7月9日(水) 午前  プレナリセッション 10:00 - 10:40
(1)	10:00-10:40	［基調講演］III-V Semiconductor Epitaxial Nanowires and Their Applications ED2008-39 SDM2008-58	○Takashi Fukui・Shinjiro Hara・Kenji Hiruma・Junichi Motohisa（Hokkaido Univ.）
	10:40-10:50	休憩　（ 10分 ）
7月9日(水) 午前  セッション 1: Compound Semiconductor Devices 10:50 - 12:20
(1)	10:50-11:15	［招待講演］Growth of InAs quantum dot and device application	○Il-Ki Han（KIST）
(2)	11:15-11:40	［招待講演］Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration ED2008-40 SDM2008-59	○Toshi-kazu Suzuki（JAIST）
(3)	11:40-12:05	［招待講演］AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer ED2008-41 SDM2008-60	○Tadayoshi Deguchi（New Japan Radio）・Takashi Egawa（Nagoya Inst. of Tech.）
(4)	12:05-12:20	Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition ED2008-42 SDM2008-61	○Hyeong-Seon Yun・Ka-Lam Kim・No-Won Kwak・Woo-Seok Lee・Sang-Hyun Jeong（Cheongju Univ.）・Ju-Ok Seo（Itswell）・Kwang-Ho Kim（Cheongju Univ.）
	12:20-13:20	昼食　（ 60分 ）
7月9日(水) 午後  セッション 2: Silicon Devices I 13:20 - 15:45
(1)	13:20-13:45	［招待講演］Guidelines for the Threshold Voltage Control of Metal/HfSiON system ED2008-43 SDM2008-62	○Akira Nishiyama・Yoshinori Tsuchiya・Masahiko Yoshiki・Atsuhiro Kinoshita・Junji Koga・Masato Koyama（Toshiba）
(2)	13:45-14:10	［招待講演］Precise Ion Implantation for Advanced MOS LSIs ED2008-44 SDM2008-63	○Toshiharu Suzuki（SEN）
(3)	14:10-14:35	［招待講演］Quantum Modeling of Carrier Transport through Silicon Nano-devices ED2008-45 SDM2008-64	○Nobuya Mori・Hideki Minari（Osaka Univ.）
(4)	14:35-15:00	［招待講演］High-K Dielectric for Charge Trap-type Flash Memory Application ED2008-46 SDM2008-65	○Byung-Jin Cho（KAIST）・Wei He・Jing Pu（National Univ. of Singapore）
(5)	15:00-15:15	Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors ED2008-47 SDM2008-66	○Han-A Jung・Ki-Heung Park（Kyungpook National Univ.）・Hyuck-In Kwon（Daegu Univ. Jillyang）・Jong-Ho Lee（Kyungpook National Univ.）
(6)	15:15-15:30	A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation ED2008-48 SDM2008-67	○Hiroshi Imai（Tohoku Univ.）・Masahiko Sugimura・Masafumi Kawasaki（Zeon）・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.）
(7)	15:30-15:45	CMOS phase shift Oscillator Using the Conduction of Heat ED2008-86 SDM2008-105	○Takaaki Hirai・Tetsuya Asai・Yoshihito Amemiya（Hokkaido univ.）
	15:45-15:55	休憩　（ 10分 ）
7月9日(水) 午後  セッション 3: Emerging Devices I 15:55 - 17:50
(1)	15:55-16:20	［招待講演］Characterization of Carbon Nanotube FETs by Electric Force Microscopy ED2008-49 SDM2008-68	○Takashi Mizutani（Nagoya Univ.）
(2)	16:20-16:45	［招待講演］Recent Progress on Nanoprobe and Nanoneedle ED2008-50 SDM2008-69	○Masaki Tanemura・Masashi Kitazawa・Yoshitaka Sugita・Ako Miyawaki・Masaki Kutsuna・Yasuhiko Hayashi（Nagoya Inst. of Tech.）・Shu Ping Lau（Nanyang Tech. Univ.）
(3)	16:45-17:10	［招待講演］Technical Issues and Applications of Printed Thin-Film Devices ED2008-51 SDM2008-70	○Yongtaek Hong・Jaewook Jeong・Jinwoo Kim・Sanbwoo Kim・Minkyoo Kwon・Seungjun Chung（Seoul National Univ.）
