電子情報通信学会技術研究報告

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 109, Number 98

シリコン材料・デバイス

開催日 2009-06-24 - 2009-06-26 / 発行日 2009-06-17

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目次

SDM2009-45
[招待講演]CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
○Toshihide Suzuki・Yoichi Kawano(Fujitsu/Fujitsu Labs.)・Masaru Sato(Fujitsu Labs.)・Yasuhiro Nakasha・Tatsuya Hirose(Fujitsu/Fujitsu Labs.)・Naoki Hara(Fujitsu Labs.)・Kazukiyo Joshin(Fujitsu/Fujitsu Labs.)
pp. 1 - 4

SDM2009-46
[招待講演]Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
○Shoji Ikeda(Tohoku Univ.)・Jun Hayakawa(Hitachi, Ltd.)・Huadong Gan・Kotaro Mizumuma・Ji Ho Park(Tohoku Univ.)・Hiroyuki Yamamoto・Katsuya Miura(Hitachi, Ltd./Tohoku Univ.)・Haruhiro Hasegawa・Ryutaro Sasaki・Toshiyasu Meguro(Tohoku Univ.)・Kenchi Ito(Hitachi, Ltd.)・Fumihiro Matsukura・Hideo Ohno(Tohoku Univ.)
pp. 5 - 8

SDM2009-47
Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
○Masashi Kamiyanagi・Fumitaka Iga・Shoji Ikeda(Tohoku Univ.)・Katsuya Miura(Tohoku Univ./Hitachi)・Jun Hayakawa(Hitachi)・Haruhiro Hasegawa・Takahiro Hanyu・Hideo Ohno・Tetsuo Endoh(Tohoku Univ.)
pp. 9 - 12

SDM2009-48
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
○Fumitaka Iga・Masashi Kamiyanagi・Shoji Ikeda(Tohoku Univ.)・Katsuya Miura(Tohoku Univ./Hitachi)・Jun Hayakawa(Hitachi)・Haruhiro Hasegawa・Takahiro Hanyu・Hideo Ohno・Tetsuo Endoh(Tohoku Univ.)
pp. 13 - 16

SDM2009-49
Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System.
○Jae-Young Park・Jong-Kyu Song・Dae-Woo Kim・Chang-Soo Jang・Won-Young Jung・Taek-Soo Kim(Dongbu HiTek)
pp. 17 - 20

SDM2009-50
Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation
○Tetsuo Endoh・Hyoungjun Na(Tohoku Univ.)
pp. 21 - 24

SDM2009-51
A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-um Si RFCMOS Technology
○Seung-Woo Seo・Jae-Sung Rieh(Korea Univ.)
pp. 25 - 28

SDM2009-52
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
○Kenichi Abe・Takafumi Fujisawa・Akinobu Teramoto・Syunichi Watabe・Shigetoshi Sugawa・Tadahiro Ohmi(Tohoku Univ.)
pp. 29 - 32

SDM2009-53
A 0.18um CMOS over 10 Gb/s 10-PAM Serial Link Receiver
○Jeongjun Lee・Jikyung Jeong・Jinwook Burm(Sogang University)
pp. 33 - 36

SDM2009-54
A CMOS 12.8 Gb/s 10-PAM transmitter for chip-to-chip communication
○Jikyung Jeong・Jeongjun Lee・Jinwook Burm(Sogang University)
pp. 37 - 40

SDM2009-55
Fundamental study of a composite right/left-handed transmission line with self-multiplexed properties toward functional wireless interconnects
○Sadaharu Ito・Michihiko Suhara(Tokyo Metro Univ.)
pp. 41 - 46

SDM2009-56
[招待講演]Metrology of microscopic properties of graphene on SiC
○Masao Nagase・Hiroki Hibino・Hiroyuki Kageshima・Hiroshi Yamaguchi(NTT BRL)
pp. 47 - 52

SDM2009-57
[招待講演]Theoretical study on graphene field-effect transistors
○Eiichi Sano(Hokkaido Univ./JST)・Taiichi Otsuji(Tohoku Univ../JST)
pp. 53 - 58

SDM2009-58
Electrical characteristics of OFETs with thin gate dielectric
○Young-uk Song・Shun-ichiro Ohmi・Hiroshi Ishiwara(Tokyo Inst. of Tech.)
pp. 59 - 62

SDM2009-59
Design of 30nm FinFET with Halo Structure
○Tetsuo Endoh・Koji Sakui・Yukio Yasuda(Tohoku Univ../JST-CREST)
pp. 63 - 66

SDM2009-60
Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier.
○Joung-eob Lee・Kwon-Chil Kang・Jung-Han Lee・Byung-Gook Park(Seoul National Univ.)
pp. 67 - 70

