Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2009-45
［招待講演］CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
○Toshihide Suzuki・Yoichi Kawano（Fujitsu/Fujitsu Labs.）・Masaru Sato（Fujitsu Labs.）・Yasuhiro Nakasha・Tatsuya Hirose（Fujitsu/Fujitsu Labs.）・Naoki Hara（Fujitsu Labs.）・Kazukiyo Joshin（Fujitsu/Fujitsu Labs.）
pp. 1 - 4
SDM2009-46
［招待講演］Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
○Shoji Ikeda（Tohoku Univ.）・Jun Hayakawa（Hitachi, Ltd.）・Huadong Gan・Kotaro Mizumuma・Ji Ho Park（Tohoku Univ.）・Hiroyuki Yamamoto・Katsuya Miura（Hitachi, Ltd./Tohoku Univ.）・Haruhiro Hasegawa・Ryutaro Sasaki・Toshiyasu Meguro（Tohoku Univ.）・Kenchi Ito（Hitachi, Ltd.）・Fumihiro Matsukura・Hideo Ohno（Tohoku Univ.）
pp. 5 - 8
SDM2009-47
Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
○Masashi Kamiyanagi・Fumitaka Iga・Shoji Ikeda（Tohoku Univ.）・Katsuya Miura（Tohoku Univ./Hitachi）・Jun Hayakawa（Hitachi）・Haruhiro Hasegawa・Takahiro Hanyu・Hideo Ohno・Tetsuo Endoh（Tohoku Univ.）
pp. 9 - 12
SDM2009-48
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
○Fumitaka Iga・Masashi Kamiyanagi・Shoji Ikeda（Tohoku Univ.）・Katsuya Miura（Tohoku Univ./Hitachi）・Jun Hayakawa（Hitachi）・Haruhiro Hasegawa・Takahiro Hanyu・Hideo Ohno・Tetsuo Endoh（Tohoku Univ.）
pp. 13 - 16
SDM2009-49
Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System.
○Jae-Young Park・Jong-Kyu Song・Dae-Woo Kim・Chang-Soo Jang・Won-Young Jung・Taek-Soo Kim（Dongbu HiTek）
pp. 17 - 20
SDM2009-50
Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation
○Tetsuo Endoh・Hyoungjun Na（Tohoku Univ.）
pp. 21 - 24
SDM2009-51
A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-um Si RFCMOS Technology
○Seung-Woo Seo・Jae-Sung Rieh（Korea Univ.）
pp. 25 - 28
SDM2009-52
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
○Kenichi Abe・Takafumi Fujisawa・Akinobu Teramoto・Syunichi Watabe・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.）
pp. 29 - 32
SDM2009-53
A 0.18um CMOS over 10 Gb/s 10-PAM Serial Link Receiver
○Jeongjun Lee・Jikyung Jeong・Jinwook Burm（Sogang University）
pp. 33 - 36
SDM2009-54
A CMOS 12.8 Gb/s 10-PAM transmitter for chip-to-chip communication
○Jikyung Jeong・Jeongjun Lee・Jinwook Burm（Sogang University）
pp. 37 - 40
SDM2009-55
Fundamental study of a composite right/left-handed transmission line with self-multiplexed properties toward functional wireless interconnects
○Sadaharu Ito・Michihiko Suhara（Tokyo Metro Univ.）
pp. 41 - 46
SDM2009-56
［招待講演］Metrology of microscopic properties of graphene on SiC
○Masao Nagase・Hiroki Hibino・Hiroyuki Kageshima・Hiroshi Yamaguchi（NTT BRL）
pp. 47 - 52
SDM2009-57
［招待講演］Theoretical study on graphene field-effect transistors
○Eiichi Sano（Hokkaido Univ./JST）・Taiichi Otsuji（Tohoku Univ../JST）
pp. 53 - 58
SDM2009-58
Electrical characteristics of OFETs with thin gate dielectric
○Young-uk Song・Shun-ichiro Ohmi・Hiroshi Ishiwara（Tokyo Inst. of Tech.）
pp. 59 - 62
SDM2009-59
Design of 30nm FinFET with Halo Structure
○Tetsuo Endoh・Koji Sakui・Yukio Yasuda（Tohoku Univ../JST-CREST）
pp. 63 - 66
SDM2009-60
Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier.