(4)	17:10-17:35	［招待講演］A Ta2O5 Solid-electrolyte Switch with Improved Reliability ED2008-52 SDM2008-71	○Naoki Banno・Toshitsugu Sakamoto・Noriyuki Iguchi・Shinji Fujieda（NEC Corp.）・Kazuya Terabe・Tsuyoshi Hasegawa・Masakazu Aono（NIMS）
(5)	17:35-17:50	Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation ED2008-53 SDM2008-72	○Sang Hyuk Park・Sangwoo Kang・Dong-Seup Lee・Jung Han Lee・Hong-Seon Yang・Kwon-Chil Kang・Joung-Eob Lee・Jong Duk Lee・Byung-Gook Park（Seoul National Univ.）
7月10日(木) 午前  セッション 4A: Nonvolatile Memory 09:00 - 10:30
(1)	09:00-09:15	Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories ED2008-54 SDM2008-73	○Kazuhiro Shimanoe・Katsunori Makihara・Mitsuhisa Ikeda・Seiichi Miyazaki（Hiroshima Univ.）
(2)	09:15-09:30	Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories ED2008-55 SDM2008-74	○Doo-Hyun Kim・Il Han Park・Byung-Gook Park（Seoul National Univ.）
(3)	09:30-09:45	3-dimensional Terraced NAND(3D TNAND) Flash Memory ED2008-56 SDM2008-75	○Yoon Kim・Gil-Seong Lee・Jong Duk Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
(4)	09:45-10:00	Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure ED2008-57 SDM2008-76	○Sang-Su Park・Se Woong Oh・Kyeong Rok Kim・Hyun Joo Kim・Tae Whan Kim・Kae Dal Kwack（Hanyang Univ.）
(5)	10:00-10:15	Using shielding metal for elimination of floating gate coupling effect	○Gil-Sung Lee（Seoul National Univ.）
(6)	10:15-10:30	Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL) ED2008-58 SDM2008-77	○Seongjae Cho・Il Han Park・Jung Hoon Lee・Gil Sung Lee・Jong Duk Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.）
	10:30-10:40	休憩　（ 10分 ）
7月10日(木) 午前  セッション 5A: Silicon Devices II 10:40 - 11:55
(1)	10:40-10:55	Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor ED2008-59 SDM2008-78	○Tetsuo Endoh・Kousuke Tanaka・Yuto Norifusa（Tohoku Univ.）
(2)	10:55-11:10	Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism ED2008-60 SDM2008-79	○Yuto Norifusa・Tetsuo Endoh（Tohoku Univ.）
(3)	11:10-11:25	Current Transport Characteristics for Organic Nonvolatile Memories ED2008-61 SDM2008-80	○Woo-Sik Nam・Gon-Sub Lee・Sung-Ho Seo・Young-Hwan Oh・Jae-Gun Park（Hanyang Univ.）
(4)	11:25-11:40	Observation of hexagonal nuclei in the melt-quenched Ge2Sb2Te5 thin films	○Min-Soo Youm（KIST）
(5)	11:40-11:55	Microstructural and electrical characteristics of Ge1Te1 alloy	○Yong-Tae Kim（KIST）
7月10日(木) 午前  セッション 4B: Emerging Devices II 09:00 - 10:15
(1)	09:00-09:15	Single-Electron-Resolution Electrometer Based on Field-Effect Transistor ED2008-62 SDM2008-81	○Katsuhiko Nishiguchi・Charlie Koechlin・Yukinori Ono・Akira Fujiwara・Hiroshi Inokawa・Hiroshi Yamaguchi（NTT）
(2)	09:15-09:30	Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors ED2008-63 SDM2008-82	○Yoo Chul Kim・Keum-Dong Jung・Jong Duk Lee・Byung-Gook Park（Seoul National Univ.）
(3)	09:30-09:45	Self-Aligned Conducting Polymer Patterns Coated with Carbon Nanotube Using Soft Lithography for Transparent Flexible Electrode of OTFT ED2008-64 SDM2008-83	○Jin-Woo Huh・Jin-Woo Huh・Jin-Wook Jeong・Ho-Gyu Yoon（Korea Univ.）・Sang Ho Kim（LG Chem.）・Byeong-Kwon Ju（Korea Univ.）
