Mizutani（Nagoya Univ.）
pp. 53 - 58
SDM2008-69
［招待講演］Recent Progress on Nanoprobe and Nanoneedle
○Masaki Tanemura・Masashi Kitazawa・Yoshitaka Sugita・Ako Miyawaki・Masaki Kutsuna・Yasuhiko Hayashi（Nagoya Inst. of Tech.）・Shu Ping Lau（Nanyang Tech. Univ.）
pp. 59 - 64
SDM2008-70
［招待講演］Technical Issues and Applications of Printed Thin-Film Devices
○Yongtaek Hong・Jaewook Jeong・Jinwoo Kim・Sanbwoo Kim・Minkyoo Kwon・Seungjun Chung（Seoul National Univ.）
pp. 65 - 68
SDM2008-71
［招待講演］A Ta2O5 Solid-electrolyte Switch with Improved Reliability
○Naoki Banno・Toshitsugu Sakamoto・Noriyuki Iguchi・Shinji Fujieda（NEC Corp.）・Kazuya Terabe・Tsuyoshi Hasegawa・Masakazu Aono（NIMS）
pp. 69 - 72
SDM2008-72
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation
○Sang Hyuk Park・Sangwoo Kang・Dong-Seup Lee・Jung Han Lee・Hong-Seon Yang・Kwon-Chil Kang・Joung-Eob Lee・Jong Duk Lee・Byung-Gook Park（Seoul National Univ.）
pp. 73 - 76
SDM2008-73
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
○Kazuhiro Shimanoe・Katsunori Makihara・Mitsuhisa Ikeda・Seiichi Miyazaki（Hiroshima Univ.）
pp. 77 - 80
SDM2008-74
Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories
○Doo-Hyun Kim・Il Han Park・Byung-Gook Park（Seoul National Univ.）
pp. 81 - 84
SDM2008-75
3-dimensional Terraced NAND(3D TNAND) Flash Memory
○Yoon Kim・Gil-Seong Lee・Jong Duk Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
pp. 85 - 88
SDM2008-76
Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure
○Sang-Su Park・Se Woong Oh・Kyeong Rok Kim・Hyun Joo Kim・Tae Whan Kim・Kae Dal Kwack（Hanyang Univ.）
pp. 89 - 93
SDM2008-77
Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL)
○Seongjae Cho・Il Han Park・Jung Hoon Lee・Gil Sung Lee・Jong Duk Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
pp. 95 - 99
SDM2008-78
Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor
○Tetsuo Endoh・Kousuke Tanaka・Yuto Norifusa（Tohoku Univ.）
pp. 101 - 105
SDM2008-79
Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism
○Yuto Norifusa・Tetsuo Endoh（Tohoku Univ.）
pp. 107 - 111
SDM2008-80
Current Transport Characteristics for Organic Nonvolatile Memories
○Woo-Sik Nam・Gon-Sub Lee・Sung-Ho Seo・Young-Hwan Oh・Jae-Gun Park（Hanyang Univ.）
pp. 113 - 117
SDM2008-81
Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
○Katsuhiko Nishiguchi・Charlie Koechlin・Yukinori Ono・Akira Fujiwara・Hiroshi Inokawa・Hiroshi Yamaguchi（NTT）
pp. 119 - 124
SDM2008-82
Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors
○Yoo Chul Kim・Keum-Dong Jung・Jong Duk Lee・Byung-Gook Park（Seoul National Univ.）
pp. 125 - 128
SDM2008-83
Self-Aligned Conducting Polymer Patterns Coated with Carbon Nanotube Using Soft Lithography for Transparent Flexible Electrode of OTFT
○Jin-Woo Huh・Jin-Woo Huh・Jin-Wook Jeong・Ho-Gyu Yoon（Korea Univ.）・Sang Ho Kim（LG Chem.）・Byeong-Kwon Ju（Korea Univ.）
pp. 129 - 133
SDM2008-84
Self-Assembled Carbon Nanotube Network Films Field Effect Transistor for Biosensor Application
○Sunhaera Shin・Youn-Kyoung Baek・Yang-Kyu Choi・Hee-Tae Jung（KAIST）
pp. 135 - 137
SDM2008-85
2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network
○Hong-Quan Zhao（Hokkaido Univ.）・Seiya Kasai（Hokkaido Univ./JST）・Tamotsu Hashizume（Hokkaido Univ.）
pp. 139 - 144
SDM2008-86
Fabrication of Silicon Nanowire Devices using AC Dielectrophoresis
○Su-Heon Hong・Myung-Gil Kang（Korea Univ.）・Dong-Mok Whang（Sungkyunkwan Univ.）・Sung-Woo Hwang（Korea Univ.）
pp. 145 - 148
SDM2008-87
A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications
○Hyeok Jun Son・Il Woong Kwon（KAIST）・Ho Jun You（ETRI）・Yong Soo Lee・Hee Chul Lee（KAIST）
pp. 149 - 154
SDM2008-88
Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces
○S. Mahboob・Katsunori Makihara・Hirotaka Kaku・Mitsuhisa Ikeda・Seiichiro Higashi・Seiichi Miyazaki・Akio Kuroda（Hiroshima Univ.）
pp. 155 - 158
SDM2008-89
An Insect Vision-based Single-electron Circuit Performing Motion Detection
○Andrew Kilinga Kikombo・Tetsuya Asai・Yoshihito Amemiya（Hokkaido univ.）
pp. 159 - 164
SDM2008-90
［招待講演］SiC Power Transistor and Its Application for DC/DC Converter
○Makoto Kitabatake（Matsushita Electric Industrial）
pp. 165 - 169
SDM2008-91
［招待講演］Recent Advances on GaN Vertical Power Device
○Tetsu Kachi（Toyota Central R&D Labs., Inc.）
pp. 171 - 175
SDM2008-92
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
○Daisuke Shibata・Hisayoshi Matsuo（Matsushita Electric Industrial）・Shuichi Nagai・Ming Li（Panasonic Boston Lab）・Naohiro Tsurumi・Hidetoshi Ishida・Manabu Yanagihara・Yasuhiro Uemoto・Tetsuzo Ueda・Tsuyoshi Tanaka・Daisuke Ueda（Matsushita Electric Industrial）
pp. 177 - 181
SDM2008-93
Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET
○Chien-Nan Liao（National Central Univ.）・Jhih-Chao Huang・Feng-Tso Chien（Feng Chia Univ.）・Chii-Wen Chen（Minghsin Univ. of Sci. and Tech.）・Yao-Tsung Tsai（National Central Univ.）
pp. 183 - 186
SDM2008-94
The Analysis of the Floating Field Limiting Ring and Field Plate
○Chien-Nan Liao（National Central Univ.）・Jhih-Chao Huang・Feng-Tso Chien・Ching-Hwa Cheng（Feng Chia Univ.）・Yao-Tsung Tsai（National Central Univ.）
pp. 187 - 191
SDM2008-95
A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology
○Jae-Young Park・Jong-Kyu Song・Chang-Soo Jang・Joon-Tae Jang・San-Hong Kim・Sung-Ki Kim・Taek-Soo Kim（Dongbu HiTek）
pp. 193 - 197
SDM2008-96
［招待講演］Millimeter-wave MMIC Technologies for F-band Application
○Toshihiko Kosugi・Akihiko Hirata・Koichi Murata・Naoya Kukutsu・Yuichi Kado・Takatomo Enoki（NTT）
pp. 199 - 204
SDM2008-97
［招待講演］Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Nano-Transistors
○Taiichi Otsuji（Tohoku Univ.）
pp. 205 - 210
SDM2008-98
Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter
○HyunChul Kang・Takuya Nishimura・Taiichi Otsuji（Tohoku Univ.）・Naoya Watanabe・Tanemasa Asano（Kyushu Univ.）
pp. 211 - 215
SDM2008-99
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
○Takuya Nishimura・Nobuhiro Magome・HyunChul Kang・Taiichi Otsuji（Tohoku Univ.）
pp. 217 - 220
SDM2008-100
Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications
○Sooyeon Kim・Yongho Oh・Jae-Sung Rieh（Korea Univ.）
pp. 221 - 226
SDM2008-101
Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop
○Tetsuo Endoh・Masashi Kamiyanagi（Tohoku Univ.）
pp. 227 - 231
SDM2008-102
Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations
○Masashi Kamiyanagi・Yuto Norifusa・Tetsuo Endoh（Tohoku Univ.）
pp. 233 - 238
SDM2008-103
Implementation of Channel Thermal Noise Model in CMOS RFIC Design
○Jongwook Jeon・Ickhyun Song・Hyungcheol Shin（Seoul National Univ.）
pp. 239 - 242
SDM2008-104
CMOS Digitally Controlled Programmable Gain Amplifier (PGA) with DC Offset Cancellation
○Kyunghoon Kim・Jinwook Burn（Sogang Univ.）
pp. 243 - 248
SDM2008-105
CMOS phase shift Oscillator Using the Conduction of Heat
○Takaaki Hirai・Tetsuya Asai・Yoshihito Amemiya（Hokkaido univ.）
pp. 249 - 252
SDM2008-106
Chip Design of a Successive Approximation A/D Converter for Structure Monitoring System
○Jae-Woon Kim・Jinwook Burm（Sogang Univ.）
pp. 253 - 257
SDM2008-107
Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Application
○Jun-Gyu Lee・Bae-Ki Jung・Jinwook Burm（Sogang Univ.）
pp. 259 - 264
SDM2008-108
The Data Analysis Technique of the Atomic Force Microscopy for the Atomically Flat Silicon Surface