○Joung-eob Lee・Kwon-Chil Kang・Jung-Han Lee・Byung-Gook Park（Seoul National Univ.）
pp. 67 - 70
SDM2009-61
Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant Bump
○Lijing Qiu（Kyushu Univ.）・Naoya Watanabe（Fukuoka-IST）・Tanemasa Asano（Kyushu Univ.）
pp. 71 - 74
SDM2009-62
A new Combination of RSD and Inside Spacer Thin Film Transistor
○M. J. Chang・T. C. Li・F. T. Chien（Feng Chia Univ.）・C. N. Liao・Y. T. Tsai（National Central Univ.）
pp. 75 - 78
SDM2009-64
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor
○Jin Kwan Kim（KAIST）・Keedong Yang（i3system Conp.）・Yong Soo Lee（KAIST）・Hee Chul Lee（KAIST/National Nanofab Center）
pp. 83 - 86
SDM2009-65
［招待講演］Electron Devices Based on GaN and Related Nitride Semiconductors
○Masaaki Kuzuhara（Univ. of Fukui）
pp. 87 - 92
SDM2009-66
［招待講演］InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility
○Masanobu Hiroki・Narihiko Maeda・Takashi Kobayashi・Naoteru Shigekawa（NTT PH Labs.）
pp. 93 - 98
SDM2009-67
［招待講演］InGaAs/InP MISFET with epitaxially grown source
○Yasuyuki Miyamoto・Toru Kanazawa・Hisashi Saito・Kazuhito Furuya（Tokyo Inst. of Tech.）
pp. 99 - 103
SDM2009-68
4H-SiC Avalanche Photodiodes for 280 nm UV Detection.
○B. R. Park・H. Sung・Chun-Hyung Cho（Hongik Univ.）・P. M. Sandvik（GE）・Ho-Young Cha（Hongik Univ.）
pp. 105 - 108
SDM2009-69
Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition
○Kimihito Ooyama（Hokkaido Univ/Sumitomo Metal Mining）・Chihoko Mizue・Yujin Hori・Tamotsu Hashizume（Hokkaido Univ.）
pp. 109 - 112
SDM2009-70
InP Gunn diodes with shallow-barrier Schottky contacts.
○M. R. Kim・J. K. Rhee・S. D. Lee・Y. S. Chae・S. K. Sharma・A. Kathalingam・C. W. Lee・H. J. Lim（Dongguk Univ.）・J. H. Choi・W. J. Kim（Agency for Defense Development）
pp. 113 - 116
SDM2009-71
Formation and application of InP porous structures on p-n substrates
○Taketomo Sato・Naoki Yoshizawa・Hiroyuki Okazaki・Tamotsu Hashizume（Hokkaido Univ.）
pp. 117 - 120
SDM2009-72
A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer
○Y. J. Chen・T. C. Li・F. T. Chien（Feng Chia Univ.）・C. N. Liao・Y. T. Tsai（National Central Univ.）
pp. 121 - 124
SDM2009-73
Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
○Seiya Kasai（Hokkaido Univ./PRESTO JST）・Tetsuya Asai・Yuta Shiratori・Daisuke Nakata（Hokkaido Univ.）
pp. 125 - 128
SDM2009-74
Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
○Yasuyuki Miyamoto・Shinnosuke Takahashi・Takashi Kobayashi・Hiroyuki Suzuki・Kazuhito Furuya（Tokyo Inst. of Tech.）
pp. 129 - 132
SDM2009-75
Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
○Toshihiro Itoh・Kimikazu Sano・Hiroyuki Fukuyama・Koichi Murata（NTT）
pp. 133 - 136
SDM2009-76
Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces
○J. H. Ahn（Korea University）・J. H. Lee・T. W. Koo（Sungkyunkwan Univ/Korea University）・M. G. Kang（Korea University）・D. M. Whang（Sungkyunkwan Univ/Korea University）・S. W. Hwang（Korea University）
pp. 137 - 140
SDM2009-77
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN
○Ji-Ho Park・Hiroshi Okada・Akihiro Wakahara・Yuzo Furukawa（Toyohashi Univ. of Tech.）・Yong-Tae Kim（Dankook Univ.）・Jonghan Song（KIST）・Ho-Jung Chang（Dankook Univ.）・Shin-ichiro Sato・Takeshi Ohshima（JAEA, Takasaki）
pp. 141 - 144
SDM2009-78
［招待講演］Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
○Yasuo Takahashi・Takuya Kaizawa・Mingyu Jo・Masashi Arita（Hokkaido Univ.）・Akira Fujiwar・Yukinori Ono（NTT）・Hiroshi Inokawa（Shizuoka Univ.）・Jung-Bum Choi（Chungbuk National Univ.）
pp. 145 - 148
SDM2009-79