(4)	09:45-10:00	Self-Assembled Carbon Nanotube Network Films Field Effect Transistor for Biosensor Application ED2008-65 SDM2008-84	○Sunhaera Shin・Youn-Kyoung Baek・Yang-Kyu Choi・Hee-Tae Jung（KAIST）
(5)	10:00-10:15	2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network ED2008-66 SDM2008-85	○Hong-Quan Zhao（Hokkaido Univ.）・Seiya Kasai（Hokkaido Univ./JST）・Tamotsu Hashizume（Hokkaido Univ.）
	10:15-10:25	休憩　（ 10分 ）
7月10日(木) 午前  セッション 5B: Emerging Devices III 10:25 - 11:55
(1)	10:25-10:40	Fabrication of Silicon Nanowire Devices using AC Dielectrophoresis ED2008-67 SDM2008-86	○Su-Heon Hong・Myung-Gil Kang（Korea Univ.）・Dong-Mok Whang（Sungkyunkwan Univ.）・Sung-Woo Hwang（Korea Univ.）
(2)	10:40-10:55	A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications ED2008-68 SDM2008-87	○Hyeok Jun Son・Il Woong Kwon（KAIST）・Ho Jun You（ETRI）・Yong Soo Lee・Hee Chul Lee（KAIST）
(3)	10:55-11:10	Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces ED2008-69 SDM2008-88	○S. Mahboob・Katsunori Makihara・Hirotaka Kaku・Mitsuhisa Ikeda・Seiichiro Higashi・Seiichi Miyazaki・Akio Kuroda（Hiroshima Univ.）
(4)	11:10-11:25	Fabrication of methanol concentration sensor by using Pt dot catalyst electrode	○Seong-Il Kim（KIST）
(5)	11:25-11:40	Fabrication and characterization of silicon nanowire-based biosensor	○Young-Soo Sohn（KIST）
(6)	11:40-11:55	An Insect Vision-based Single-electron Circuit Performing Motion Detection ED2008-70 SDM2008-89	○Andrew Kilinga Kikombo・Tetsuya Asai・Yoshihito Amemiya（Hokkaido univ.）
7月11日(金) 午前  セッション 6: Power and High-Frequency Devices I 09:00 - 10:40
(1)	09:00-09:25	［招待講演］SiC Power Transistor and Its Application for DC/DC Converter ED2008-71 SDM2008-90	○Makoto Kitabatake（Matsushita Electric Industrial）
(2)	09:25-09:50	［招待講演］Recent Advances on GaN Vertical Power Device ED2008-72 SDM2008-91	○Tetsu Kachi（Toyota Central R&D Labs., Inc.）
(3)	09:50-10:15	［招待講演］Millimeter-wave MMIC Technologies for F-band Application ED2008-77 SDM2008-96	○Toshihiko Kosugi・Akihiko Hirata・Koichi Murata・Naoya Kukutsu・Yuichi Kado・Takatomo Enoki（NTT）
(4)	10:15-10:40	［招待講演］Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Nano-Transistors ED2008-78 SDM2008-97	○Taiichi Otsuji（Tohoku Univ.）
	10:40-10:50	休憩　（ 10分 ）
7月11日(金) 午前  セッション 7A: Power and High-Frequency Devices II 10:50 - 12:35
(1)	10:50-11:05	High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation ED2008-73 SDM2008-92	○Daisuke Shibata・Hisayoshi Matsuo（Matsushita Electric Industrial）・Shuichi Nagai・Ming Li（Panasonic Boston Lab）・Naohiro Tsurumi・Hidetoshi Ishida・Manabu Yanagihara・Yasuhiro Uemoto・Tetsuzo Ueda・Tsuyoshi Tanaka・Daisuke Ueda（Matsushita Electric Industrial）
(2)	11:05-11:20	Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET ED2008-74 SDM2008-93	○Chien-Nan Liao（National Central Univ.）・Jhih-Chao Huang・Feng-Tso Chien（Feng Chia Univ.）・Chii-Wen Chen（Minghsin Univ. of Sci. and Tech.）・Yao-Tsung Tsai（National Central Univ.）
(3)	11:20-11:35	The Analysis of the Floating Field Limiting Ring and Field Plate ED2008-75 SDM2008-94	○Chien-Nan Liao（National Central Univ.）・Jhih-Chao Huang・Feng-Tso Chien・Ching-Hwa Cheng（Feng Chia Univ.）・Yao-Tsung Tsai（National Central Univ.）