○Masahiro Konda・Akinobu Teramoto・Tomoyuki Suwa・Rihito Kuroda・Tadahiro Ohmi（Tohoku Univ.）
pp. 265 - 269
SDM2008-109
Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4
○Hirotaka Kaku・Katsunori Makihara・Mitsuhisa Ikeda・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.）
pp. 271 - 274
SDM2008-110
Study on Gate Around Transistor (GAT) Layout for Radiation Hardness
○Min-su Lee・Young-Soo Lee・Chul-Bum Kim・Young-Ho Kim（KAIST）・Byoung-Gon Yu・Hee Chul Lee（ETRI）
pp. 275 - 280
SDM2008-111
Low Power Pixel-Level ADC for a Micro-Bolometer
○Dong-Heon Ha・Chi Ho Hwang（KAIST）・Woo Seok Yang（ETRI）・Yong Soo Lee・Hee Chul Lee（KAIST）
pp. 281 - 284
SDM2008-112
A 425 MHz Narrow Channel Spacing Frequency Synthesizer
○Younwoong Chung・Junan Lee・Jinwook Burm（Sogang Univ）
pp. 285 - 290
SDM2008-113
A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltge Mixed-Mode Systems
○Oh Jun Kwon・Kae DalKwack（Hanyang Univ.）
pp. 291 - 293
SDM2008-114
A Novel 900mV Single-Stage Class-AB Amplifier for a Σ-Δ Modulator with the Switched-OPamp Technique
○Oh Jun Kwon・Kae Dal Kwack（Hanyang Univ.）
pp. 295 - 299
SDM2008-115
24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization
○Ickhyun Song・Hakchul Jung・Hee-Sauk Jhon・Minsuk Koo・Hyungcheol Shin（Seoul National Univ.）
pp. 301 - 304
SDM2008-116
Reduced Branch-Line Coupler Using Eight Two-Step Stubs for W-Band Application of MMIC
○Tae-Jong Baek・Sang-Jin Lee・Min Han・Jin-Koo Rhee（Dongguk Univ.）
pp. 305 - 308
SDM2008-117
W-band Single Balanced Mixer using High Performance Dot Schottky Diode
○Sang-Jin Lee・Jung-Hun Oh・Tae-Jong Baek・Mun-Kyo Lee・Dong-Sic Ko・Du-Hyun Ko・Hyun-Chang Park・Jin-Koo Rhee（Dongguk Univ.）
pp. 309 - 312
SDM2008-118
SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application
○Jae-Kwon Kim・Kyunghwan Kim・Jinwook Burn（Sogang Univ.）
pp. 313 - 316
SDM2008-119
Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes
○M. R. Kim・S. D. Lee・J. S. Lee・N. S. Kwak・S. D. Kim・J. K. Rhee（Dongguk Univ.）・W. J. Kim（ADD）
pp. 317 - 320
SDM2008-120
Design Consideration of High Power LED Arrays for Backlight Unit Applications
○Bong-Ryeol Park・Ho-Young Cha（Hongik Univ.）
pp. 321 - 325
SDM2008-121
Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors
○Akinori Mizohata・Naoki Yoshizawa・Taketomo Sato・Tamotsu Hashizume（Hokkaido Univ.）
pp. 327 - 330
SDM2008-122
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire
○Tomohiro Murata・Masayuki Kuroda（Matsushita Electric Industrial）・Shuichi Nagai（Panasonic Boston Lab.）・Masaaki Nishijima・Hidetoshi Ishida・Manabu Yanagihara・Tetsuzo Ueda・Hiroyuki Sakai・Tsuyoshi Tanaka（Matsushita Electric Industrial）・Ming Li（Panasonic Boston Lab.）
pp. 331 - 335
SDM2008-123
Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
○Hironari Chikaoka・Youichi Takakuwa・Kenji Shiojima・Masaaki Kuzuhara（Univ. of Fukui）
pp. 337 - 340
SDM2008-124
AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD
○Hideyuki Okita・Shinichi Hoshi・Toshiharu Marui・Masanori Itoh・Fumihiko Toda・Yoshiaki Morino・Isao Tamai・Yoshiaki Sano・Shohei Seki（OKI Electric Industry）
pp. 341 - 345
SDM2008-125
Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion
○Takeshi Kimura・Tamotsu Hashizume（Hokkaido Univ.）
pp. 347 - 350
SDM2008-126
Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching
○Takayuki Sawada・Yuta Kaizuka・Kensuke Takahashi・Kazuaki Imai（Hokkaido Inst. of Tech.）
pp. 351 - 355
SDM2008-127
Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition
○Masashi Kato・Hidenori Ono・Kazuya Ogawa・Masaya Ichimura（Nagoya Inst. of Tech.）
pp. 357 - 361
今後、次の点を修正する予定です。(1)欠けている表紙画像・奥付画像を補完いたします。(2)欠けている発行日の情報を補完いたします。
注： 本技術報告は査読を経ていない技術報告であり，推敲を加えられていずれかの場に発表されることがあります．