SDM2009-61
Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant Bump
○Lijing Qiu(Kyushu Univ.)・Naoya Watanabe(Fukuoka-IST)・Tanemasa Asano(Kyushu Univ.)
pp. 71 - 74

SDM2009-62
A new Combination of RSD and Inside Spacer Thin Film Transistor
○M. J. Chang・T. C. Li・F. T. Chien(Feng Chia Univ.)・C. N. Liao・Y. T. Tsai(National Central Univ.)
pp. 75 - 78

SDM2009-64
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor
○Jin Kwan Kim(KAIST)・Keedong Yang(i3system Conp.)・Yong Soo Lee(KAIST)・Hee Chul Lee(KAIST/National Nanofab Center)
pp. 83 - 86

SDM2009-65
[招待講演]Electron Devices Based on GaN and Related Nitride Semiconductors
○Masaaki Kuzuhara(Univ. of Fukui)
pp. 87 - 92

SDM2009-66
[招待講演]InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility
○Masanobu Hiroki・Narihiko Maeda・Takashi Kobayashi・Naoteru Shigekawa(NTT PH Labs.)
pp. 93 - 98

SDM2009-67
[招待講演]InGaAs/InP MISFET with epitaxially grown source
○Yasuyuki Miyamoto・Toru Kanazawa・Hisashi Saito・Kazuhito Furuya(Tokyo Inst. of Tech.)
pp. 99 - 103

SDM2009-68
4H-SiC Avalanche Photodiodes for 280 nm UV Detection.
○B. R. Park・H. Sung・Chun-Hyung Cho(Hongik Univ.)・P. M. Sandvik(GE)・Ho-Young Cha(Hongik Univ.)
pp. 105 - 108

SDM2009-69
Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition
○Kimihito Ooyama(Hokkaido Univ/Sumitomo Metal Mining)・Chihoko Mizue・Yujin Hori・Tamotsu Hashizume(Hokkaido Univ.)
pp. 109 - 112

SDM2009-70
InP Gunn diodes with shallow-barrier Schottky contacts.
○M. R. Kim・J. K. Rhee・S. D. Lee・Y. S. Chae・S. K. Sharma・A. Kathalingam・C. W. Lee・H. J. Lim(Dongguk Univ.)・J. H. Choi・W. J. Kim(Agency for Defense Development)
pp. 113 - 116

SDM2009-71
Formation and application of InP porous structures on p-n substrates
○Taketomo Sato・Naoki Yoshizawa・Hiroyuki Okazaki・Tamotsu Hashizume(Hokkaido Univ.)
pp. 117 - 120

SDM2009-72
A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer
○Y. J. Chen・T. C. Li・F. T. Chien(Feng Chia Univ.)・C. N. Liao・Y. T. Tsai(National Central Univ.)
pp. 121 - 124

SDM2009-73
Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
○Seiya Kasai(Hokkaido Univ./PRESTO JST)・Tetsuya Asai・Yuta Shiratori・Daisuke Nakata(Hokkaido Univ.)
pp. 125 - 128

SDM2009-74
Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
○Yasuyuki Miyamoto・Shinnosuke Takahashi・Takashi Kobayashi・Hiroyuki Suzuki・Kazuhito Furuya(Tokyo Inst. of Tech.)
pp. 129 - 132

SDM2009-75
Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
○Toshihiro Itoh・Kimikazu Sano・Hiroyuki Fukuyama・Koichi Murata(NTT)
pp. 133 - 136

SDM2009-76
Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces
○J. H. Ahn(Korea University)・J. H. Lee・T. W. Koo(Sungkyunkwan Univ/Korea University)・M. G. Kang(Korea University)・D. M. Whang(Sungkyunkwan Univ/Korea University)・S. W. Hwang(Korea University)
pp. 137 - 140

SDM2009-77
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN
○Ji-Ho Park・Hiroshi Okada・Akihiro Wakahara・Yuzo Furukawa(Toyohashi Univ. of Tech.)・Yong-Tae Kim(Dankook Univ.)・Jonghan Song(KIST)・Ho-Jung Chang(Dankook Univ.)・Shin-ichiro Sato・Takeshi Ohshima(JAEA, Takasaki)
pp. 141 - 144

SDM2009-78
[招待講演]Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
○Yasuo Takahashi・Takuya Kaizawa・Mingyu Jo・Masashi Arita(Hokkaido Univ.)・Akira Fujiwar・Yukinori Ono(NTT)・Hiroshi Inokawa(Shizuoka Univ.)・Jung-Bum Choi(Chungbuk National Univ.)
pp. 145 - 148