(4)	11:35-11:50	A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology ED2008-76 SDM2008-95	○Jae-Young Park・Jong-Kyu Song・Chang-Soo Jang・Joon-Tae Jang・San-Hong Kim・Sung-Ki Kim・Taek-Soo Kim（Dongbu HiTek）
(5)	11:50-12:05	Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter ED2008-79 SDM2008-98	○HyunChul Kang・Takuya Nishimura・Taiichi Otsuji（Tohoku Univ.）・Naoya Watanabe・Tanemasa Asano（Kyushu Univ.）
(6)	12:05-12:20	Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter ED2008-80 SDM2008-99	○Takuya Nishimura・Nobuhiro Magome・HyunChul Kang・Taiichi Otsuji（Tohoku Univ.）
(7)	12:20-12:35	Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications ED2008-81 SDM2008-100	○Sooyeon Kim・Yongho Oh・Jae-Sung Rieh（Korea Univ.）
	12:35-13:35	昼食　（ 60分 ）
7月11日(金) 午前  セッション 7B: Si Devices III 10:50 - 12:35
(1)	10:50-11:05	Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop ED2008-82 SDM2008-101	○Tetsuo Endoh・Masashi Kamiyanagi（Tohoku Univ.）
(2)	11:05-11:20	Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations ED2008-83 SDM2008-102	○Masashi Kamiyanagi・Yuto Norifusa・Tetsuo Endoh（Tohoku Univ.）
(3)	11:20-11:35	Implementation of Channel Thermal Noise Model in CMOS RFIC Design ED2008-84 SDM2008-103	○Jongwook Jeon・Ickhyun Song・Hyungcheol Shin（Seoul National Univ.）
(4)	11:35-11:50	CMOS Digitally Controlled Programmable Gain Amplifier (PGA) with DC Offset Cancellation ED2008-85 SDM2008-104	○Kyunghoon Kim・Jinwook Burn（Sogang Univ.）
(5)	11:50-12:05	Chip Design of a Successive Approximation A/D Converter for Structure Monitoring System ED2008-87 SDM2008-106	○Jae-Woon Kim・Jinwook Burm（Sogang Univ.）
(6)	12:05-12:20	Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Application ED2008-88 SDM2008-107	○Jun-Gyu Lee・Bae-Ki Jung・Jinwook Burm（Sogang Univ.）
(7)	12:20-12:35	The Data Analysis Technique of the Atomic Force Microscopy for the Atomically Flat Silicon Surface ED2008-89 SDM2008-108	○Masahiro Konda・Akinobu Teramoto・Tomoyuki Suwa・Rihito Kuroda・Tadahiro Ohmi（Tohoku Univ.）
	12:35-13:35	昼食　（ 60分 ）
7月11日(金) 午後  セッション 8A: Si Devices IV 13:35 - 15:05
(1)	13:35-13:50	Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 ED2008-90 SDM2008-109	○Hirotaka Kaku・Katsunori Makihara・Mitsuhisa Ikeda・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.）
(2)	13:50-14:05	Study on Gate Around Transistor (GAT) Layout for Radiation Hardness ED2008-91 SDM2008-110	○Min-su Lee・Young-Soo Lee・Chul-Bum Kim・Young-Ho Kim（KAIST）・Byoung-Gon Yu・Hee Chul Lee（ETRI）
(3)	14:05-14:20	Low Power Pixel-Level ADC for a Micro-Bolometer ED2008-92 SDM2008-111	○Dong-Heon Ha・Chi Ho Hwang（KAIST）・Woo Seok Yang（ETRI）・Yong Soo Lee・Hee Chul Lee（KAIST）
(4)	14:20-14:35	A 425 MHz Narrow Channel Spacing Frequency Synthesizer ED2008-93 SDM2008-112	○Younwoong Chung・Junan Lee・Jinwook Burm（Sogang Univ）
(5)	14:35-14:50	A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltge Mixed-Mode Systems ED2008-94 SDM2008-113	○Oh Jun Kwon・Kae DalKwack（Hanyang Univ.）