［招待講演］MOS Transistors fabricated on Si(551) surface based on radical reaction processes
○Akinobu Teramoto・Weitao Cheng・Chingfoa Tye・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.）
pp. 149 - 152
SDM2009-80
Effective Annealing for Si film
○Takashi Noguchi・Tomoyuki Miyahira・Yeh Chen・Jean de dieu Mugiraneza（Univ. of Ryukyus）
pp. 153 - 156
SDM2009-81
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
○Tomoyuki Suwa（Tohoku Univ.）・Takashi Aratani（Shin-Etsu Chemical）・Masaaki Higuchi（TOSHIBA）・Sigetoshi Sugawa（Tohoku Univ.）・Eiji Ikenaga（JASRI）・Jiro Ushio（Hitachi）・Hiroshi Nohira（Musashi Inst. of Tech.）・Akinobu Teramoto・Tadahiro Ohmi・Takeo Hattori（Tohoku Univ.）
pp. 157 - 160
SDM2009-82
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
○Hideki Murakami・Syed Mahboob・Kiyotaka Katayama・Katsunori Makihara・Mitsuhisa Ikeda・Yumehiro Hata・Akio Kuroda・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.）
pp. 161 - 164
SDM2009-83
Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages
○C. H. Cho・H. Y. Cha（Hongik Univ.）
pp. 165 - 168
SDM2009-84
Study on Quantum Electro-Dynamics in Vertical MOSFET
○Masakazu Muraguchi・Tetsuo Endoh（Tohoku Univ./JST-CREST）
pp. 169 - 172
SDM2009-85
Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
○Tetsuo Endoh・Koji Sakui・Yukio Yasuda（Tohoku Univ./JST-CREST）
pp. 173 - 176
SDM2009-86
［招待講演］Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor
○Taizoh Sadoh・Takanori Tanaka・Yasuharu Ohta・Kaoru Toko・Masanobu Miyao（Kyushu Univ.）
pp. 177 - 180
SDM2009-87
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
○Katsunori Makihara・Mitsuhisa Ikeda・Akira Kawanami・Seiichi Miyazaki（Hiroshima Univ.）
pp. 181 - 184
SDM2009-88
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
○Masakazu Muraguchi（Tohoku Univ.）・Yukihiro Takada・Shintaro Nomura（Univ. of Tsukuba.）・Tetsuo Endoh（Tohoku Univ.）・Kenji Shiraishi（Univ. of Tsukuba.）
pp. 185 - 188
SDM2009-89
Fabrication of double-dot single-electron transistor in silicon nanowire
○Mingyu Jo・Takuya Kaizawa・Masashi Arita（Hokkaido Univ.）・Akira Fujiwara・Yukinori Ono（NTT）・Hiroshi Inokawa（Shizuoka Univ.）・Jung-Bum Choi（Chungbuk National Univ.）・Yasuo Takahashi（Hokkaido Univ.）
pp. 189 - 192
SDM2009-90
［招待講演］Future High Density Memory with Vertical Structured Device Technology
○Tetsuo Endoh（Tohoku Univ.）
pp. 193 - 196
SDM2009-91
Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory.
○Yoon Kim・Seongjae Cho・Jang-Gn Yun・Il Han Park・Gil Sung Lee・Doo-Hyun Kim・Dong Hua Li・Se Hwan Park・Wandong Kim・Wonbo Shim・Byung-Gook Park（Seoul National Univ.）
pp. 197 - 200
SDM2009-92
Architecture and verification of the row chain cell array for polymer random access memory
○Jung ha Kim・Chang yong Ahn・Sang sun Lee（Hanyang Univ.）
pp. 201 - 204
SDM2009-93
Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al2O3 and SiO2 stacked tunneling layers.
○H. W. Kim・D. H. Kim・J. H. You・T. W. Kim（Hanyang Univ.）
pp. 205 - 208
SDM2009-94
Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time
○Woojun Lee・Woo Young Choi（Sogang Univ.）
pp. 209 - 212
SDM2009-95
Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions
○J. W. Lee・J. H. You・S. H. Jang・K. D. Kwack・T. W. Kim（Hanyang Univ.）
pp. 213 - 217
SDM2009-96
Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device.
○Seongjae Cho・Jung Hoon Lee・Yun Kim・Jang-Gn Yun・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
pp. 219 - 222
注： 本技術報告は査読を経ていない技術報告であり，推敲を加えられていずれかの場に発表されることがあります．