SDM2009-79
[招待講演]MOS Transistors fabricated on Si(551) surface based on radical reaction processes
○Akinobu Teramoto・Weitao Cheng・Chingfoa Tye・Shigetoshi Sugawa・Tadahiro Ohmi(Tohoku Univ.)
pp. 149 - 152

SDM2009-80
Effective Annealing for Si film
○Takashi Noguchi・Tomoyuki Miyahira・Yeh Chen・Jean de dieu Mugiraneza(Univ. of Ryukyus)
pp. 153 - 156

SDM2009-81
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
○Tomoyuki Suwa(Tohoku Univ.)・Takashi Aratani(Shin-Etsu Chemical)・Masaaki Higuchi(TOSHIBA)・Sigetoshi Sugawa(Tohoku Univ.)・Eiji Ikenaga(JASRI)・Jiro Ushio(Hitachi)・Hiroshi Nohira(Musashi Inst. of Tech.)・Akinobu Teramoto・Tadahiro Ohmi・Takeo Hattori(Tohoku Univ.)
pp. 157 - 160

SDM2009-82
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
○Hideki Murakami・Syed Mahboob・Kiyotaka Katayama・Katsunori Makihara・Mitsuhisa Ikeda・Yumehiro Hata・Akio Kuroda・Seiichiro Higashi・Seiichi Miyazaki(Hiroshima Univ.)
pp. 161 - 164

SDM2009-83
Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages
○C. H. Cho・H. Y. Cha(Hongik Univ.)
pp. 165 - 168

SDM2009-84
Study on Quantum Electro-Dynamics in Vertical MOSFET
○Masakazu Muraguchi・Tetsuo Endoh(Tohoku Univ./JST-CREST)
pp. 169 - 172

SDM2009-85
Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
○Tetsuo Endoh・Koji Sakui・Yukio Yasuda(Tohoku Univ./JST-CREST)
pp. 173 - 176

SDM2009-86
[招待講演]Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor
○Taizoh Sadoh・Takanori Tanaka・Yasuharu Ohta・Kaoru Toko・Masanobu Miyao(Kyushu Univ.)
pp. 177 - 180

SDM2009-87
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
○Katsunori Makihara・Mitsuhisa Ikeda・Akira Kawanami・Seiichi Miyazaki(Hiroshima Univ.)
pp. 181 - 184

SDM2009-88
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
○Masakazu Muraguchi(Tohoku Univ.)・Yukihiro Takada・Shintaro Nomura(Univ. of Tsukuba.)・Tetsuo Endoh(Tohoku Univ.)・Kenji Shiraishi(Univ. of Tsukuba.)
pp. 185 - 188

SDM2009-89
Fabrication of double-dot single-electron transistor in silicon nanowire
○Mingyu Jo・Takuya Kaizawa・Masashi Arita(Hokkaido Univ.)・Akira Fujiwara・Yukinori Ono(NTT)・Hiroshi Inokawa(Shizuoka Univ.)・Jung-Bum Choi(Chungbuk National Univ.)・Yasuo Takahashi(Hokkaido Univ.)
pp. 189 - 192

SDM2009-90
[招待講演]Future High Density Memory with Vertical Structured Device Technology
○Tetsuo Endoh(Tohoku Univ.)
pp. 193 - 196

SDM2009-91
Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory.
○Yoon Kim・Seongjae Cho・Jang-Gn Yun・Il Han Park・Gil Sung Lee・Doo-Hyun Kim・Dong Hua Li・Se Hwan Park・Wandong Kim・Wonbo Shim・Byung-Gook Park(Seoul National Univ.)
pp. 197 - 200

SDM2009-92
Architecture and verification of the row chain cell array for polymer random access memory
○Jung ha Kim・Chang yong Ahn・Sang sun Lee(Hanyang Univ.)
pp. 201 - 204

SDM2009-93
Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al2O3 and SiO2 stacked tunneling layers.
○H. W. Kim・D. H. Kim・J. H. You・T. W. Kim(Hanyang Univ.)
pp. 205 - 208

SDM2009-94
Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time
○Woojun Lee・Woo Young Choi(Sogang Univ.)
pp. 209 - 212

SDM2009-95
Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions
○J. W. Lee・J. H. You・S. H. Jang・K. D. Kwack・T. W. Kim(Hanyang Univ.)
pp. 213 - 217

SDM2009-96
Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device.
○Seongjae Cho・Jung Hoon Lee・Yun Kim・Jang-Gn Yun・Hyungcheol Shin・Byung-Gook Park(Seoul National Univ.)
pp. 219 - 222

注: 本技術報告は査読を経ていない技術報告であり,推敲を加えられていずれかの場に発表されることがあります.


IEICE / 電子情報通信学会