(6)	14:50-15:05	A Novel 900mV Single-Stage Class-AB Amplifier for a Σ-Δ Modulator with the Switched-OPamp Technique ED2008-95 SDM2008-114	○Oh Jun Kwon・Kae Dal Kwack（Hanyang Univ.）
7月11日(金) 午後  セッション 9A: High-Frequency, Photonic and Sensing Devices 15:05 - 16:05
(1)	15:05-15:20	24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization ED2008-96 SDM2008-115	○Ickhyun Song・Hakchul Jung・Hee-Sauk Jhon・Minsuk Koo・Hyungcheol Shin（Seoul National Univ.）
(2)	15:20-15:35	Reduced Branch-Line Coupler Using Eight Two-Step Stubs for W-Band Application of MMIC ED2008-97 SDM2008-116	○Tae-Jong Baek・Sang-Jin Lee・Min Han・Jin-Koo Rhee（Dongguk Univ.）
(3)	15:35-15:50	Design Consideration of High Power LED Arrays for Backlight Unit Applications ED2008-101 SDM2008-120	○Bong-Ryeol Park・Ho-Young Cha（Hongik Univ.）
(4)	15:50-16:05	Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors ED2008-102 SDM2008-121	○Akinori Mizohata・Naoki Yoshizawa・Taketomo Sato・Tamotsu Hashizume（Hokkaido Univ.）
7月11日(金) 午後  セッション 8B: Compound Semiconductor Device Process Technology 13:35 - 15:50
(1)	13:35-13:50	W-band Single Balanced Mixer using High Performance Dot Schottky Diode ED2008-98 SDM2008-117	○Sang-Jin Lee・Jung-Hun Oh・Tae-Jong Baek・Mun-Kyo Lee・Dong-Sic Ko・Du-Hyun Ko・Hyun-Chang Park・Jin-Koo Rhee（Dongguk Univ.）
(2)	13:50-14:05	SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application ED2008-99 SDM2008-118	○Jae-Kwon Kim・Kyunghwan Kim・Jinwook Burn（Sogang Univ.）
(3)	14:05-14:20	Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes ED2008-100 SDM2008-119	○M. R. Kim・S. D. Lee・J. S. Lee・N. S. Kwak・S. D. Kim・J. K. Rhee（Dongguk Univ.）・W. J. Kim（ADD）
(4)	14:20-14:35	AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire ED2008-103 SDM2008-122	○Tomohiro Murata・Masayuki Kuroda（Matsushita Electric Industrial）・Shuichi Nagai（Panasonic Boston Lab.）・Masaaki Nishijima・Hidetoshi Ishida・Manabu Yanagihara・Tetsuzo Ueda・Hiroyuki Sakai・Tsuyoshi Tanaka（Matsushita Electric Industrial）・Ming Li（Panasonic Boston Lab.）
(5)	14:35-14:50	Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures ED2008-104 SDM2008-123	○Hironari Chikaoka・Youichi Takakuwa・Kenji Shiojima・Masaaki Kuzuhara（Univ. of Fukui）
(6)	14:50-15:05	AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD ED2008-105 SDM2008-124	○Hideyuki Okita・Shinichi Hoshi・Toshiharu Marui・Masanori Itoh・Fumihiko Toda・Yoshiaki Morino・Isao Tamai・Yoshiaki Sano・Shohei Seki（OKI Electric Industry）
(7)	15:05-15:20	Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion ED2008-106 SDM2008-125	○Takeshi Kimura・Tamotsu Hashizume（Hokkaido Univ.）
(8)	15:20-15:35	Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching ED2008-107 SDM2008-126	○Takayuki Sawada・Yuta Kaizuka・Kensuke Takahashi・Kazuaki Imai（Hokkaido Inst. of Tech.）
(9)	15:35-15:50	Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition ED2008-108 SDM2008-127	○Masashi Kato・Hidenori Ono・Kazuya Ogawa・Masaya Ichimura（Nagoya Inst. of Tech.）

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Last modified: 2008-06-25 22:18:33